Loading [MathJax]/jax/output/SVG/fonts/TeX/fontdata.js
Data Sheet
UCC21750-Q1 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver
for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI
1 Features
- 5.7-kVRMS single
channel isolated gate driver
- AEC-Q100
qualified for automotive applications
- Device temperature grade
1: -40°C to +125°C ambient operating temperature range
- Device HBM ESD
classification level 3A
- Device CDM ESD
classification level
C3
- SiC MOSFETs and IGBTs up to
2121Vpk
- 33-V maximum output drive voltage
(VDD – VEE)
- ±10-A drive strength and split output
- 150-V/ns minimum CMTI
- 200-ns response time fast DESAT
protection
- 4-A Internal active miller clamp
- 400-mA soft turn-off when fault happens
- Isolated analog sensor with PWM
output for
- Temperature sensing with
NTC, PTC or thermal diode
- High voltage DC-link or
phase voltage
- Alarm FLT on
overcurrent and reset from RST/EN
- Fast enable and disable response
on RST/EN
- Reject < 40-ns noise transient
and pulse on input pins
- 12-V VDD UVLO with power good on
RDY
- Inputs/outputs with
over/under-shoot transient voltage immunity up to 5 V
- 130-ns (maximum) propagation
delay and 30-ns (maximum) pulse/part skew
- SOIC-16 DW package with creepage and clearance distance > 8
mm
- Operating junction temperature
–40°C to 150°C
- Safety-related certifications:
- Reinforced insulation per
DIN EN IEC 60747-17 (VDE 0884-17)
- UL 1577 component
recognition program
