Detalles del producto

Rating Automotive Integrated isolated power No Isolation rating Basic, Reinforced Number of channels 2 Forward/reverse channels 1 forward / 1 reverse Default output High, Low Data rate (max) (Mbps) 100 Surge isolation voltage (VIOSM) (VPK) 10000, 12800 Transient isolation voltage (VIOTM) (VPK) 4242, 7071, 8000 Withstand isolation voltage (VISO) (Vrms) 3000, 5000 CMTI (min) (V/µs) 85000 Operating temperature range (°C) -40 to 125 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 2.25 Propagation delay time (typ) (µs) 0.0107, 0.011 Current consumption per channel (DC) (typ) (mA) 1 Current consumption per channel (1 Mbps) (typ) (mA) 1.6 Creepage (min) (mm) 4, 8, 8.5 Clearance (min) (mm) 4, 8, 8.5 TI functional safety category Functional Safety-Capable
Rating Automotive Integrated isolated power No Isolation rating Basic, Reinforced Number of channels 2 Forward/reverse channels 1 forward / 1 reverse Default output High, Low Data rate (max) (Mbps) 100 Surge isolation voltage (VIOSM) (VPK) 10000, 12800 Transient isolation voltage (VIOTM) (VPK) 4242, 7071, 8000 Withstand isolation voltage (VISO) (Vrms) 3000, 5000 CMTI (min) (V/µs) 85000 Operating temperature range (°C) -40 to 125 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 2.25 Propagation delay time (typ) (µs) 0.0107, 0.011 Current consumption per channel (DC) (typ) (mA) 1 Current consumption per channel (1 Mbps) (typ) (mA) 1.6 Creepage (min) (mm) 4, 8, 8.5 Clearance (min) (mm) 4, 8, 8.5 TI functional safety category Functional Safety-Capable
SOIC (D) 8 29.4 mm² 4.9 x 6 SOIC (DW) 16 106.09 mm² 10.3 x 10.3 SOIC (DWV) 8 67.275 mm² 5.85 x 11.5
  • Qualified for automotive applications
  • AEC-Q100 qualified With the following results:
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classification level C6
  • Functional Safety-Capable
  • 100 Mbps data rate
  • Robust isolation barrier:
    • >30-Year projected lifetime at 1.5 kV RMS working voltage
    • Up to 5000 V RMS Isolation Rating
    • Up to 12.8 kV surge capability
    • ±100 kV/µs Typical CMTI
  • Wide supply range: 2.25 V to 5.5 V
  • 2.25-V to 5.5-V level translation
  • Default output High (ISO772x) and Low (ISO772xF) Options
  • Low power consumption, typical 1.7 mA per channel at 1 Mbps
  • Low propagation delay: 11 ns typical
  • Robust electromagnetic compatibility (EMC)
    • System-Level ESD, EFT, and surge immunity
    • ±8 kV IEC 61000-4-2 contact discharge protection across isolation barrier
    • Low emissions
  • Wide-SOIC (DW-16 , DWV-8) and Narrow-SOIC (D-8) package options
  • Safety-related Certifications
    • VDE reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17)
    • UL 1577 component recognition program
    • IEC 62368-1, IEC 61010-1, IEC 60601-1 and GB 4943.1 certifications
  • Qualified for automotive applications
  • AEC-Q100 qualified With the following results:
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classification level C6
  • Functional Safety-Capable
  • 100 Mbps data rate
  • Robust isolation barrier:
    • >30-Year projected lifetime at 1.5 kV RMS working voltage
    • Up to 5000 V RMS Isolation Rating
    • Up to 12.8 kV surge capability
    • ±100 kV/µs Typical CMTI
  • Wide supply range: 2.25 V to 5.5 V
  • 2.25-V to 5.5-V level translation
  • Default output High (ISO772x) and Low (ISO772xF) Options
  • Low power consumption, typical 1.7 mA per channel at 1 Mbps
  • Low propagation delay: 11 ns typical
  • Robust electromagnetic compatibility (EMC)
    • System-Level ESD, EFT, and surge immunity
    • ±8 kV IEC 61000-4-2 contact discharge protection across isolation barrier
    • Low emissions
  • Wide-SOIC (DW-16 , DWV-8) and Narrow-SOIC (D-8) package options
  • Safety-related Certifications
    • VDE reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17)
    • UL 1577 component recognition program
    • IEC 62368-1, IEC 61010-1, IEC 60601-1 and GB 4943.1 certifications

The ISO772x-Q1 devices are high-performance, dual-channel digital isolators with 5000 V RMS (DW and DWV packages) and 3000 V RMS (D package) isolation ratings per UL 1577. This family includes devices with reinforced insulation ratings according to VDE, CSA, TUV and CQC.

The ISO772x-Q1 devices provide high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os. Each isolation channel has a logic input and output buffer separated by a double capacitive silicon dioxide (SiO 2) insulation barrier. The ISO7720-Q1 device has both channels in the same direction while the ISO7721-Q1 device has both channels in the opposite direction. In the event of input power or signal loss, the default output is high for devices without suffix F and low for devices with suffix F. See the Device Functional Modes section for further details.

