UCC21737-Q1
- 5.7kVRMS single channel isolated gate driver
- AEC-Q100 Qualified with the following results:
- Device temperature grade 1: -40°C to +125°C ambient operating temperature range
- Functional Safety Quality-Managed
- SiC MOSFETs and IGBTs up to 2121Vpk
- 33V maximum output drive voltage (VDD-VEE)
- ±10A drive strength and split output
- 150V/ns minimum CMTI
- 270ns response time fast overcurrent protection
- External active Miller clamp
- 900mA soft turn-off when fault happens
- ASC input on isolated side to turn on power switch during system fault
- Alarm FLT on overcurrent and reset from RST/EN
- Fast enable/disable response on RST/EN
- Rejects <40ns noise transient and pulse on input pins
- 12V VDD UVLO and –3V VEE UVLO with power good on RDY
- Inputs/outputs with over/under-shoot transient voltage immunity up to 5V
- 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
- SOIC-16 DW package with creepage and clearance distance > 8mm
- Operating junction temperature –40°C to 150°C
The UCC21737-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The device has up to ±10A peak source and sink currents.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common-mode transient immunity (CMTI).
The UCC21737-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The ASC feature can be utilized to force ON power switch during system failure events, further increasing the drivers versatility and simplifying the system design effort, size, and cost.
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기술 자료
유형 | 직함 | 날짜 | ||
---|---|---|---|---|
* | Data sheet | UCC21737-Q1 Automotive 10A Source and Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection and High-CMTI datasheet (Rev. C) | PDF | HTML | 2024/06/17 |
Application brief | Does My Design Need a Miller Clamp? | PDF | HTML | 2024/12/11 | |
Application note | Choosing Appropriate Protection Approach for IGBT and SiC Power Modules | PDF | HTML | 2024/07/19 | |
Certificate | UCC217xx/-Q1 CQC Certificate of Product Certification | 2023/06/07 |
설계 및 개발
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패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
---|---|---|
SOIC (DW) | 16 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치
권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.