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UCC21750-Q1

ACTIVE

Automotive 5.7kVrms, ±10A single-channel isolated gate driver w/ DESAT & internal clamp for IGBT/SiC

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Data sheet

UCC21750-Q1

ACTIVE
Data sheet Order now

Product details

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000, 8400 TI functional safety category Functional Safety Quality-Managed Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000, 8400 TI functional safety category Functional Safety Quality-Managed Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 5.7-kV RMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classification level C3
  • SiC MOSFETs and IGBTs up to 2121V pk
  • 33-V maximum output drive voltage (VDD – VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 200-ns response time fast DESAT protection
  • 4-A Internal active miller clamp
  • 400-mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-link or phase voltage
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable and disable response on RST/EN
  • Reject < 40-ns noise transient and pulse on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • Reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17)
    • UL 1577 component recognition program
  • 5.7-kV RMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classification level C3
  • SiC MOSFETs and IGBTs up to 2121V pk
  • 33-V maximum output drive voltage (VDD – VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 200-ns response time fast DESAT protection
  • 4-A Internal active miller clamp
  • 400-mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-link or phase voltage
  • Alarm FLT on overcurrent and reset from RST/EN
  • Fast enable and disable response on RST/EN
  • Reject < 40-ns noise transient and pulse on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • Reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17)
    • UL 1577 component recognition program

The UCC21750-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21750-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage, 12.8-kV PK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and > 150-V/ns common mode noise immunity (CMTI).

The UCC21750-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.

The UCC21750-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21750-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage, 12.8-kV PK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and > 150-V/ns common mode noise immunity (CMTI).

The UCC21750-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.
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Technical documentation

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Type Title Date
* Data sheet UCC21750-Q110-A Source/Sink Reinforced Isolated Single Channel Gate Driverfor SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI datasheet (Rev. D) PDF | HTML 06 Nov 2023
Application brief Does My Design Need a Miller Clamp? PDF | HTML 11 Dec 2024
Application note Choosing Appropriate Protection Approach for IGBT and SiC Power Modules PDF | HTML 19 Jul 2024
White paper 신뢰할 수 있는 합리적 가격대의 절연 기술 개발과 관련한 고전압 설계 문제의 해결 (Rev. C) PDF | HTML 16 May 2024
White paper 以可靠且經濟實惠的隔離技術解決高電壓設計挑戰 (Rev. C) PDF | HTML 07 Mar 2024
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 29 Feb 2024
White paper Addressing High-Volt Design Challenges w/ Reliable and Affordable Isolation Tech (Rev. C) PDF | HTML 26 Sep 2023
User guide UCC217xx and ISO5x5x Half-Bridge EVM User's Guide for Wolfspeed 1200-V SiC 01 Sep 2023
Certificate UCC217xx/-Q1 CQC Certificate of Product Certification 07 Jun 2023
Certificate UCC21750QDWEVM-054 EU RoHS Declaration of Conformity (DoC) 24 Aug 2022
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 Dec 2021
Application note Performance of the Analog PWM Channel in Smart Gate Drivers 16 Jan 2020
Design guide SiC/IGBT Isolated Gate Driver Reference Design With Thermal Diode and Sensing 18 Dec 2019
User guide UCC217xx Family Driving and Protecting SiC and IGBT Power Modules and Transistor (Rev. B) 09 Sep 2019
Application brief Why is high UVLO important for safe IGBT & SiC MOSFET power switch operation 30 Jan 2019

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

UCC21750QDWEVM-025 — Driving and protection evaluation board for SiC and IGBT transistors and power modules

The UCC21750QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, desat feature based protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms (...)
User guide: PDF
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Driver or library

UCC21750-Q1-DESIGN — UCC21750-Q1 design resources

Functional Safety Support Information
Supported products & hardware

Supported products & hardware

Products
Isolated gate drivers
UCC21750-Q1 — Automotive 5.7kVrms, ±10A single-channel isolated gate driver w/ DESAT & internal clamp for IGBT/SiC
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Simulation model

UCC21750 PSpice Transient Model

SLUM680.ZIP (90 KB) - PSpice Model
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Simulation model

UCC21750 Unencrypted PSPICE Transient Model

SLUM718.ZIP (6 KB) - PSpice Model
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Calculation tool

SLUC695 — UCC217xx XL Calculator Tool

Supported products & hardware

Supported products & hardware

Products
Isolated gate drivers
UCC21710-Q1 — Automotive 5.7kVrms 10A single-channel isolated gate driver with overcurrent protection for IGBT/SiC UCC21732-Q1 — Automotive 5.7-kVrms ±10A single-channel isolated gate driver with 2-level turn off for IGBT/SiCFETs UCC21736-Q1 — Automotive 5.7kVrms, ±10A isolated single-channel gate driver with active short circuit for IGBT/SiC UCC21739-Q1 — Automotive 3kVrms, ±10A single-channel isolated gate driver w/ isolated analog sensing for IGBT/SiC UCC21750 — 5.7kVrms ±10A, single-channel isolated gate driver w/ DESAT & internal miller clamp for IGBT/SiCFETs UCC21750-Q1 — Automotive 5.7kVrms, ±10A single-channel isolated gate driver w/ DESAT & internal clamp for IGBT/SiC UCC21759-Q1 — Automotive 3.0kVrms, ±10A single-channel isolated gate driver w/ DESAT & internal clamp for IGBT/SiC
Download
Schematic

UCC217xx, UCC217xx-Q1 Schematic and Layout Design Guidelines

SLUM917.ZIP (320 KB)
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Schematic

UCC21750QDWEVM-054 Schematic Files

SLURB30.ZIP (323 KB)
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Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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Reference designs

PMP23223 — Smart isolated gate driver with bias supply reference design

This reference design demonstrates the combination of UCC21732 gate driver with a UCC14xxx series bias supply. This design can be used to drive a variety of power switches, including connecting directly to a Wolfspeed Silicon Carbide (SiC) field-effect transistor (FET) module. This reference design (...)
Test report: PDF
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SOIC (DW) 16 Ultra Librarian
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  • Ongoing reliability monitoring
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