TIDUF82A August 2024 – November 2024 DRV8162 , INA241A , ISOM8710
The DRV816x devices are integrated half-bridge gate drivers capable of driving high-side and low-side N-channel power FETs. The device generates the gate drive voltages from the GVDD supply pin and uses a bootstrap circuit to drive the high-side FET. A trickle charge pump supports 100% duty cycle operation. The gate drive architecture supports peak gate drive currents up to 1A source and 2A sink. These devices can be used to drive various types of loads including brushless or brushed DC motors, PMSM, stepper motors, switched reluctance motors (SRM), and solenoids.
The 1-pin PWM, 2-pin PWM, and independent FET PWM modes allow for simple interfacing to controller circuits and flexible FET power stage configurations. The hardware pins help configure device settings including current sense amplifier gain, gate drive current, and VDS overcurrent protection. The DRV8161 device integrates a low-side current sense amplifier to provide current measurement information back to the controller. The DRV8162L variant offers separate GVDD and GVDD_LS pins to help system design of safe torque off (STO) function.
Internal protection functions are provided for under-voltage lockout, FET over-current, and over-temperature. The nFAULT pin indicates fault events detected by the protection features.