TL082B

現行

雙路、30-V、3-MHz、13-V/µs 電壓轉換率、3-mV 偏移電壓、輸入至 V+、JFET 輸入運算放大器

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TL082H 現行 具有操作溫度 -40°C 至 125°C 的雙路、40-V、5.25-MHz、4-mV 偏移電壓、20-V/µs、輸入至 V+ 運算放大器 Wider temperature range (-40°C to 125°C), lower quiescent current (0.0937 mA), wider voltage range (4.5 V to 40 V), and improved offset voltage drift

產品詳細資料

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 30 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 7 Rail-to-rail In to V+ GBW (typ) (MHz) 3 Slew rate (typ) (V/µs) 13 Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 1.4 Vn at 1 kHz (typ) (nV√Hz) 18 Rating Catalog Operating temperature range (°C) 0 to 70 Offset drift (typ) (µV/°C) 18 Features Standard Amps Input bias current (max) (pA) 200 CMRR (typ) (dB) 86 Iout (typ) (A) 0.01 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 0 Output swing headroom (to negative supply) (typ) (V) 1.5 Output swing headroom (to positive supply) (typ) (V) -1.5
Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 30 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 7 Rail-to-rail In to V+ GBW (typ) (MHz) 3 Slew rate (typ) (V/µs) 13 Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 1.4 Vn at 1 kHz (typ) (nV√Hz) 18 Rating Catalog Operating temperature range (°C) 0 to 70 Offset drift (typ) (µV/°C) 18 Features Standard Amps Input bias current (max) (pA) 200 CMRR (typ) (dB) 86 Iout (typ) (A) 0.01 Architecture FET Input common mode headroom (to negative supply) (typ) (V) 3 Input common mode headroom (to positive supply) (typ) (V) 0 Output swing headroom (to negative supply) (typ) (V) 1.5 Output swing headroom (to positive supply) (typ) (V) -1.5
PDIP (P) 8 92.5083 mm² 9.81 x 9.43 SOIC (D) 8 29.4 mm² 4.9 x 6
  • High slew rate: 20V/µs (TL08xH, typ)
  • Low offset voltage: 1mV (TL08xH, typ)
  • Low offset voltage drift: 2 µV/°C
  • Low power consumption: 940µA/ch (TL08xH, typ)
  • Wide common-mode and differential voltage ranges
    • Common-mode input voltage range includes VCC+
  • Low input bias and offset currents
  • Low noise: Vn = 18nV/√Hz (typ) at f = 1kHz
  • Output short-circuit protection
  • Low total harmonic distortion: 0.003% (typ)
  • Wide supply voltage: ±2.25V to ±20V, 4.5V to 40V
  • High slew rate: 20V/µs (TL08xH, typ)
  • Low offset voltage: 1mV (TL08xH, typ)
  • Low offset voltage drift: 2 µV/°C
  • Low power consumption: 940µA/ch (TL08xH, typ)
  • Wide common-mode and differential voltage ranges
    • Common-mode input voltage range includes VCC+
  • Low input bias and offset currents
  • Low noise: Vn = 18nV/√Hz (typ) at f = 1kHz
  • Output short-circuit protection
  • Low total harmonic distortion: 0.003% (typ)
  • Wide supply voltage: ±2.25V to ±20V, 4.5V to 40V

The TL08xH (TL081H, TL082H, and TL084H) family of devices are the next-generation versions of the industry-standard TL08x (TL081, TL082, and TL084) devices. These devices provide outstanding value for cost-sensitive applications, with features including low offset (1mV, typical), high slew rate (20V/µs), and common-mode input to the positive supply. High ESD (1.5kV, HBM), integrated EMI and RF filters, and operation across the full –40°C to 125°C enable the TL08xH devices to be used in the most rugged and demanding applications.

The TL08xH (TL081H, TL082H, and TL084H) family of devices are the next-generation versions of the industry-standard TL08x (TL081, TL082, and TL084) devices. These devices provide outstanding value for cost-sensitive applications, with features including low offset (1mV, typical), high slew rate (20V/µs), and common-mode input to the positive supply. High ESD (1.5kV, HBM), integrated EMI and RF filters, and operation across the full –40°C to 125°C enable the TL08xH devices to be used in the most rugged and demanding applications.

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類型 標題 日期
* Data sheet TL08xx FET-Input Operational Amplifiers datasheet (Rev. N) PDF | HTML 2024年 6月 11日
E-book The Signal e-book: A compendium of blog posts on op amp design topics 2017年 3月 28日

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