TXS4555

활성

레벨 변환기를 갖춘 SIM 카드 전원 공급 장치

제품 상세 정보

Technology family TXS Applications SIM Card Rating Catalog Operating temperature range (°C) -40 to 85
Technology family TXS Applications SIM Card Rating Catalog Operating temperature range (°C) -40 to 85
UQFN (RUT) 12 3.4 mm² 2 x 1.7 VQFN (RGT) 16 9 mm² 3 x 3
  • Level Translator
    • VCC Range of 1.65 V to 3.3 V
    • VBATT Range from 2.3 to 5.5V
  • Low-Dropout (LDO) Regulator
    • 50-mA LDO Regulator With Enable
    • 1.8-V or 2.95-V Selectable Output Voltage
    • 2.3-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 100mV (Max) at 50mA
  • Incorporates Shutdown Feature for the SIM Card Signals According to ISO-7816-3
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-B)
    • 500-V Charged-Device Model (C101)
    • 8kV HBM for SIM Pins
  • Package
    • 16-Pin QFN (3 mm x 3 mm)
    • 12-Pin QFN (2mm x 1.7mm)

  • Level Translator
    • VCC Range of 1.65 V to 3.3 V
    • VBATT Range from 2.3 to 5.5V
  • Low-Dropout (LDO) Regulator
    • 50-mA LDO Regulator With Enable
    • 1.8-V or 2.95-V Selectable Output Voltage
    • 2.3-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 100mV (Max) at 50mA
  • Incorporates Shutdown Feature for the SIM Card Signals According to ISO-7816-3
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-B)
    • 500-V Charged-Device Model (C101)
    • 8kV HBM for SIM Pins
  • Package
    • 16-Pin QFN (3 mm x 3 mm)
    • 12-Pin QFN (2mm x 1.7mm)

The TXS4555 is a complete Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with a SIM card to store I/O for mobile handset applications. The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces, a low-dropout (LDO) voltage regulator that has output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces.

Note: The Exposed center thermal pad must be connected to Ground

The device has two supply voltage pins. VCC can be operated over the full range of 1.65 V to 3.3 V and VBATT from 2.3 to 5.5 V. VPWR is set to either 1.8 V or 2.95 V and is supplied by an internal LDO. The integrated LDO accepts input voltages as high as 5.5 V and outputs either 1.8 V or 2.95 V at 50 mA to the B-side circuitry and to the external SIM card. The TXS4555 enables system designers to easily interface low-voltage microprocessors to SIM cards operating at 1.8 V or 2.95 V.

The TXS4555 also incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification for SIM cards. Proper shutdown of the SIM card signals helps in prevention of corruption of data during accidental shutdown of the phone. The device also has 8kV HBM protection for the SIM pins and standard 2kV HBM protection for all the other pins.

The TXS4555 is a complete Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with a SIM card to store I/O for mobile handset applications. The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces, a low-dropout (LDO) voltage regulator that has output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces.

Note: The Exposed center thermal pad must be connected to Ground

The device has two supply voltage pins. VCC can be operated over the full range of 1.65 V to 3.3 V and VBATT from 2.3 to 5.5 V. VPWR is set to either 1.8 V or 2.95 V and is supplied by an internal LDO. The integrated LDO accepts input voltages as high as 5.5 V and outputs either 1.8 V or 2.95 V at 50 mA to the B-side circuitry and to the external SIM card. The TXS4555 enables system designers to easily interface low-voltage microprocessors to SIM cards operating at 1.8 V or 2.95 V.

The TXS4555 also incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification for SIM cards. Proper shutdown of the SIM card signals helps in prevention of corruption of data during accidental shutdown of the phone. The device also has 8kV HBM protection for the SIM pins and standard 2kV HBM protection for all the other pins.

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기술 자료

star =TI에서 선정한 이 제품의 인기 문서
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4개 모두 보기
유형 직함 날짜
* Data sheet 1.8V/3V SIM CARD POWER SUPPLY WITH LEVEL TRANSLATOR datasheet (Rev. B) 2013/08/27
Application note Schematic Checklist - A Guide to Designing with Auto-Bidirectional Translators PDF | HTML 2024/07/12
Application note Understanding Transient Drive Strength vs. DC Drive Strength in Level-Shifters (Rev. A) PDF | HTML 2024/07/03
Selection guide Voltage Translation Buying Guide (Rev. A) 2021/04/15

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

시뮬레이션 모델

TXS4555 IBIS Model

SBOM452.ZIP (47 KB) - IBIS Model
패키지 CAD 기호, 풋프린트 및 3D 모델
UQFN (RUT) 12 Ultra Librarian
VQFN (RGT) 16 Ultra Librarian

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

지원 및 교육

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