DATA SHEET
SN54AC00-SP Radiation Hardened Quad 2 Input NAND Gate
1 Features
- 5962R87549:
- Radiation hardness assurance (RHA) up to TID 100 krad (Si)
- SEL immune to 86 MeV×cm2/mg
- 5962-87549:
- Total ionizing dose 50 krad (Si)
- 2 V to 6 V VCC operation
- Inputs accept voltages to 6 V
- Maximum tpd of 7 ns at 5 V
2 Applications
- Satellite payloads
- Satellite power on reset logic
- RHA known good Die (KGD) offering for space hybrids
Pin Functions (Each
Gate)
| INPUTS | OUTPUT Y |
|
|---|---|---|
| A | B | |
| H | H | L |
| L | X | H |
| X | L | H |
Logic Diagram
(Positive Logic)3 Description
The SN54AC00 device contains four independent 2-input NAND gates. Each gate performs the Boolean function of Y = A • B or Y = A + B in positive logic.
Device Information(1)
| PART NUMBER | PACKAGE | BODY SIZE (NOM) |
|---|---|---|
| SN54AC00-SP | CDIP (14) | 5.97 mm × 9.21 mm |
| CFP (14) | 6.67 mm × 19.56 mm | |
| KGD (0) | Not applicable |
(1) For all available packages, see the orderable addendum at the
end of the data sheet.
J or W Package(Top View)
4 Revision History
Changes from Revision B (October 2015) to Revision C (April 2022)
- Updated the numbering format for tables, figures, and cross-references throughout the documentGo
- Removed SEU from the Features sectionGo
- Changed SEL immune to 86 MeV×cm2/mgGo
Changes from Revision A (December 2013) to Revision B (February 2015)
- Added KGD package information Go
- Added Device and Documentation Support section and Mechanical, Packaging, and Orderable Information section Go
- Added Bare Die Information, image, and Bond Pad Coordinates in Microns Go
- Added parameter information for KGD to Section 6.5 and Section 6.6 Go
