SN74BCT25244
- State-of-the-Art BiCMOS Design Significantly Reduces ICCZ
- ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
- Designed to Facilitate Incident-Wave Switching for Line Impedances of 25 or Greater
- Distributed VCC and GND Pins Minimize Noise Generated by the Simultaneous Switching of Outputs
- Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)
These 25- octal buffers and line drivers are designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters.
These buffers are capable of sinking 188-mA IOL, which facilitates switching 25- transmission lines on the incident wave. The distributed VCC and GND pins minimize switching noise for more reliable system operation.
When the output-enable (1 and 2) inputs are low, the device transmits data from the A inputs to the Y outputs. When 1 and 2 are high, the outputs are in the high-impedance state.
The SN54BCT25244 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74BCT25244 is characterized for operation from 0°C to 70°C.
관심 가지실만한 유사 제품
비교 대상 장치와 동일한 기능을 지원하는 핀 대 핀
기술 자료
유형 | 직함 | 날짜 | ||
---|---|---|---|---|
* | Data sheet | 25-Ohm Line Drivers With 3-State Outputs datasheet (Rev. A) | 1991/11/01 |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치