TIDUE53I march   2018  – july 2023 TMS320F28P550SJ , TMS320F28P559SJ-Q1

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Highlighted Products
      1. 2.2.1  UCC21710
      2. 2.2.2  UCC5320
      3. 2.2.3  TMS320F28379D
      4. 2.2.4  AMC1305M05
      5. 2.2.5  OPA4340
      6. 2.2.6  LM76003
      7. 2.2.7  PTH08080W
      8. 2.2.8  TLV1117
      9. 2.2.9  OPA350
      10. 2.2.10 UCC14240
    3. 2.3 System Design Theory
      1. 2.3.1 Three-Phase T-Type Inverter
        1. 2.3.1.1 Architecture Overview
        2. 2.3.1.2 LCL Filter Design
        3. 2.3.1.3 Inductor Design
        4. 2.3.1.4 SiC MOSFETs Selection
        5. 2.3.1.5 Loss Estimations
        6. 2.3.1.6 Thermal Considerations
      2. 2.3.2 Voltage Sensing
      3. 2.3.3 Current Sensing
      4. 2.3.4 System Power Supplies
        1. 2.3.4.1 Main Input Power Conditioning
        2. 2.3.4.2 Isolated Bias Supplies
      5. 2.3.5 Gate Drivers
        1. 2.3.5.1 1200-V SiC MOSFETs
        2. 2.3.5.2 650-V SiC MOSFETs
        3. 2.3.5.3 Gate Driver Bias Supply
      6. 2.3.6 Control Design
        1. 2.3.6.1 Current Loop Design
        2. 2.3.6.2 PFC DC Bus Voltage Regulation Loop Design
  9. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Required Hardware and Software
      1. 3.1.1 Hardware
        1. 3.1.1.1 Test Hardware Required
        2. 3.1.1.2 Microcontroller Resources Used on the Design (TMS320F28379D)
        3. 3.1.1.3 F28377D, F28379D Control-Card Settings
        4. 3.1.1.4 Microcontroller Resources Used on the Design (TMS320F280039C)
      2. 3.1.2 Software
        1. 3.1.2.1 Getting Started With Firmware
          1. 3.1.2.1.1 Opening the CCS project
          2. 3.1.2.1.2 Digital Power SDK Software Architecture
          3. 3.1.2.1.3 Interrupts and Lab Structure
          4. 3.1.2.1.4 Building, Loading and Debugging the Firmware
        2. 3.1.2.2 Protection Scheme
        3. 3.1.2.3 PWM Switching Scheme
        4. 3.1.2.4 ADC Loading
    2. 3.2 Testing and Results
      1. 3.2.1 Lab 1
      2. 3.2.2 Testing Inverter Operation
        1. 3.2.2.1 Lab 2
        2. 3.2.2.2 Lab 3
        3. 3.2.2.3 Lab 4
      3. 3.2.3 Testing PFC Operation
        1. 3.2.3.1 Lab 5
        2. 3.2.3.2 Lab 6
        3. 3.2.3.3 Lab 7
      4. 3.2.4 Test Setup for Efficiency
      5. 3.2.5 Test Results
        1. 3.2.5.1 PFC Mode - 230 VRMS, 400 V L-L
          1. 3.2.5.1.1 PFC Start-up – 230 VRMS, 400 L-L AC Voltage
          2. 3.2.5.1.2 Steady State Results at 230 VRMS, 400 V L-L - PFC Mode
          3. 3.2.5.1.3 Efficiency and THD Results at 220 VRMS, 50 Hz – PFC Mode
          4. 3.2.5.1.4 Transient Test With Step Load Change
        2. 3.2.5.2 PFC Mode - 120 VRMS, 208 V L-L
          1. 3.2.5.2.1 Steady State Results at 120 VRMS, 208 V-L-L - PFC Mode
          2. 3.2.5.2.2 Efficiency and THD Results at 120 VRMS - PFC Mode
        3. 3.2.5.3 Inverter Mode
          1. 3.2.5.3.1 Inverter Closed Loop Results
          2. 3.2.5.3.2 Efficiency and THD Results - Inverter Mode
          3. 3.2.5.3.3 Inverter - Transient Test
      6. 3.2.6 Open Loop Inverter Test Results
  10. 4Design Files
    1. 4.1 Schematics
    2. 4.2 Bill of Materials
    3. 4.3 PCB Layout Recommendations
      1. 4.3.1 Layout Prints
    4. 4.4 Altium Project
    5. 4.5 Gerber Files
    6. 4.6 Assembly Drawings
  11. 5Trademarks
  12. 6About the Authors
  13. 7Revision History

2.2.1 UCC21710

The UCC21710 device is a 5.7-kVRMS, reinforced isolated gate driver for Insulated-Gate Bipolar Transistors (IGBT) and SiC MOSFETs with split outputs, providing 10-A source and 10-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 13 V to maximum 33 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 130 ns provides accurate control of the output stage. UCC21710 integrates short circuit protection, detected via Overcurrent detection, with a fast response time needed to protect SiC MOSFETs.

  • 150-kV/μs minimum common-mode transient immunity (CMTI)
  • Split outputs to provide 10-A peak source and 10-A peak sink currents
  • Short propagation delay: 90 ns (typ), 130 ns (max)
  • 4-A active Miller clamp
  • Output short-circuit clamp
  • Soft turn off (STO) during short circuit
  • Fault alarm upon desaturation detection is signaled on FLT and reset through RST
  • Input and output undervoltage lockout (UVLO) with Ready (RDY) pin indication
  • Active output pulldown and default low outputs with low supply or floating inputs
  • 2.25-V to 5.5-V input supply voltage
  • 15-V to 30-V output driver supply voltage
  • CMOS compatible inputs
  • Rejects input pulses and noise transients shorter than 40 ns
  • Operating temperature: –40°C to +150°C ambient
  • Isolation surge withstand voltage of 12800-VPK
GUID-F422B79D-6348-4545-B15C-EF2E2CC8E06C-low.pngFigure 2-2 UCC21710 Functional Block Diagram