SN74LVC2G00W-EP

ACTIVO

Puertas NAND de producto mejorado de 2 canales, 2 entradas, 1.65 V a 5.5 V

Detalles del producto

Technology family LVC Supply voltage (min) (V) 1.65 Supply voltage (max) (V) 5.5 Number of channels 2 Inputs per channel 2 IOL (max) (mA) 32 IOH (max) (mA) -32 Input type Standard CMOS Output type Push-Pull Features Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Data rate (max) (Mbps) 100 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 115
Technology family LVC Supply voltage (min) (V) 1.65 Supply voltage (max) (V) 5.5 Number of channels 2 Inputs per channel 2 IOL (max) (mA) 32 IOH (max) (mA) -32 Input type Standard CMOS Output type Push-Pull Features Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Data rate (max) (Mbps) 100 Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 115
SSOP (DCT) 8 11.8 mm² 2.95 x 4
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of -55°C to 115°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • Supports 5-V VCC Operation
  • Inputs Accept Voltages to 5.5 V
  • Max tpd of 5.3 ns at 3.3 V
  • Low Power Consumption, 10-µA Max ICC
  • ±24-mA Output Drive at 3.3 V
  • Typical VOLP (Output Ground Bounce) <0.8 V at VCC = 3.3 V, TA = 25°C
  • Typical VOHV (Output VOH Undershoot) >2 V at VCC = 3.3 V, TA = 25°C
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 1000-V Charged-Device Model (C101)

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified
performance and environmental limits.

  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of -55°C to 115°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • Supports 5-V VCC Operation
  • Inputs Accept Voltages to 5.5 V
  • Max tpd of 5.3 ns at 3.3 V
  • Low Power Consumption, 10-µA Max ICC
  • ±24-mA Output Drive at 3.3 V
  • Typical VOLP (Output Ground Bounce) <0.8 V at VCC = 3.3 V, TA = 25°C
  • Typical VOHV (Output VOH Undershoot) >2 V at VCC = 3.3 V, TA = 25°C
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 1000-V Charged-Device Model (C101)

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified
performance and environmental limits.

This dual 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCC operation.

The SN74LVC2G00W-EP performs the Boolean function Y = A • B or Y = A + B in positive logic.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

This dual 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCC operation.

The SN74LVC2G00W-EP performs the Boolean function Y = A • B or Y = A + B in positive logic.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

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Documentación técnica

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Tipo Título Fecha
* Data sheet SN74LVC2G00W-EP datasheet 05 ago 2005
* VID SN74LVC2G00W-EP VID V6205623 21 jun 2016
Application note Implications of Slow or Floating CMOS Inputs (Rev. E) 26 jul 2021
Selection guide Little Logic Guide 2018 (Rev. G) 06 jul 2018
Selection guide Logic Guide (Rev. AB) 12 jun 2017
Application note How to Select Little Logic (Rev. A) 26 jul 2016
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 02 dic 2015
User guide LOGIC Pocket Data Book (Rev. B) 16 ene 2007
Product overview Design Summary for WCSP Little Logic (Rev. B) 04 nov 2004
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 jul 2004
Application note Selecting the Right Level Translation Solution (Rev. A) 22 jun 2004
User guide Signal Switch Data Book (Rev. A) 14 nov 2003
Application note Use of the CMOS Unbuffered Inverter in Oscillator Circuits 06 nov 2003
User guide LVC and LV Low-Voltage CMOS Logic Data Book (Rev. B) 18 dic 2002
Application note Texas Instruments Little Logic Application Report 01 nov 2002
Application note TI IBIS File Creation, Validation, and Distribution Processes 29 ago 2002
More literature Standard Linear & Logic for PCs, Servers & Motherboards 13 jun 2002
Application note 16-Bit Widebus Logic Families in 56-Ball, 0.65-mm Pitch Very Thin Fine-Pitch BGA (Rev. B) 22 may 2002
Application note Power-Up 3-State (PU3S) Circuits in TI Standard Logic Devices 10 may 2002
More literature STANDARD LINEAR AND LOGIC FOR DVD/VCD PLAYERS 27 mar 2002
Application note Migration From 3.3-V To 2.5-V Power Supplies For Logic Devices 01 dic 1997
Application note Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 01 ago 1997
Application note CMOS Power Consumption and CPD Calculation (Rev. B) 01 jun 1997
Application note LVC Characterization Information 01 dic 1996
Application note Input and Output Characteristics of Digital Integrated Circuits 01 oct 1996
Application note Live Insertion 01 oct 1996
Design guide Low-Voltage Logic (LVC) Designer's Guide 01 sep 1996
Application note Understanding Advanced Bus-Interface Products Design Guide 01 may 1996

Diseño y desarrollo

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