產品詳細資料

Rating Automotive Architecture Gate driver Vs (min) (V) 8 Operating temperature range (°C) -40 to 125
Rating Automotive Architecture Gate driver Vs (min) (V) 8 Operating temperature range (°C) -40 to 125
VSSOP (DGS) 20 24.99 mm² 5.1 x 4.9
  • Drives two N-channel MOSFETs in half-bridge configuration
    • High-side MOSFET source/drain up to 102V (absolute max)
    • 8V (5V DRV8162L) to 20V gate drive power supply
    • Integrated bootstrap diode
  • Functional Safety Quality-Managed
    • Documentation available to aid functional safety system design
  • Supports 100% PWM duty cycle with an integrated trickle charge pump
  • 16-level gate drive peak current
    • 16mA - 1000mA source current
    • 32mA - 2000mA sink current
    • Source-sink current ratio 1:1, 1:2, 1:3
  • Adjustable PWM dead time insertion 20ns - 900ns
  • Robust design for motor phase (SH) switching
    • Slew rate 50V/ns
    • Negative transient voltage -20V
    • 2-A strong gate pull down
  • Split gate drive supply inputs for redundant shutdown (DRV8162, DRV8162L)
  • Low-offset current sense amplifier (DRV8161)
    • Adjustable gain (5, 10, 20, 40 V/V)
  • Flexible PWM control interface; 2-pin PWM, 1-pin PWM, and independent PWM mode
  • 13-level VDS over current threshold
  • Independent shutdown pin (nDRVOFF)
  • Gate driver soft shutdown sequence
  • Integrated protection features
    • GVDD under voltage (GVDDUV)
    • Bootstrap under voltage (BST_UV)
    • MOSFET over current protection (VDS)
    • Shoot through protection
    • Thermal shutdown (OTSD)
    • Fault condition indicator (nFAULT)
  • Supports 3.3V, and 5V Logic Inputs
  • Drives two N-channel MOSFETs in half-bridge configuration
    • High-side MOSFET source/drain up to 102V (absolute max)
    • 8V (5V DRV8162L) to 20V gate drive power supply
    • Integrated bootstrap diode
  • Functional Safety Quality-Managed
    • Documentation available to aid functional safety system design
  • Supports 100% PWM duty cycle with an integrated trickle charge pump
  • 16-level gate drive peak current
    • 16mA - 1000mA source current
    • 32mA - 2000mA sink current
    • Source-sink current ratio 1:1, 1:2, 1:3
  • Adjustable PWM dead time insertion 20ns - 900ns
  • Robust design for motor phase (SH) switching
    • Slew rate 50V/ns
    • Negative transient voltage -20V
    • 2-A strong gate pull down
  • Split gate drive supply inputs for redundant shutdown (DRV8162, DRV8162L)
  • Low-offset current sense amplifier (DRV8161)
    • Adjustable gain (5, 10, 20, 40 V/V)
  • Flexible PWM control interface; 2-pin PWM, 1-pin PWM, and independent PWM mode
  • 13-level VDS over current threshold
  • Independent shutdown pin (nDRVOFF)
  • Gate driver soft shutdown sequence
  • Integrated protection features
    • GVDD under voltage (GVDDUV)
    • Bootstrap under voltage (BST_UV)
    • MOSFET over current protection (VDS)
    • Shoot through protection
    • Thermal shutdown (OTSD)
    • Fault condition indicator (nFAULT)
  • Supports 3.3V, and 5V Logic Inputs

The DRV816x devices are half-bridge gate drivers capable of driving high-side and low-side N-channel MOSFETs. The gate drive voltages are generated from the GVDD supply pin and the integrated bootstrap circuit is used to drive the high-side FET up to 102V drain. The Smart Gate Drive architecture supports 16-level (48 combination) gate drive peak current up to 1A source and 2A sink, and a built-in timing control of gate drive current. The devices can be used to drive various types of loads including brushless/brushed DC motors, PMSM, stepper motors, SRM, and solenoids.

