UCC27512-EP
- Low-Cost, Gate-Driver Device Offering Superior Replacement
of NPN and PNP Discrete Solutions - 4-A Peak Source and 8-A Peak Sink Asymmetrical Drive
- Strong Sink Current Offers Enhanced Immunity Against Miller Turn On
- Fast Propagation Delays (13-ns typical)
- Fast Rise and Fall Times (9-ns and 7-ns typical)
- 4.5-V to 18-V Single Supply Range
- Outputs Held Low During VDD UVLO (ensures glitch free operation at
power-up and power-down) - TTL and CMOS Compatible Input Logic Threshold,
(independent of supply voltage) - Hysteretic Logic Thresholds for High Noise Immunity
- Dual Input Design (choice of an inverting (IN- pin) or non-inverting
(IN+ pin) driver configuration)- Unused Input Pin can be Used for Enable or Disable Function
- Output Held Low when Input Pins are Floating
- Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin
Bias Supply Voltage - 6-Pin DRS (3mm × 3 mm WSON with exposed thermal pad) Package
Supports Defense, Aerospace, and Medical Applications
- Controlled Baseline
- One Assembly and Test Site
- One Fabrication Site
- Available in Military (–55°C to 125°C) Temperature Range
- Extended Product Life Cycle
- Extended Product-Change Notification
- Product Traceability
The UCC27512 single-channel, high-speed, low-side gate driver device is capable of effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27512 is capable of sourcing and sinking high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.
The UCC27512 provides 4-A source, 8-A sink (asymmetrical drive) peak-drive current capability. Strong sink capability in asymmetrical drive boosts immunity against parasitic, Miller turn-on effect.
UCC27512 is designed to operate over a wide VDD range of 4.5 V to 18 V and wide temperature range of 55°C to 125°C. Internal Under Voltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best in class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power semiconductor devices.
技術資料
種類 | タイトル | 最新の英語版をダウンロード | 日付 | |||
---|---|---|---|---|---|---|
* | データシート | Single Channel High-Speed, Low-Side Gate Driver (With 4-A/8-A Peak Source/Sink). データシート | 2013年 6月 10日 | |||
* | 放射線と信頼性レポート | UCC27512MDRSTEP Reliability Report | 2016年 2月 9日 | |||
アプリケーション概要 | External Gate Resistor Selection Guide (Rev. A) | 2020年 2月 28日 | ||||
アプリケーション概要 | Understanding Peak IOH and IOL Currents (Rev. A) | 2020年 2月 28日 |
設計および開発
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パッケージ | ピン数 | CAD シンボル、フットプリント、および 3D モデル |
---|---|---|
WSON (DRS) | 6 | Ultra Librarian |
購入と品質
- RoHS
- REACH
- デバイスのマーキング
- リード端子の仕上げ / ボールの原材料
- MSL 定格 / ピーク リフロー
- MTBF/FIT 推定値
- 使用原材料
- 認定試験結果
- 継続的な信頼性モニタ試験結果
- ファブの拠点
- 組み立てを実施した拠点
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