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TLE2022M-MIL

アクティブ

高速、低消費電力、高精度デュアル・オペアンプ

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データシート

TLE2022M-MIL

アクティブ
データシート ご注文はこちら

製品詳細

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4 Vos (offset voltage at 25°C) (max) (mV) 0.6 Offset drift (typ) (µV/°C) 2 Input bias current (max) (pA) 70000 GBW (typ) (MHz) 1.7 Slew rate (typ) (V/µs) 0.5 Rail-to-rail In to V- Iq per channel (typ) (mA) 0.225 Vn at 1 kHz (typ) (nV√Hz) 17 CMRR (typ) (dB) 100 Rating Military Operating temperature range (°C) -55 to 125 Iout (typ) (A) 0.003 Architecture Bipolar Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -1 Output swing headroom (to negative supply) (typ) (V) 0.7 Output swing headroom (to positive supply) (typ) (V) -0.7
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4 Vos (offset voltage at 25°C) (max) (mV) 0.6 Offset drift (typ) (µV/°C) 2 Input bias current (max) (pA) 70000 GBW (typ) (MHz) 1.7 Slew rate (typ) (V/µs) 0.5 Rail-to-rail In to V- Iq per channel (typ) (mA) 0.225 Vn at 1 kHz (typ) (nV√Hz) 17 CMRR (typ) (dB) 100 Rating Military Operating temperature range (°C) -55 to 125 Iout (typ) (A) 0.003 Architecture Bipolar Input common mode headroom (to negative supply) (typ) (V) -0.3 Input common mode headroom (to positive supply) (typ) (V) -1 Output swing headroom (to negative supply) (typ) (V) 0.7 Output swing headroom (to positive supply) (typ) (V) -0.7
CDIP (JG) 8 64.032 mm² 9.6 x 6.67 LCCC (FK) 20 79.0321 mm² 8.89 x 8.89
  • Supply Current . . . 300 µA Max
  • High Unity-Gain Bandwidth . . . 2 MHz Typ
  • High Slew Rate . . . 0.45 V/µs Min
  • Supply-Current Change Over Military Temp
    Range . . . 10 µA Typ at VCC ± = ± 15 V
  • Specified for Both 5-V Single-Supply and ±15-V Operation
  • Phase-Reversal Protection
  • High Open-Loop Gain . . . 6.5 V/µV (136 dB) Typ
  • Low Offset Voltage . . . 100 µV Max
  • Offset Voltage Drift With Time
    0.005 µV/mo Typ
  • Low Input Bias Current . . . 50 nA Max
  • Low Noise Voltage . . . 19 nV/√Hz Typ

All trademarks are the property of their respective owners.
  • Supply Current . . . 300 µA Max
  • High Unity-Gain Bandwidth . . . 2 MHz Typ
  • High Slew Rate . . . 0.45 V/µs Min
  • Supply-Current Change Over Military Temp
    Range . . . 10 µA Typ at VCC ± = ± 15 V
  • Specified for Both 5-V Single-Supply and ±15-V Operation
  • Phase-Reversal Protection
  • High Open-Loop Gain . . . 6.5 V/µV (136 dB) Typ
  • Low Offset Voltage . . . 100 µV Max
  • Offset Voltage Drift With Time
    0.005 µV/mo Typ
  • Low Input Bias Current . . . 50 nA Max
  • Low Noise Voltage . . . 19 nV/√Hz Typ

All trademarks are the property of their respective owners.

The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth.

The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.

The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. This means that a precision device remains a precision device even with changes in temperature and over years of use.

This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices the ideal choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs goes below the negative supply rail.

A variety of available options includes small-outline and chip-carrier versions for high-density systems applications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth.

The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.

The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. This means that a precision device remains a precision device even with changes in temperature and over years of use.

This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices the ideal choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs goes below the negative supply rail.

A variety of available options includes small-outline and chip-carrier versions for high-density systems applications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.
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種類 タイトル 最新の英語版をダウンロード 日付
* データシート Excalibur High-Speed Low-Power Precision Operational Amplifiers. データシート (Rev. D) 2010年 11月 24日

購入と品質

記載されている情報：
  • RoHS
  • REACH
  • デバイスのマーキング
  • リード端子の仕上げ / ボールの原材料
  • MSL 定格 / ピーク リフロー
  • MTBF/FIT 推定値
  • 使用原材料
  • 認定試験結果
  • 継続的な信頼性モニタ試験結果
記載されている情報：
  • ファブの拠点
  • 組み立てを実施した拠点

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