LPC662

활성

듀얼, 15V, 350kHz 연산 증폭기

제품 상세 정보

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 15 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 5 Rail-to-rail In to V-, Out GBW (typ) (MHz) 0.35 Slew rate (typ) (V/µs) 0.11 Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 0.043 Vn at 1 kHz (typ) (nV√Hz) 42 Rating Catalog Operating temperature range (°C) -40 to 85 Offset drift (typ) (µV/°C) 1.3 Input bias current (max) (pA) 4 CMRR (typ) (dB) 83 Iout (typ) (A) 0.021 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.4 Input common mode headroom (to positive supply) (typ) (V) -1.9 Output swing headroom (to negative supply) (typ) (V) 0.004 Output swing headroom (to positive supply) (typ) (V) -0.013
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 15 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 5 Rail-to-rail In to V-, Out GBW (typ) (MHz) 0.35 Slew rate (typ) (V/µs) 0.11 Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 0.043 Vn at 1 kHz (typ) (nV√Hz) 42 Rating Catalog Operating temperature range (°C) -40 to 85 Offset drift (typ) (µV/°C) 1.3 Input bias current (max) (pA) 4 CMRR (typ) (dB) 83 Iout (typ) (A) 0.021 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) -0.4 Input common mode headroom (to positive supply) (typ) (V) -1.9 Output swing headroom (to negative supply) (typ) (V) 0.004 Output swing headroom (to positive supply) (typ) (V) -0.013
SOIC (D) 8 29.4 mm² 4.9 x 6

Rail-to-rail output swing

 

Micropower operation (<0.5 mW)

 

Specified for 100 k and 5 k loads

 

High voltage gain

120 dB

Low input offset voltage

3 mV

Low offset voltage drift

1.3 µV/°C

Ultra low input bias current

2 fA

Input common-mode includes GND

 

Operating range from +5V to +15V

 

Low distortion

0.01% at 1 kHz

Slew rate

0.11 V/µs

Full military temperature range available

 

Rail-to-rail output swing

 

Micropower operation (<0.5 mW)

 

Specified for 100 k and 5 k loads

 

High voltage gain

120 dB

Low input offset voltage

3 mV

Low offset voltage drift

1.3 µV/°C

Ultra low input bias current

2 fA

Input common-mode includes GND

 

Operating range from +5V to +15V

 

Low distortion

0.01% at 1 kHz

Slew rate

0.11 V/µs

Full military temperature range available

 

The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 k and 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW.

This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.

See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features.


The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 k and 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW.

This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.

See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features.


다운로드

관심 가지실만한 유사 제품

open-in-new 대안 비교
비교 대상 장치와 동일한 기능을 지원하는 핀 대 핀
LMC662 활성 듀얼, 15.5V, 1.4MHz, 저 오프셋 드리프트 연산 증폭기 Improved voltage noise (22 nV/√Hz) with wider bandwidth (1.4 MHz) and higher power consumption (0.38 mA)

기술 자료

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* Data sheet LPC662 Low Power CMOS Dual Operational Amplifier datasheet (Rev. B) 2004/05/01

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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