The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
| Tipo | Título | Fecha | ||
|---|---|---|---|---|
| * | Data sheet | EMB1412 MOSFET Gate Driver datasheet (Rev. B) | PDF | HTML | 20 nov 2014 |
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 28 feb 2020 | ||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 28 feb 2020 |
Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.
| Encapsulado | Pines | Símbolos CAD, huellas y modelos 3D |
|---|---|---|
| HVSSOP (DGN) | 8 | Ultra Librarian |
El contenido lo proporcionan “tal como está” TI y los colaboradores de la comunidad y no constituye especificaciones de TI. Consulte los términos de uso.
Si tiene preguntas sobre la calidad, el paquete o el pedido de productos de TI, consulte el soporte de TI.