Startseite Energiemanagement Gate-Treiber Low-Side-Treiber

UC3708

AKTIV

Zweikanaliger Gate-Treiber für 3 A/3 A mit 35-V-VDD, mit 25-ns-Prop-Verzögerung in einem 16-poligen

Produktdetails

Number of channels 2 Power switch IGBT, MOSFET Peak output current (A) 3 Input supply voltage (min) (V) 5 Input supply voltage (max) (V) 35 Features Enable pin, Shutdown, Thermal shutdown Operating temperature range (°C) 0 to 70 Rise time (ns) 25 Fall time (ns) 25 Propagation delay time (µs) 0.025 Input threshold CMOS, TTL Channel input logic Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3 Driver configuration Dual
Number of channels 2 Power switch IGBT, MOSFET Peak output current (A) 3 Input supply voltage (min) (V) 5 Input supply voltage (max) (V) 35 Features Enable pin, Shutdown, Thermal shutdown Operating temperature range (°C) 0 to 70 Rise time (ns) 25 Fall time (ns) 25 Propagation delay time (µs) 0.025 Input threshold CMOS, TTL Channel input logic Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3 Driver configuration Dual
PDIP (N) 16 181.42 mm² 19.3 x 9.4 PDIP (P) 8 92.5083 mm² 9.81 x 9.43 SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 3.0A Peak Current Totem Pole Output
  • 5 to 35V Operation
  • 25ns Rise and Fall Times
  • 25ns Propagation Delays
  • Thermal Shutdown and Under-Voltage Protection
  • High-Speed, Power MOSFET Compatible
  • Efficient High Frequency Operation
  • Low Cross-Conduction Current Spike
  • Enable and Shutdown Functions
  • Wide Input Voltage Range
  • ESD Protection to 2kV

  • 3.0A Peak Current Totem Pole Output
  • 5 to 35V Operation
  • 25ns Rise and Fall Times
  • 25ns Propagation Delays
  • Thermal Shutdown and Under-Voltage Protection
  • High-Speed, Power MOSFET Compatible
  • Efficient High Frequency Operation
  • Low Cross-Conduction Current Spike
  • Enable and Shutdown Functions
  • Wide Input Voltage Range
  • ESD Protection to 2kV

The UC1708 family of power drivers is made with a high-speed, high-voltage, Schottky process to interface control functions and high-power switching devices — particularly power MOSFETs. Operating over a 5 V to 35 V supply range, these devices contain two independent channels. The A and B inputs are compatible with TTL and CMOS logic families, but can withstand input voltages as high as VIN. Each output can source or sink up to 3 A as long as power dissipation limits are not exceeded.

Although each output can be activated independently with its own inputs, they can be forced low in common through the action of either a digital high signal at the Shutdown terminal or by forcing the Enable terminal low. The Shutdown terminal will only force the outputs low, it will not effect the behavior of the rest of the device. The Enable terminal effectively places the device in under-voltage lockout, reducing power consumption by as much as 90%. During under-voltage and disable (Enable terminal forced low) conditions, the outputs are held in a self-biasing, low-voltage, state.

The UC3708 and UC2708 are available in plastic 8-pin MINI DIP and 16-pin bat-wing DIP packages for commercial operation over a 0°C to 70°C temperature range and industrial temperature range of -25°C to 85°C respectively. For operation over a -55°C to 125°C temperature range, the UC1708 is available in hermetically sealed 8-pin MINI CDIP, 16 pin CDIP and 20 pin CLCC packages. Surface mount devices are also available.

The UC1708 family of power drivers is made with a high-speed, high-voltage, Schottky process to interface control functions and high-power switching devices — particularly power MOSFETs. Operating over a 5 V to 35 V supply range, these devices contain two independent channels. The A and B inputs are compatible with TTL and CMOS logic families, but can withstand input voltages as high as VIN. Each output can source or sink up to 3 A as long as power dissipation limits are not exceeded.

Although each output can be activated independently with its own inputs, they can be forced low in common through the action of either a digital high signal at the Shutdown terminal or by forcing the Enable terminal low. The Shutdown terminal will only force the outputs low, it will not effect the behavior of the rest of the device. The Enable terminal effectively places the device in under-voltage lockout, reducing power consumption by as much as 90%. During under-voltage and disable (Enable terminal forced low) conditions, the outputs are held in a self-biasing, low-voltage, state.

The UC3708 and UC2708 are available in plastic 8-pin MINI DIP and 16-pin bat-wing DIP packages for commercial operation over a 0°C to 70°C temperature range and industrial temperature range of -25°C to 85°C respectively. For operation over a -55°C to 125°C temperature range, the UC1708 is available in hermetically sealed 8-pin MINI CDIP, 16 pin CDIP and 20 pin CLCC packages. Surface mount devices are also available.

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Technische Dokumentation

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Typ Titel Datum
* Data sheet Dual Non-Inverting Power Driver datasheet (Rev. C) 25 Sep 2007
Application note Why use a Gate Drive Transformer? PDF | HTML 04 Mär 2024
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 22 Jan 2024
Application note Static Magnet Power Supply Design for Magnetic Resonance Imaging Application PDF | HTML 22 Jan 2024
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
Application note Improving Efficiency of DC-DC Conversion through Layout 07 Mai 2019
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs 18 Jan 2019
Application brief High-Side Cutoff Switches for High-Power Automotive Applications (Rev. A) 26 Nov 2018
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Okt 2018
Application note DN-35 IGBT Drive Using MOSFET Gate Drivers (Rev. A) 21 Jun 2018
Application brief Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole 16 Mär 2018
Application note U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching Characteristics 05 Sep 1999
Application note U-137 Practical Considerations in High Performance MOSFET, IGBT and MCT Gate 05 Sep 1999

Design und Entwicklung

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PDIP (P) 8 Ultra Librarian
SOIC (DW) 16 Ultra Librarian

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