홈 증폭기 연산 증폭기 (op amps) 정밀 연산 증폭기(Vos<1mV)
홈
증폭기
연산 증폭기 (op amps)
정밀 연산 증폭기(Vos<1mV)

TLC2201-SP

활성

우주 저잡음 정밀 고급 LinCMOS™ 단일 연산 증폭기

지금 주문
데이터 시트

TLC2201-SP

활성
데이터 시트 지금 주문

제품 상세 정보

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.6 Vos (offset voltage at 25°C) (max) (mV) 0.2 Offset drift (typ) (µV/°C) 0.5 Input bias current (max) (pA) 60 GBW (typ) (MHz) 1.8 Slew rate (typ) (V/µs) 2.5 Rail-to-rail In to V-, Out Iq per channel (typ) (mA) 1 Vn at 1 kHz (typ) (nV√Hz) 8 CMRR (typ) (dB) 110 Rating Space Operating temperature range (°C) -55 to 125 Iout (typ) (A) 0.0045 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) -2.3 Output swing headroom (to negative supply) (typ) (V) 0.05 Output swing headroom (to positive supply) (typ) (V) -0.2
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.6 Vos (offset voltage at 25°C) (max) (mV) 0.2 Offset drift (typ) (µV/°C) 0.5 Input bias current (max) (pA) 60 GBW (typ) (MHz) 1.8 Slew rate (typ) (V/µs) 2.5 Rail-to-rail In to V-, Out Iq per channel (typ) (mA) 1 Vn at 1 kHz (typ) (nV√Hz) 8 CMRR (typ) (dB) 110 Rating Space Operating temperature range (°C) -55 to 125 Iout (typ) (A) 0.0045 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) -2.3 Output swing headroom (to negative supply) (typ) (V) 0.05 Output swing headroom (to positive supply) (typ) (V) -0.2
LCCC (FK) 20 79.0321 mm² 8.89 x 8.89
  • QML-V Qualifed SMD 5962-9088203V2A
  • Low Input Offset Voltage: 400 µV Max
  • Excellent Offset Voltage Stability
    With Temperature: 0.5 µV/°C Typ
  • Rail-to-Rail Output Swing
  • Low Input Bias Current:
    1 pA Typ at TA = 25°C
  • Common-Mode Input Voltage Range
    Includes the Negative Rail
  • Fully Specified For Both Single-Supply and
    Split-Supply Operation

LinCMOS is a trademark of Texas Instruments.
Parts, PSpice are trademarks of MicroSim Corporation.
  • QML-V Qualifed SMD 5962-9088203V2A
  • Low Input Offset Voltage: 400 µV Max
  • Excellent Offset Voltage Stability
    With Temperature: 0.5 µV/°C Typ
  • Rail-to-Rail Output Swing
  • Low Input Bias Current:
    1 pA Typ at TA = 25°C
  • Common-Mode Input Voltage Range
    Includes the Negative Rail
  • Fully Specified For Both Single-Supply and
    Split-Supply Operation

LinCMOS is a trademark of Texas Instruments.
Parts, PSpice are trademarks of MicroSim Corporation.

The TLC2201 is a precision, low-noise operational amplifier using Texas Instruments Advanced LinCMOS process. This device combines the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.

The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.

The device inputs and outputs are designed to withstand −100-mA surge currents without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the parametric performance.

The TLC2201 is characterized for operation over the full military temperature range of −55°C to 125°C.

The TLC2201 is a precision, low-noise operational amplifier using Texas Instruments Advanced LinCMOS process. This device combines the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.

The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.

The device inputs and outputs are designed to withstand −100-mA surge currents without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the parametric performance.

The TLC2201 is characterized for operation over the full military temperature range of −55°C to 125°C.
filter 기타 정밀 연산 증폭기(Vos<1mV) 찾기
다운로드

기술 자료

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* Data sheet TLC2201-SP Class-V Advanced LinCMOS Low-Noise Precision Operational Amp datasheet 2011/02/11

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

지원 및 교육

TI 엔지니어의 기술 지원을 받을 수 있는 TI E2E™ 포럼

포럼 주제 모두 보기(영문)

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