TLE2037A

활성

Excalibur 저잡음 고속 정밀 비보상 연산 증폭기

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OPA37 활성 초저잡음(4.5nV/√Hz), 100µV 오프셋, 비보상 정밀 연산 증폭기 Next generation decompensated device with relaxed DC precision, improved AC performance, and better efficiency

제품 상세 정보

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 38 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 8 Vos (offset voltage at 25°C) (max) (mV) 0.025 Offset drift (typ) (µV/°C) 0.4 Input bias current (max) (pA) 90000 GBW (typ) (MHz) 50 Features Decompensated Slew rate (typ) (V/µs) 7.5 Rail-to-rail No Iq per channel (typ) (mA) 3.8 Vn at 1 kHz (typ) (nV√Hz) 7.5 CMRR (typ) (dB) 131 Rating Automotive Operating temperature range (°C) -55 to 125 Iout (typ) (A) 0.05 Architecture Bipolar Input common mode headroom (to negative supply) (typ) (V) 2 Input common mode headroom (to positive supply) (typ) (V) -2 Output swing headroom (to negative supply) (typ) (V) 1.5 Output swing headroom (to positive supply) (typ) (V) -1.8 THD + N at 1 kHz (typ) (%) 0.002
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 38 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 8 Vos (offset voltage at 25°C) (max) (mV) 0.025 Offset drift (typ) (µV/°C) 0.4 Input bias current (max) (pA) 90000 GBW (typ) (MHz) 50 Features Decompensated Slew rate (typ) (V/µs) 7.5 Rail-to-rail No Iq per channel (typ) (mA) 3.8 Vn at 1 kHz (typ) (nV√Hz) 7.5 CMRR (typ) (dB) 131 Rating Automotive Operating temperature range (°C) -55 to 125 Iout (typ) (A) 0.05 Architecture Bipolar Input common mode headroom (to negative supply) (typ) (V) 2 Input common mode headroom (to positive supply) (typ) (V) -2 Output swing headroom (to negative supply) (typ) (V) 1.5 Output swing headroom (to positive supply) (typ) (V) -1.8 THD + N at 1 kHz (typ) (%) 0.002
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Outstanding Combination of dc Precision and AC Performance:
    • Unity-Gain Bandwidth . . . 15 MHz Typ
    • Vn . . . . .
      • 3.3 nV/Hz at f = 10 Hz Typ,
      • 2.5 nV/Hz at f = 1 kHz Typ
    • VIO . . . . 25 µV Max
    • AVD . . . . 45 V/µV Typ With RL = 2 k,
    • 19 V/µV Typ With RL = 600
  • Available in Standard-Pinout Small-Outline Package
  • Output Features Saturation Recovery Circuitry
  • Macromodels and Statistical information

All trademarks are the property of their respective owners.

  • Outstanding Combination of dc Precision and AC Performance:
    • Unity-Gain Bandwidth . . . 15 MHz Typ
    • Vn . . . . .
      • 3.3 nV/Hz at f = 10 Hz Typ,
      • 2.5 nV/Hz at f = 1 kHz Typ
    • VIO . . . . 25 µV Max
    • AVD . . . . 45 V/µV Typ With RL = 2 k,
    • 19 V/µV Typ With RL = 600
  • Available in Standard-Pinout Small-Outline Package
  • Output Features Saturation Recovery Circuitry
  • Macromodels and Statistical information

All trademarks are the property of their respective owners.

The TLE20x7 and TLE20x7A contain innovative circuit design expertise and high-quality process control techniques to produce a level of ac performance and dc precision previously unavailable in single operational amplifiers. Manufactured using Texas Instruments state-of-the-art Excalibur process, these devices allow upgrades to systems that use lower-precision devices.

In the area of dc precision, the TLE20x7 and TLE20x7A offer maximum offset voltages of 100 µV and 25 µV, respectively, common-mode rejection ratio of 131 dB (typ), supply voltage rejection ratio of 144 dB (typ), and dc gain of 45 V/µV (typ).

The ac performance of the TLE2027 and TLE2037 is highlighted by a typical unity-gain bandwidth specification of 15 MHz, 55° of phase margin, and noise voltage specifications of 3.3 nV/Hz and 2.5 nV/Hz at frequencies of 10 Hz and 1 kHz respectively. The TLE2037 and TLE2037A have been decompensated for faster slew rate (–7.5 V/µs, typical) and wider bandwidth (50 MHz). To ensure stability, the TLE2037 and TLE2037A should be operated with a closed-loop gain of 5 or greater.

Both the TLE20x7 and TLE20x7A are available in a wide variety of packages, including the industry-standard 8-pin small-outline version for high-density system applications. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 105°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

The TLE20x7 and TLE20x7A contain innovative circuit design expertise and high-quality process control techniques to produce a level of ac performance and dc precision previously unavailable in single operational amplifiers. Manufactured using Texas Instruments state-of-the-art Excalibur process, these devices allow upgrades to systems that use lower-precision devices.

In the area of dc precision, the TLE20x7 and TLE20x7A offer maximum offset voltages of 100 µV and 25 µV, respectively, common-mode rejection ratio of 131 dB (typ), supply voltage rejection ratio of 144 dB (typ), and dc gain of 45 V/µV (typ).

The ac performance of the TLE2027 and TLE2037 is highlighted by a typical unity-gain bandwidth specification of 15 MHz, 55° of phase margin, and noise voltage specifications of 3.3 nV/Hz and 2.5 nV/Hz at frequencies of 10 Hz and 1 kHz respectively. The TLE2037 and TLE2037A have been decompensated for faster slew rate (–7.5 V/µs, typical) and wider bandwidth (50 MHz). To ensure stability, the TLE2037 and TLE2037A should be operated with a closed-loop gain of 5 or greater.

Both the TLE20x7 and TLE20x7A are available in a wide variety of packages, including the industry-standard 8-pin small-outline version for high-density system applications. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 105°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

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* Data sheet Excalibur Low-Noise, High-Speed, Precision Operational Amplifiers datasheet (Rev. C) 2010/03/31

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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