Product details

Rating Catalog Integrated isolated power No Isolation rating Reinforced Number of channels 3 Forward/reverse channels 2 forward / 1 reverse Default output High, Low Data rate (max) (Mbps) 100 Surge isolation voltage (VIOSM) (VPK) 12800 Transient isolation voltage (VIOTM) (VPK) 8000 Withstand isolation voltage (VISO) (Vrms) 5700 CMTI (min) (V/µs) 85000 Operating temperature range (°C) -55 to 125 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 2.25 Propagation delay time (typ) (µs) 0.0107 Current consumption per channel (DC) (typ) (mA) 1.03 Current consumption per channel (1 Mbps) (typ) (mA) 1.67 Creepage (min) (mm) 8, 14.5 Clearance (min) (mm) 8, 14.5
Rating Catalog Integrated isolated power No Isolation rating Reinforced Number of channels 3 Forward/reverse channels 2 forward / 1 reverse Default output High, Low Data rate (max) (Mbps) 100 Surge isolation voltage (VIOSM) (VPK) 12800 Transient isolation voltage (VIOTM) (VPK) 8000 Withstand isolation voltage (VISO) (Vrms) 5700 CMTI (min) (V/µs) 85000 Operating temperature range (°C) -55 to 125 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 2.25 Propagation delay time (typ) (µs) 0.0107 Current consumption per channel (DC) (typ) (mA) 1.03 Current consumption per channel (1 Mbps) (typ) (mA) 1.67 Creepage (min) (mm) 8, 14.5 Clearance (min) (mm) 8, 14.5
SOIC (DW) 16 106.09 mm² 10.3 x 10.3 SOIC (DWW) 16 177.675 mm² 10.3 x 17.25
  • Signaling Rate: Up to 100 Mbps
  • Wide Supply Range: 2.25 V to 5.5 V
  • 2.25 V to 5.5 V Level Translation
  • Wide Temperature Range: –55°C to 125°C
  • Low Power Consumption, Typical 1.7 mA per
    Channel at 1 Mbps
  • Low Propagation Delay: 11 ns Typical
    (5-V Supplies)
  • Industry leading CMTI (min): ±100 kV/µs
  • Robust Electromagnetic Compatibility (EMC)
  • System-Level ESD, EFT, and Surge Immunity
  • Low Emissions
  • Isolation Barrier Life: > 40 Years
  • SOIC-16 Wide Body (DW) and Extra-Wide Body
    (DWW) Package Options
  • Safety-Related Certifications:
    • 8000 VPK Reinforced Isolation per DIN V VDE
      V 0884-10 (VDE V 0884-10):2006-12
    • 5.7 kVRMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC
      60950-1 and IEC 60601-1 End Equipment
      Standards
    • CQC Certification per GB4943.1-2011
    • TUV Certification per EN 61010-1 and EN
      60950-1
    • All DW Package Certifications Complete;
      DWW Package Certifications Complete per
      UL, VDE, TUV and Planned for CSA and CQC
  • Signaling Rate: Up to 100 Mbps
  • Wide Supply Range: 2.25 V to 5.5 V
  • 2.25 V to 5.5 V Level Translation
  • Wide Temperature Range: –55°C to 125°C
  • Low Power Consumption, Typical 1.7 mA per
    Channel at 1 Mbps
  • Low Propagation Delay: 11 ns Typical
    (5-V Supplies)
  • Industry leading CMTI (min): ±100 kV/µs
  • Robust Electromagnetic Compatibility (EMC)
  • System-Level ESD, EFT, and Surge Immunity
  • Low Emissions
  • Isolation Barrier Life: > 40 Years
  • SOIC-16 Wide Body (DW) and Extra-Wide Body
    (DWW) Package Options
  • Safety-Related Certifications:
    • 8000 VPK Reinforced Isolation per DIN V VDE
      V 0884-10 (VDE V 0884-10):2006-12
    • 5.7 kVRMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC
      60950-1 and IEC 60601-1 End Equipment
      Standards
    • CQC Certification per GB4943.1-2011
    • TUV Certification per EN 61010-1 and EN
      60950-1
    • All DW Package Certifications Complete;
      DWW Package Certifications Complete per
      UL, VDE, TUV and Planned for CSA and CQC

The ISO7831x device is a high-performance, 3-channel digital isolator with 8000-VPK isolation voltage. This device has reinforced isolation certifications according to VDE, CSA, TUV and CQC. The isolator provides high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os.

