홈 증폭기 연산 증폭기 (op amps) 범용 연산 증폭기
홈
증폭기
연산 증폭기 (op amps)
범용 연산 증폭기

TLE2161A

활성

싱글, 36V, 6.4MHz 연산 증폭기

지금 주문
데이터 시트

이 제품의 최신 버전이 있습니다

open-in-new 대안 비교
비교 대상 장치보다 업그레이드된 기능을 지원하는 드롭인 대체품
OPA991 활성 싱글, 40V, 4.5MHz, 저전력 연산 증폭기 Rail-to-rail I/O, wider supply voltage (2.7 V to 40 V), faster slew rate (21 V/μs), lower offset voltage (0.75 mV), lower noise (10.8 nV/√Hz), higher output current (75 mA)
TLV9361 활성 단일, 40V, 10.6MHz 레일 투 레일 출력 연산 증폭기 Wider supply voltage (4.5 V to 40 V), higher GBW (10.6 MHz), faster slew rate (25 V/μs), lower noise (8.5 nV/√Hz), higher output current (60 mA)

TLE2161A

활성
데이터 시트 지금 주문

제품 상세 정보

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 7 Rail-to-rail In to V+ GBW (typ) (MHz) 6.4 Slew rate (typ) (V/µs) 10 Vos (offset voltage at 25°C) (max) (mV) 1.5 Iq per channel (typ) (mA) 0.29 Vn at 1 kHz (typ) (nV√Hz) 40 Rating Catalog Operating temperature range (°C) 0 to 70 Offset drift (typ) (µV/°C) 6 Features Decompensated Input bias current (max) (pA) 60 CMRR (typ) (dB) 90 Iout (typ) (A) 0.05 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 1 Output swing headroom (to negative supply) (typ) (V) 0.3 Output swing headroom (to positive supply) (typ) (V) -0.3
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 7 Rail-to-rail In to V+ GBW (typ) (MHz) 6.4 Slew rate (typ) (V/µs) 10 Vos (offset voltage at 25°C) (max) (mV) 1.5 Iq per channel (typ) (mA) 0.29 Vn at 1 kHz (typ) (nV√Hz) 40 Rating Catalog Operating temperature range (°C) 0 to 70 Offset drift (typ) (µV/°C) 6 Features Decompensated Input bias current (max) (pA) 60 CMRR (typ) (dB) 90 Iout (typ) (A) 0.05 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 1 Output swing headroom (to negative supply) (typ) (V) 0.3 Output swing headroom (to positive supply) (typ) (V) -0.3
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Excellent Output Drive Capability
    VO = ± 2.5 V Min at RL = 100 ,
    VCC± = ± 5 V
    VO = ± 12.5 V Min at RL = 600 ,
    VCC± = ± 15 V
  • Low Supply Current...280 uA Typ
  • Decompensated for High Slew Rate and
    Gain-Bandwidth Product
    AVD = 0.5 Min
    Slew Rate = 10 V/us Typ
    Gain-Bandwidth Product = 6.5 MHz Typ
  • Wide Operating Supply Voltage Range
    VCC ± = ± 3.5 V to ± 18 V
  • High Open-Loop Gain...280 V/mV Typ
  • Low Offset Voltage...500 uV Max
  • Low Offset Voltage Drift With Time
    0.04 uV/Month Typ
  • Low Input Bias Current...5 pA Typ

TLE2161, TLE2161A, TLE2161B
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE
u POWER OPERATIONAL AMPLIFIERS



SLOS049D - NOVEMBER 1989 - REVISED MAY 1996
  • Excellent Output Drive Capability
    VO = ± 2.5 V Min at RL = 100 ,
    VCC± = ± 5 V
    VO = ± 12.5 V Min at RL = 600 ,
    VCC± = ± 15 V
  • Low Supply Current...280 uA Typ
  • Decompensated for High Slew Rate and
    Gain-Bandwidth Product
    AVD = 0.5 Min
    Slew Rate = 10 V/us Typ
    Gain-Bandwidth Product = 6.5 MHz Typ
  • Wide Operating Supply Voltage Range
    VCC ± = ± 3.5 V to ± 18 V
  • High Open-Loop Gain...280 V/mV Typ
  • Low Offset Voltage...500 uV Max
  • Low Offset Voltage Drift With Time
    0.04 uV/Month Typ
  • Low Input Bias Current...5 pA Typ

TLE2161, TLE2161A, TLE2161B
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE
u POWER OPERATIONAL AMPLIFIERS



SLOS049D - NOVEMBER 1989 - REVISED MAY 1996

The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.

In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.

The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).

A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.

The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.

In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.

The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).

A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.

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* Data sheet Excalibur JFET-Input High-Output-Drive Micro Power Operational Amplifiers datasheet (Rev. D) 1996/05/01

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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