SSZT220
november 2020
LMG3522R030-Q1
,
TMS320F280049C
,
TMS320F28388D
1
2
3
The impact of switching frequency
Going beyond silicon
Design challenges with high frequency
GaN FET with integrated driver, protection, reporting and power management
Technical Article
Automotive GaN FETs Engineered for High Frequency and Robustness in HEV/EVs