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UCC27624

ACTIVE

5A/5A dual-channel gate driver with 4V UVLO, 30V VDD and low propagation delay

Product details

Number of channels 2 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 26 Features Enable pin Operating temperature range (°C) -40 to 150 Rise time (ns) 6 Fall time (ns) 10 Propagation delay time (µs) 0.017 Input threshold CMOS, TTL Channel input logic Dual, Non-Inverting Input negative voltage (V) -10 Rating Catalog Undervoltage lockout (typ) (V) 4 Driver configuration Dual, Non-Inverting
Number of channels 2 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 26 Features Enable pin Operating temperature range (°C) -40 to 150 Rise time (ns) 6 Fall time (ns) 10 Propagation delay time (µs) 0.017 Input threshold CMOS, TTL Channel input logic Dual, Non-Inverting Input negative voltage (V) -10 Rating Catalog Undervoltage lockout (typ) (V) 4 Driver configuration Dual, Non-Inverting
HVSSOP (DGN) 8 14.7 mm² 3 x 4.9 SOIC (D) 8 29.4 mm² 4.9 x 6
  • Typical 5A peak source and sink drive current for each channel
  • Input and enable pins capable of handling –10V
  • Output capable of handling –2V transients
  • Absolute maximum VDD voltage: 30V
  • Wide VDD operating range from 4.5V to 26V with UVLO
  • Two independent gate drive channels
  • Independent enable function for each output
  • Hysteretic-logic thresholds for high noise immunity
  • VDD independent input thresholds (TTL compatible)
  • Fast propagation delays (17ns typical)
  • Fast rise and fall times (6ns and 10ns typical)
  • 1ns typical delay matching between the two channels
  • Two channels can be paralleled for higher drive current
  • SOIC8 and VSSOP8 PowerPAD™ package options
  • Operating junction temperature range of –40°C to 150°C
  • Typical 5A peak source and sink drive current for each channel
  • Input and enable pins capable of handling –10V
  • Output capable of handling –2V transients
  • Absolute maximum VDD voltage: 30V
  • Wide VDD operating range from 4.5V to 26V with UVLO
  • Two independent gate drive channels
  • Independent enable function for each output
  • Hysteretic-logic thresholds for high noise immunity
  • VDD independent input thresholds (TTL compatible)
  • Fast propagation delays (17ns typical)
  • Fast rise and fall times (6ns and 10ns typical)
  • 1ns typical delay matching between the two channels
  • Two channels can be paralleled for higher drive current
  • SOIC8 and VSSOP8 PowerPAD™ package options
  • Operating junction temperature range of –40°C to 150°C

The UCC27624 is a dual-channel, high-speed, low-side gate driver that effectively drives MOSFET, IGBT, SiC, and GaN power switches. UCC27624 has a typical peak drive strength of 5A, which reduces rise and fall times of the power switches, lowers switching losses, and increases efficiency. The device’s fast propagation delay (17ns typical) yields better power stage efficiency by improving the deadtime optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27624 can handle –10V at its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independently of main control logic. In the event of a system fault, the gate driver can quickly shut-off by pulling enable low. Many high-frequency switching power supplies exhibit noise at the gate of the power device, which can get injected into the output pin on the gate driver and can cause the driver to malfunction. The device’s transient reverse current and reverse voltage capability allow it to tolerate noise on the gate of the power device or pulse-transformer and avoid driver malfunction.

The UCC27624 also features undervoltage lockout (UVLO) for improved system robustness. When there is not enough bias voltage to fully enhance the power device, the gate driver output is held low by the strong internal pull down MOSFET.

The UCC27624 is a dual-channel, high-speed, low-side gate driver that effectively drives MOSFET, IGBT, SiC, and GaN power switches. UCC27624 has a typical peak drive strength of 5A, which reduces rise and fall times of the power switches, lowers switching losses, and increases efficiency. The device’s fast propagation delay (17ns typical) yields better power stage efficiency by improving the deadtime optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27624 can handle –10V at its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independently of main control logic. In the event of a system fault, the gate driver can quickly shut-off by pulling enable low. Many high-frequency switching power supplies exhibit noise at the gate of the power device, which can get injected into the output pin on the gate driver and can cause the driver to malfunction. The device’s transient reverse current and reverse voltage capability allow it to tolerate noise on the gate of the power device or pulse-transformer and avoid driver malfunction.

The UCC27624 also features undervoltage lockout (UVLO) for improved system robustness. When there is not enough bias voltage to fully enhance the power device, the gate driver output is held low by the strong internal pull down MOSFET.

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Technical documentation

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Type Title Date
* Data sheet UCC27624 30V, 5A, Dual-Channel, Low-Side Gate Driver with –10V Input Capability datasheet (Rev. D) PDF | HTML 30 May 2024
Application note Selecting Gate Drivers for HVAC Systems PDF | HTML 04 Apr 2024
Application note Why use a Gate Drive Transformer? PDF | HTML 04 Mar 2024
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 22 Jan 2024
Technical article Managing power-supply noise with a 30-V gate driver PDF | HTML 07 Dec 2021
Application note Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver PDF | HTML 10 Nov 2021

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