Each isolation channel has a logic input and output buffer separated by silicon dioxide (SiO2) insulation barrier. This device comes with enable pins which can be used to put the respective outputs in high impedance for multi-master driving applications and to reduce power consumption. The ISO7831x device has two forward and one reverse-direction channels. If the input power or signal is lost, the default output is high for the ISO7831 device and low for the ISO7831F device. See Device Functional Modes for further details.

Used in conjunction with isolated power supplies, this device helps prevent noise currents on a data bus or other circuits from entering the local ground and interfering with or damaging sensitive circuitry. Through innovative chip design and layout techniques, electromagnetic compatibility of ISO7831x has been significantly enhanced to ease system-level ESD, EFT, surge, and emissions compliance. ISO7831x is available in a 16-pin SOIC wide-body (DW) and extra-wide body (DWW) packages.

The ISO7831x device is a high-performance, 3-channel digital isolator with 8000-VPK isolation voltage. This device has reinforced isolation certifications according to VDE, CSA, TUV and CQC. The isolator provides high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os.

Each isolation channel has a logic input and output buffer separated by silicon dioxide (SiO2) insulation barrier. This device comes with enable pins which can be used to put the respective outputs in high impedance for multi-master driving applications and to reduce power consumption. The ISO7831x device has two forward and one reverse-direction channels. If the input power or signal is lost, the default output is high for the ISO7831 device and low for the ISO7831F device. See Device Functional Modes for further details.

Used in conjunction with isolated power supplies, this device helps prevent noise currents on a data bus or other circuits from entering the local ground and interfering with or damaging sensitive circuitry. Through innovative chip design and layout techniques, electromagnetic compatibility of ISO7831x has been significantly enhanced to ease system-level ESD, EFT, surge, and emissions compliance. ISO7831x is available in a 16-pin SOIC wide-body (DW) and extra-wide body (DWW) packages.

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Technical documentation

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Type Title Date
* Data sheet ISO7831x High-Performance, 8000-VPK Reinforced Triple Digital Isolators datasheet (Rev. B) PDF | HTML 28 Jun 2016
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 29 Feb 2024
Application note Digital Isolator Design Guide (Rev. G) PDF | HTML 13 Sep 2023
White paper Improve Your System Performance by Replacing Optocouplers with Digital Isolators (Rev. C) PDF | HTML 07 Sep 2023
White paper Circuit Board Insulation Design According to IEC60664 for Motor Drive Apps PDF | HTML 31 Aug 2023
Certificate CQC Certificate for ISOxxDWx (Rev. J) 27 Mar 2023
Certificate CSA Certificate for ISO78xxDWx 13 Mar 2023
Certificate TUV Certificate for Isolation Devices (Rev. K) 05 Aug 2022
Certificate UL Certificate of Compliance File E181974 Vol 4 Sec 6 (Rev. P) 05 Aug 2022
White paper Why are Digital Isolators Certified to Meet Electrical Equipment Standards? 16 Nov 2021
White paper Distance Through Insulation: How Digital Isolators Meet Certification Requiremen PDF | HTML 11 Jun 2021
EVM User's guide Universal Digital Isolator Evaluation Module PDF | HTML 04 Mar 2021
Functional safety information Isolation in AC Motor Drives: Understanding the IEC 61800-5-1 Safety Standard (Rev. A) 19 Sep 2019
White paper Direct-drive configuration for GaN devices (Rev. A) 19 Nov 2018
Analog Design Journal Pushing the envelope with high-performance digital-isolation technology (Rev. A) 22 Aug 2018
Application brief Considerations for Selecting Digital Isolators 24 Jul 2018
Functional safety information Isolation in solar power converters: Understanding the IEC62109-1 safety standar (Rev. A) 18 May 2018
Analog Design Journal How to reduce radiated emissions of digital isolators for systems with RF module 26 Mar 2018
Application note Isolation Glossary (Rev. A) 19 Sep 2017
Technical article Is integrated GaN changing the conventional wisdom? PDF | HTML 07 Oct 2016
Analog Design Journal 4Q 2015 Analog Applications Journal 30 Oct 2015
Analog Design Journal Pushing the envelope with high-performance digital-isolation technology 30 Oct 2015
EVM User's guide ISO784xx Quad-Channel Digital Isolator EVM User Guide 17 Oct 2014
White paper Understanding electromagnetic compliance tests in digital isolators 17 Oct 2014
White paper High-voltage reinforced isolation: Definitions and test methodologies 16 Oct 2014

