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LMG3624

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650V 170mΩ GaN FET with integrated driver, protection and current sensing

Product details

VDS (max) (V) 650 RDS(on) (mΩ) 170 ID (max) (A) 6 Features Bottom-side cooled, Current sense, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, Wide input voltage Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 650 RDS(on) (mΩ) 170 ID (max) (A) 6 Features Bottom-side cooled, Current sense, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, Wide input voltage Rating Catalog Operating temperature range (°C) -40 to 125
VQFN (REQ) 38 42.4 mm² 8 x 5.3
  • 650V 170mΩ GaN power FET
  • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
  • Current-sense emulation with high bandwidth and high accuracy
  • Cycle-by-cycle overcurrent protection
  • Overtemperature protection with FLT pin reporting
  • AUX quiescent current: 240µA
  • AUX standby quiescent current: 50µA
  • Maximum supply and input logic pin voltage: 26V
  • 8mm × 5.3mm QFN package with thermal pad
  • 650V 170mΩ GaN power FET
  • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
  • Current-sense emulation with high bandwidth and high accuracy
  • Cycle-by-cycle overcurrent protection
  • Overtemperature protection with FLT pin reporting
  • AUX quiescent current: 240µA
  • AUX standby quiescent current: 50µA
  • Maximum supply and input logic pin voltage: 26V
  • 8mm × 5.3mm QFN package with thermal pad

The LMG3624 is a 650V 170mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3624 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8mm by 5.3mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control. The current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The LMG3624 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO), cycle-by-cycle current limit, and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.

The LMG3624 is a 650V 170mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3624 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8mm by 5.3mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control. The current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The LMG3624 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO), cycle-by-cycle current limit, and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.

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Technical documentation

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* Data sheet LMG3624 650V 170 mΩ GaN FET With Integrated Driver and Current-Sense Emulation datasheet (Rev. A) PDF | HTML 12 Jun 2024
Technical article The benefits of low-power GaN in common AC/DC power topologies PDF | HTML 30 Jan 2024
Application brief Maximize System Efficiency With Integrated Current Sensing From TI GaN PDF | HTML 30 Nov 2023
Product overview Designing With the LMG362x Family of Low-Power GaN FETs PDF | HTML 28 Nov 2023

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG3624EVM-081 — LMG3624 evaluation module for 65-W quasi-resonant flyback converter with USB Type-C® PD

LMG3624EVM-081 demonstrates high efficiency and high density for a 65-W USB Type-C® Power Delivery (PD) off-line adapter using the LMG3624 integrated GaN FET with current-sense emulation. The input supports a universal 90 Vac to 265 Vac and the single output can be set to 5 V, 9 V and 15 V all (...)

User guide: PDF | HTML
Not available on TI.com
Calculation tool

LMG36XX-CALC LMG36XX Quasi-Resonant Flyback Power Stage Design Calculator

The purpose of this tool is to aid in the design of the main power stage components of a Quasi-Resonant Flyback Converter (QR) with the use LMG36XX integrated GaN FET. Calculations are provided for frequency, voltage/current stresses, and losses in converter.
Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) power stages
LMG3612 650-V 120-mΩ GaN FET with integrated driver and protection LMG3616 650-V 270-mΩ GaN FET with integrated driver and protection LMG3622 650V 120mΩ GaN FET with integrated driver, protection and current sensing LMG3624 650V 170mΩ GaN FET with integrated driver, protection and current sensing LMG3626 650V 270mΩ GaN FET with integrated driver, protection and current sensing
Reference designs

TIDA-050072 — 65-W GaN-based USB PD3.0 USB-C adapter reference design

This reference design is a 65-W USB PD3.0 adapter targeted for many charging applications including mobile phones, laptops and tablets. The design achieves high efficiency and power density with the use of LMG3624 integrated GaN FET with current sense emulation. High efficiency is enabled with the (...)
Design guide: PDF
Package Pins CAD symbols, footprints & 3D models
VQFN (REQ) 38 Ultra Librarian

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