Used in conjunction with isolated power supplies, these devices help prevent noise currents on data buses, such as CAN and LIN, from damaging sensitive circuitry. Through innovative chip design and layout techniques, the electromagnetic compatibility of the ISO772x-Q1 devices has been significantly enhanced to ease system-level ESD, EFT, surge, and emissions compliance. The ISO772x-Q1 family of devices is available in 16-pin SOIC wide-body (DW) , 8-pin SOIC wide-body (DWV), and 8-pin SOIC narrow-body (D) packages.

The ISO772x-Q1 devices are high-performance, dual-channel digital isolators with 5000 V RMS (DW and DWV packages) and 3000 V RMS (D package) isolation ratings per UL 1577. This family includes devices with reinforced insulation ratings according to VDE, CSA, TUV and CQC.

The ISO772x-Q1 devices provide high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os. Each isolation channel has a logic input and output buffer separated by a double capacitive silicon dioxide (SiO 2) insulation barrier. The ISO7720-Q1 device has both channels in the same direction while the ISO7721-Q1 device has both channels in the opposite direction. In the event of input power or signal loss, the default output is high for devices without suffix F and low for devices with suffix F. See the Device Functional Modes section for further details.

Used in conjunction with isolated power supplies, these devices help prevent noise currents on data buses, such as CAN and LIN, from damaging sensitive circuitry. Through innovative chip design and layout techniques, the electromagnetic compatibility of the ISO772x-Q1 devices has been significantly enhanced to ease system-level ESD, EFT, surge, and emissions compliance. The ISO772x-Q1 family of devices is available in 16-pin SOIC wide-body (DW) , 8-pin SOIC wide-body (DWV), and 8-pin SOIC narrow-body (D) packages.

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Documentación técnica

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* Data sheet ISO772x-Q1High-Speed, Robust EMC, Reinforced Dual-Channel Digital Isolators datasheet (Rev. C) PDF | HTML 09 may 2023
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. S) 29 feb 2024
White paper Improve Your System Performance by Replacing Optocouplers with Digital Isolators (Rev. C) PDF | HTML 07 sep 2023
Certificate CQC Certificate for ISOxxDWx (Rev. J) 27 mar 2023
Certificate CSA Certificate for ISO77xxDW 13 mar 2023
Certificate CSA Certificate for ISO77xxDWV 13 mar 2023
Certificate CSA Certificate for ISO77xxD 03 mar 2023
Application note IEC60601-1-2 Compliant Dig. Iso Design W/ 16-kV Contact Discharge ESD Protection PDF | HTML 16 feb 2023
Certificate CQC Certificate for ISOxxD (Rev. A) 07 feb 2023
Certificate CQC Certificate for ISOxxDWV (Rev. A) 07 feb 2023
Certificate TUV Certificate for Isolation Devices (Rev. K) 05 ago 2022
Certificate UL Certificate of Compliance File E181974 Vol 4 Sec 6 (Rev. P) 05 ago 2022
White paper Why are Digital Isolators Certified to Meet Electrical Equipment Standards? 16 nov 2021
White paper Distance Through Insulation: How Digital Isolators Meet Certification Requiremen PDF | HTML 11 jun 2021
Application brief How to Replace Optocouplers with Digital Isolators in Standard Interface Circuit (Rev. A) PDF | HTML 19 may 2021
EVM User's guide Universal Digital Isolator Evaluation Module PDF | HTML 04 mar 2021
Functional safety information ISO7721-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA 17 mar 2020
Technical article Why signal isolation matters in 48-V HEV/EV systems PDF | HTML 20 nov 2019
User guide ISO77xxD Single- and Dual-Digital Isolator Evaluation Module (Rev. A) 25 feb 2019
Application brief Considerations for Selecting Digital Isolators 24 jul 2018

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

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Guía del usuario: PDF | HTML
Placa de evaluación

ISO7721DEVM — Módulo de evaluación para aislador digital de doble canal EMC resistente y de alta velocidad ISO7721

The ISO7721DEVM is an evaluaiton module (EVM) used to evaluate the ISO7721 high-performance, reinforced dual-channel digital isolator in an 8-pin narrow SOIC package (package code, D). The EVM features enough test points and jumper options for you to evaluate the device with minimal (...)
Guía del usuario: PDF
Placa de evaluación

ISO7741EVM — Módulo de evaluación de aislador digital de cuatro canales con EMC resistente y alta velocidad ISO77

The ISO7741EVM is an evaluaiton module (EVM) to evaluate the ISO7741. The ISO7741 is a high-performance, reinforced quad-channel digital isolator in a wide-body SOIC package (package code DW). The EVM features enough test points and jumber options for you to evaluate the (...)
Guía del usuario: PDF
Modelo de simulación

ISO7721 IBIS Model (Rev. B)

SLLM332B.ZIP (52 KB) - IBIS Model
Modelo de simulación

ISO7721 PSpice Transient Model

SLLM474.ZIP (183 KB) - PSpice Model
Diseños de referencia

TIDA-01605 — Diseño de referencia de controlador de puerta SiC MOSFET de dos canales para automoción, con protecc

This reference design is an automotive qualified isolated gate driver solution for driving Silicon Carbide (SiC) MOSFETs in half bridge configuration. The design includes two push pull bias supplies for the dual channel isolated gate driver respectively and each supply provides +15V and -4V output (...)
Design guide: PDF
Esquema: PDF
Encapsulado Pines Símbolos CAD, huellas y modelos 3D
SOIC (D) 8 Ultra Librarian
SOIC (DW) 16 Ultra Librarian
SOIC (DWV) 8 Ultra Librarian

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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