LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features

• TI GaN process qualified through accelerated reliability in-application hard-switching profiles
• Enables high-density power conversion designs
  • Superior system performance over cascode or stand-alone GaN FETs
  • Low inductance 8 mm × 8 mm QFN package for ease of design and layout
  • Adjustable drive strength for switching performance and EMI control
  • Digital fault status output signal
  • Only +12 V of unregulated supply needed
• Integrated gate driver
  • Zero common source inductance
  • 20-ns propagation delay for high-frequency design
  • Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
  • 25-V/ns to 100-V/ns adjustable slew rate
• Robust protection
  • Requires no external protection components
  • Overcurrent protection with <100 ns response
  • Greater than 150-V/ns slew rate immunity
  • Transient overvoltage immunity
  • Overtemperature protection
  • Undervoltage lockout (UVLO) protection on all supply rails
• Device Options:
  • LMG3410R150: Latched overcurrent protection
  • LMG3411R150: Cycle-by-cycle overcurrent proection