SSZT220 november   2020 LMG3522R030-Q1 , TMS320F280049C , TMS320F28388D

 

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    2.     The impact of switching frequency
    3.     Going beyond silicon
    4.     Design challenges with high frequency
    5.     GaN FET with integrated driver, protection, reporting and power management
Technical Article

Automotive GaN FETs Engineered for High Frequency and Robustness in HEV/EVs