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SN74CB3Q3305

現行

3.3-V、1:1 (SPST)、2 通道 FET 匯流排開關 (高電位作動)

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產品規格表

SN74CB3Q3305

現行
產品規格表 立即訂購

產品詳細資料

Configuration 1:1 SPST Number of channels 2 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog, I2C, UART Ron (typ) (Ω) 3 CON (typ) (pF) 8 Supply current (typ) (µA) 250 Bandwidth (MHz) 500 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Supports input voltage beyond supply Input/output continuous current (max) (mA) 64 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
Configuration 1:1 SPST Number of channels 2 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog, I2C, UART Ron (typ) (Ω) 3 CON (typ) (pF) 8 Supply current (typ) (µA) 250 Bandwidth (MHz) 500 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Supports input voltage beyond supply Input/output continuous current (max) (mA) 64 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
TSSOP (PW) 8 19.2 mm² 3 x 6.4 VSSOP (DCU) 8 6.2 mm² 2 x 3.1
  • High-bandwidth data path (up to 500 MHz)(1)
  • 5-V tolerant I/Os with device powered up or powered down
  • Low and flat ON-state resistance (ron) characteristics over operating range (ron = 3 Ω typical)
  • Supports input voltage beyond supply on data I/O ports
    • 0 to 5 V switching with 3.3 V VCC
    • 0 to 3.3 V switching with 2.5 V VCC
  • Bidirectional data flow with near-zero propagation delay
  • Low input or output capacitance minimizes loading and signal distortion (Cio(OFF) = 3.5 pF typical)
  • Fast switching frequency (fOE = 20 MHz maximum)
  • Data and control inputs provide undershoot clamp diodes
  • Low power consumption (ICC = 0.25 mA typical)
  • VCC operating range from 2.3 V to 3.6 V
  • Data I/Os support 0 to 5 V signaling levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, and 5 V)
  • Control inputs can be driven by TTL or 5 V/3.3 V CMOS outputs
  • Ioff supports partial-power-down mode operation
  • Latch-up performance exceeds 100 mA per JESD 78, Class II

(1)For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, SCDA008.
  • High-bandwidth data path (up to 500 MHz)(1)
  • 5-V tolerant I/Os with device powered up or powered down
  • Low and flat ON-state resistance (ron) characteristics over operating range (ron = 3 Ω typical)
  • Supports input voltage beyond supply on data I/O ports
    • 0 to 5 V switching with 3.3 V VCC
    • 0 to 3.3 V switching with 2.5 V VCC
  • Bidirectional data flow with near-zero propagation delay
  • Low input or output capacitance minimizes loading and signal distortion (Cio(OFF) = 3.5 pF typical)
  • Fast switching frequency (fOE = 20 MHz maximum)
  • Data and control inputs provide undershoot clamp diodes
  • Low power consumption (ICC = 0.25 mA typical)
  • VCC operating range from 2.3 V to 3.6 V
  • Data I/Os support 0 to 5 V signaling levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, and 5 V)
  • Control inputs can be driven by TTL or 5 V/3.3 V CMOS outputs
  • Ioff supports partial-power-down mode operation
  • Latch-up performance exceeds 100 mA per JESD 78, Class II

(1)For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, SCDA008.

The SN74CB3Q3305 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports switching input voltage beyond the supply on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3305 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

The SN74CB3Q3305 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports switching input voltage beyond the supply on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3305 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.
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類型 標題 日期
* Data sheet SN74CB3Q3305 Dual FET Bus Switch 2.5-V or 3.3-V Low-Voltage High-Bandwidth Bus Switch datasheet (Rev. D) PDF | HTML 2021年 9月 15日
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 2022年 6月 2日
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 2021年 12月 1日
Application note CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) PDF | HTML 2021年 11月 19日
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 2021年 1月 6日
Selection guide Logic Guide (Rev. AB) 2017年 6月 12日
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
User guide LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
More literature Digital Bus Switch Selection Guide (Rev. A) 2004年 11月 10日
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
User guide Signal Switch Data Book (Rev. A) 2003年 11月 14日
Application note Bus FET Switch Solutions for Live Insertion Applications 2003年 2月 7日

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DIP-ADAPTER-EVM — DIP 轉接器評估模組

Speed up your op amp prototyping and testing with the DIP-Adapter-EVM, which provides a fast, easy and inexpensive way to interface with small, surface-mount ICs. You can connect any supported op amp using the included Samtec terminal strips or wire them directly to existing circuits.

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LEADED-ADAPTER1 — 適用於快速測試 TI 的 5、8、10、16 及 24 針腳引線封裝的表面貼裝至 DIP 接頭適配器

The EVM-LEADED1 board allows for quick testing and bread boarding of TI's common leaded packages.  The board has footprints to convert TI's D, DBQ, DCT,DCU, DDF, DGS, DGV, and PW surface mount packages to 100mil DIP headers.     

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SN74CB3Q3305 IBIS Model

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