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ESD451

現行

採用 0201 封裝的 0.5-pF、5.5-V、30-KV 雙向 ESD 防護裝置

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產品規格表

ESD451

現行
產品規格表 立即訂購

產品詳細資料

Package name DFN-0603 (X2SON) Peak pulse power (8/20 μs) (max) (W) 57 Vrwm (V) 5.5 Bi-/uni-directional Bi-directional Number of channels 1 IO capacitance (typ) (pF) 0.5 IEC 61000-4-2 contact (±V) 30000 IEC 61000-4-5 (A) 6 Features ESD Protection Clamping voltage (V) 10.4 Dynamic resistance (typ) 0.19 Interface type HDMI 1.4, HDMI 2.0, Memory/SIM Card, USB 3.0 Breakdown voltage (min) (V) 7 IO leakage current (max) (nA) 50 Rating Catalog Operating temperature range (°C) -40 to 125
Package name DFN-0603 (X2SON) Peak pulse power (8/20 μs) (max) (W) 57 Vrwm (V) 5.5 Bi-/uni-directional Bi-directional Number of channels 1 IO capacitance (typ) (pF) 0.5 IEC 61000-4-2 contact (±V) 30000 IEC 61000-4-5 (A) 6 Features ESD Protection Clamping voltage (V) 10.4 Dynamic resistance (typ) 0.19 Interface type HDMI 1.4, HDMI 2.0, Memory/SIM Card, USB 3.0 Breakdown voltage (min) (V) 7 IO leakage current (max) (nA) 50 Rating Catalog Operating temperature range (°C) -40 to 125
X2SON (DPL) 2 0.18 mm² 0.6 x 0.3
  • IEC 61000-4-2 level 4 ESD protection:
    • ±30 kV contact discharge
    • ±30 kV air gap discharge
  • IEC 61000-4-5 surge protection:
    • 6.2 A (8/20 µs)
  • IO capacitance:
    • 0.5 pF (typical)
  • DC breakdown voltage: ±8 V (typical)
  • Ultra low leakage current: 50 nA (maximum)
  • Extremely low ESD clamping voltage
    • 10.4 V at 16 A TLP
    • R DYN: 0.19 Ω
  • Low insertion loss: 3.5 GHz (-3 dB bandwidth)
  • Supports high speed interfaces up to 7 Gbps
  • Industrial temperature range: –55°C to +150°C
  • Space-saving industry standard 0201 footprint (0.6 mm × 0.3 mm × 0.3 mm)
  • IEC 61000-4-2 level 4 ESD protection:
    • ±30 kV contact discharge
    • ±30 kV air gap discharge
  • IEC 61000-4-5 surge protection:
    • 6.2 A (8/20 µs)
  • IO capacitance:
    • 0.5 pF (typical)
  • DC breakdown voltage: ±8 V (typical)
  • Ultra low leakage current: 50 nA (maximum)
  • Extremely low ESD clamping voltage
    • 10.4 V at 16 A TLP
    • R DYN: 0.19 Ω
  • Low insertion loss: 3.5 GHz (-3 dB bandwidth)
  • Supports high speed interfaces up to 7 Gbps
  • Industrial temperature range: –55°C to +150°C
  • Space-saving industry standard 0201 footprint (0.6 mm × 0.3 mm × 0.3 mm)

The ESD451 is a bidirectional ESD protection diode for protecting data line and other I/O ports. The ESD451 is rated to dissipate ESD strikes up to ±30 kV per the IEC 61000-4-2 international standard (greater than Level 4).

This device features a 0.5 pF (typical) IO capacitance enabling high-speed interface protection for protocols such as USB 3.0. The extremely low dynamic resistance (0.19 Ω) and clamping voltage (10.4 V at 16 A TLP) is specified for system-level protection against transient events.

The ±30 kV ESD rating and 6.2 A surge provides robust transient protection in a tiny package for protecting 5.5 V power rails and data lines in portable electronics and other space constrained applications such as wearables.

The ESD451 is offered in the industry standard 0201 (DPL) package.

The ESD451 is a bidirectional ESD protection diode for protecting data line and other I/O ports. The ESD451 is rated to dissipate ESD strikes up to ±30 kV per the IEC 61000-4-2 international standard (greater than Level 4).

This device features a 0.5 pF (typical) IO capacitance enabling high-speed interface protection for protocols such as USB 3.0. The extremely low dynamic resistance (0.19 Ω) and clamping voltage (10.4 V at 16 A TLP) is specified for system-level protection against transient events.

The ±30 kV ESD rating and 6.2 A surge provides robust transient protection in a tiny package for protecting 5.5 V power rails and data lines in portable electronics and other space constrained applications such as wearables.

The ESD451 is offered in the industry standard 0201 (DPL) package.
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* Data sheet ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package datasheet (Rev. A) PDF | HTML 2023年 6月 16日
Application note ESD Packaging and Layout Guide (Rev. B) PDF | HTML 2022年 8月 18日

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