Internal protection functions are provided for supply undervoltage, FET over-current, and die over temperature. The nFAULT pin indicates fault events detected by the protection features. The nDRVOFF pin initiates power stage shutdown independent from PWM control. The DRV8162 and DRV8162L devices offer split power supply architecture to assist safe torque off (STO) function.

Many device parameters including gate drive current, dead time, PWM control interface, and over current detection are configurable with a few passive components connected to device pins. An integrated low-side current sense amplifier (DRV8161) provides current measurement information back to the controller.

The DRV816x devices are half-bridge gate drivers capable of driving high-side and low-side N-channel MOSFETs. The gate drive voltages are generated from the GVDD supply pin and the integrated bootstrap circuit is used to drive the high-side FET up to 102V drain. The Smart Gate Drive architecture supports 16-level (48 combination) gate drive peak current up to 1A source and 2A sink, and a built-in timing control of gate drive current. The devices can be used to drive various types of loads including brushless/brushed DC motors, PMSM, stepper motors, SRM, and solenoids.

Internal protection functions are provided for supply undervoltage, FET over-current, and die over temperature. The nFAULT pin indicates fault events detected by the protection features. The nDRVOFF pin initiates power stage shutdown independent from PWM control. The DRV8162 and DRV8162L devices offer split power supply architecture to assist safe torque off (STO) function.

Many device parameters including gate drive current, dead time, PWM control interface, and over current detection are configurable with a few passive components connected to device pins. An integrated low-side current sense amplifier (DRV8161) provides current measurement information back to the controller.

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類型 標題 日期
* Data sheet DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier datasheet (Rev. B) PDF | HTML 2024年 12月 11日
Application note Relating Payload to Brushless DC Motor Driver Specifications PDF | HTML 2024年 12月 2日
Technical article 協作機器人到人形裝置:將系統效率與安全性推向更高功率的 機器人 PDF | HTML 2024年 12月 2日
Application note Three-Phase vs Three-Single Half-Bridge Gate Drivers PDF | HTML 2024年 11月 24日
Design guide 48V, 3.5kW Small Form-Factor Three-Phase Inverter Reference Design for Integrated Motor Drives (Rev. A) PDF | HTML 2024年 11月 8日

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DRV8161EVM — DRV8161 評估模組

DRV8161 評估模組 (EVM) 是一款 30A 三相無刷 DC 驅動級,使用三個用於旋轉 BLDC 馬達的 DRV8161 閘極驅動器。此 EVM 可快速評估 DRV8161 產品,其會利用梯形整流和控制轉動 BLDC 馬達。
使用指南: PDF | HTML
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參考設計

TIDA-010956 — 適用於整合式馬達驅動的 48V、4kW 小型三相位逆變器參考設計

此參考設計展示了額定 48V DC 輸入和 85Arms 輸出電流額定值的三相位逆變器。100V 智慧型半橋閘極驅動器 DRV8162L 可實現小尺寸、穩健且高效率的功率級。建議的多通道關機路徑使用 RV8162L 分離式電源供應架構,以實現安全扭矩關閉 (STO) 功能。利用 DRV8162L 的內部 VDS 監控器和保護功能,即可保護功率級免受擊穿或輸出短路的過電流故障影響。使用 INA241A 實現精密的相位電流感測。設計提供 3.3V I/O 介面,可連接 C2000™ MCU 等主機控制器,以快速且輕鬆地評估。
Design guide: PDF
參考設計

TIDA-01629 — 48V/500W 三相逆變器,具有用於伺服驅動器的智慧閘極驅動器參考設計

Efficiency, protection, and integration are important design factors for compact DC-fed drives up to 60VDC. This reference design shows a three-phase inverter with nominal 48-V DC input and a 10-ARMS output current.  The 100-V intelligent three-phase gate driver DRV8350R with integrated buck (...)
Design guide: PDF
電路圖: PDF
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VSSOP (DGS) 20 Ultra Librarian

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