產品詳細資料

Configuration 1:1 SPST Number of channels 2 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog, I2C, UART Ron (typ) (Ω) 5 CON (typ) (pF) 8 Supply current (typ) (µA) 250 Bandwidth (MHz) 500 Operating temperature range (°C) -55 to 125 Features Powered-off protection, Supports input voltage beyond supply Input/output continuous current (max) (mA) 64 Rating HiRel Enhanced Product Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 1.3
Configuration 1:1 SPST Number of channels 2 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog, I2C, UART Ron (typ) (Ω) 5 CON (typ) (pF) 8 Supply current (typ) (µA) 250 Bandwidth (MHz) 500 Operating temperature range (°C) -55 to 125 Features Powered-off protection, Supports input voltage beyond supply Input/output continuous current (max) (mA) 64 Rating HiRel Enhanced Product Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 1.3
TSSOP (PW) 8 19.2 mm² 3 x 6.4
  • High-Bandwidth Data Path (up to 500 MHz(1))
  • 5-V-Tolerant I/Os With Device Powered Up or Powered Down
  • Low and Flat ON-State Resistance (ron)
    Characteristics Over Operating Range (ron = 4 Ω Typ)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0- to 5-V Switching With 3.3-V VCC
    • 0- to 3.3-V Switching With 2.5-V VCC
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes
    Loading and Signal Distortion
    (Cio(OFF) = 3.5 pF Typ)
  • Fast Switching Frequency (f OE  = 20 MHz Max)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 0.25 mA Typ)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0- to 5-V Signaling Levels
    (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or
    5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA
    Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface,
    Differential Signal Interface, Bus Isolation, Low-Distortion
    Signal Gating

SUPPORTS DEFENSE, AEROSPACE, AND MEDICAL APPLICATIONS

  • Controlled Baseline
  • One Assembly and Test Site
  • One Fabrication Site
  • Available in Military (–55°C to 125°C)
    Temperature Range
  • Extended Product Life Cycle
  • Extended Product-Change Notification
  • Product Traceability

(1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.

  • High-Bandwidth Data Path (up to 500 MHz(1))
  • 5-V-Tolerant I/Os With Device Powered Up or Powered Down
  • Low and Flat ON-State Resistance (ron)
    Characteristics Over Operating Range (ron = 4 Ω Typ)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0- to 5-V Switching With 3.3-V VCC
    • 0- to 3.3-V Switching With 2.5-V VCC
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes
    Loading and Signal Distortion
    (Cio(OFF) = 3.5 pF Typ)
  • Fast Switching Frequency (f OE  = 20 MHz Max)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 0.25 mA Typ)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0- to 5-V Signaling Levels
    (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or
    5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA
    Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface,
    Differential Signal Interface, Bus Isolation, Low-Distortion
    Signal Gating

SUPPORTS DEFENSE, AEROSPACE, AND MEDICAL APPLICATIONS

  • Controlled Baseline
  • One Assembly and Test Site
  • One Fabrication Site
  • Available in Military (–55°C to 125°C)
    Temperature Range
  • Extended Product Life Cycle
  • Extended Product-Change Notification
  • Product Traceability

(1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.

The SN74CB3Q3306A is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3306A provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3306A is organized as two 1-bit switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is low, the associated 1-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3Q3306A is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3306A provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3306A is organized as two 1-bit switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is low, the associated 1-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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類型 標題 日期
* Data sheet DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH datasheet 2013年 12月 17日
* VID SN74CB3Q3306A-EP VID V6214606 2016年 6月 21日
* Radiation & reliability report CCB3Q3306AMPWREP Reliability Report 2014年 12月 16日
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 2022年 6月 2日
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 2021年 12月 1日
Application note CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) PDF | HTML 2021年 11月 19日
Selection guide Logic Guide (Rev. AB) 2017年 6月 12日
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
User guide LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
More literature Digital Bus Switch Selection Guide (Rev. A) 2004年 11月 10日
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
User guide Signal Switch Data Book (Rev. A) 2003年 11月 14日
Application note Bus FET Switch Solutions for Live Insertion Applications 2003年 2月 7日

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DIP-ADAPTER-EVM — DIP 轉接器評估模組

Speed up your op amp prototyping and testing with the DIP-Adapter-EVM, which provides a fast, easy and inexpensive way to interface with small, surface-mount ICs. You can connect any supported op amp using the included Samtec terminal strips or wire them directly to existing circuits.

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