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

DIGI-ISO-EVM — Universal digital isolator evaluation module

DIGI-ISO-EVM is an evaluation module (EVM) used to evaluate any of the TI single-channel, dual-channel, triple-channel, quad-channel or six-channel digital isolator devices in five different packages - 8-pin narrow-body SOIC (D), 8-pin wide-body SOIC (DWV), 16-pin wide-body SOIC (DW), 16-pin ultra- (...)

User guide: PDF | HTML
Not available on TI.com
Evaluation board

ISO7842-EVM — High-Immunity, 5.7kVRMS Reinforced Quad-Channel 2/2 Digital Isolator Evaluation Module

The ISO7842 provides galvanic isolation up to 5700 VRMS for 1 minute per UL and 8000 VPK per VDE. This device has four isolated channels comprised of a logic input and output buffer separated by a silicon dioxide (SiO2) insulation barrier. Used in conjunction with isolated power supplies, this (...)

User guide: PDF
Not available on TI.com
Daughter card

LMG3410-HB-EVM — LMG3410R070 600-V 70-mΩ GaN half-bridge daughter card

The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG34XX half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter.  By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. (...)
User guide: PDF
Not available on TI.com
Simulation model

ISO7831 IBIS Model (Rev. B)

SLLM286B.ZIP (104 KB) - IBIS Model
Simulation model

ISO7831F IBIS Model

SLLM288.IBS (243 KB) - IBIS Model
Reference designs

PMP20873 — 99% Efficient 1kW GaN-based CCM Totem-pole Power Factor Correction (PFC) Converter Reference Design

Continuous-Conduction-Mode (CCM) Totem-pole power factor correction (PFC) is a simple but efficient power converter.  To achieve 99% efficiency, there are many design details that need to be taken into account.  The PMP20873 reference design uses TI’s 600VGaN  power stage, (...)
Test report: PDF
Schematic: PDF
Reference designs

TIDM-1007 — High efficiency GaN CCM totem pole bridgeless Power Factor Correction (PFC) reference design

Interleaved Continuous Conduction Mode (CCM) Totem Pole (TTPL) Bridgeless Power Factor Correction (PFC) is an attractive power topology with use of high band-gap GaN devices, because of high efficiency and reduced size of the power supply. This design illustrates a method to control this power (...)
Design guide: PDF
Schematic: PDF
Reference designs

TIDM-02008 — Bidirectional high density GaN CCM totem pole PFC using C2000™ MCU

This reference design is a 3.-kW bidirectional interleaved continuous conduction mode (CCM) totem-pole (TTPL) bridgeless power factor correction (PFC) power stage using a C2000™ real-time controller and LMG3410R070 gallium nitride (GaN) with integrated driver and protection. (...)
Design guide: PDF
Schematic: PDF
Package Pins CAD symbols, footprints & 3D models
SOIC (DW) 16 Ultra Librarian
SOIC (DWW) 16 Ultra Librarian

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