BQ500101
- 98% System Efficiency at 5 A
- Max Rated Continuous Current 10 A, Peak 15 A
- High-Frequency Operation (up to 600 kHz)
- High-Density SON 3.5 × 4.5 mm Footprint
- Ultra-Low Inductance Package
- System Optimized PCB Footprint
- 3.3-V and 5-V PWM Signal Compatible
- Input Voltages up to 24 V
- Integrated Bootstrap Diode
- Shoot-Through Protection
- RoHS Compliant – Lead Free Terminal Plating
- Halogen Free
- Optimized Power Stage Containing High-
Efficiency Gate Drivers and FETs - Optimized for 15-W Wireless Power Transmitter Designs
The bq500101 NexFET Power Stage is optimized for wireless power applications covering the WPC v1.2 medium power specification. The device can be used for both the rail voltage control in fixed frequency transmitter types as well as the coil drivers for both fixed and variable frequency types. This combination produces a high-current, high-efficiency, and high-speed switching device in a small 3.5 × 4.5 mm outline package. In addition, the PCB footprint is optimized to help reduce design time and simplify the completion of the overall system design.
技術文件
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檢視所有 2 類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | bq500101 NexFET Power Stage datasheet | PDF | HTML | 2016年 3月 3日 |
EVM User's guide | bq501210 bqTESLA™ Wireless Power TX EVM | 2016年 6月 9日 |
設計與開發
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封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
VSON-CLIP (DPC) | 8 | Ultra Librarian |
訂購與品質
內含資訊:
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
內含資訊:
- 晶圓廠位置
- 組裝地點