TLC081A

現行

單路、16-V、10-MHz、1.4-mV 偏移電壓、輸入至 V- 運算放大器

現在提供此產品的更新版本

open-in-new 比較替代產品
功能相同,但引腳輸出與所比較的裝置不同
TLV9161 現行 單路、16-V、11-MHz、軌對軌輸入/輸出、低偏移電壓、低雜訊運算放大器 Higher GBW (11 MHz), faster slew rate (33 V/us), lower offset voltage (1 mV), lower noise (6.8 nV/√Hz)

產品詳細資料

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Rail-to-rail In to V- GBW (typ) (MHz) 10 Slew rate (typ) (V/µs) 16 Vos (offset voltage at 25°C) (max) (mV) 1.4 Iq per channel (typ) (mA) 1.8 Vn at 1 kHz (typ) (nV√Hz) 8.5 Rating Catalog Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 1.2 Input bias current (max) (pA) 50 CMRR (typ) (dB) 110 Iout (typ) (A) 0.1 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) -1.5 Output swing headroom (to negative supply) (typ) (V) 0.18 Output swing headroom (to positive supply) (typ) (V) -0.7
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Rail-to-rail In to V- GBW (typ) (MHz) 10 Slew rate (typ) (V/µs) 16 Vos (offset voltage at 25°C) (max) (mV) 1.4 Iq per channel (typ) (mA) 1.8 Vn at 1 kHz (typ) (nV√Hz) 8.5 Rating Catalog Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 1.2 Input bias current (max) (pA) 50 CMRR (typ) (dB) 110 Iout (typ) (A) 0.1 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0 Input common mode headroom (to positive supply) (typ) (V) -1.5 Output swing headroom (to negative supply) (typ) (V) 0.18 Output swing headroom (to positive supply) (typ) (V) -0.7
PDIP (P) 8 92.5083 mm² 9.81 x 9.43 SOIC (D) 8 29.4 mm² 4.9 x 6
  • Wide Bandwidth: 10 MHz
  • High Output Drive:
    • IOH: 57 mA at VDD – 1.5 V
    • IOL: 55 mA at 0.5 V
  • High Slew Rate:
    • SR+: 16 V/µs
    • SR–: 19 V/µs
  • Wide Supply Range: 4.5 V to 16 V
  • Supply Current: 1.9 mA/Channel
  • Ultralow Power Shutdown Mode:
    • IDD: 125 µA/Channel
  • Low Input Noise Voltage: 8.5 nV√Hz
  • Input Offset Voltage: 60 µV
  • Ultra-Small Packages:
    • 8- or 10-Pin MSOP (TLC080/1/2/3)

PowerPAD is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.

  • Wide Bandwidth: 10 MHz
  • High Output Drive:
    • IOH: 57 mA at VDD – 1.5 V
    • IOL: 55 mA at 0.5 V
  • High Slew Rate:
    • SR+: 16 V/µs
    • SR–: 19 V/µs
  • Wide Supply Range: 4.5 V to 16 V
  • Supply Current: 1.9 mA/Channel
  • Ultralow Power Shutdown Mode:
    • IDD: 125 µA/Channel
  • Low Input Noise Voltage: 8.5 nV√Hz
  • Input Offset Voltage: 60 µV
  • Ultra-Small Packages:
    • 8- or 10-Pin MSOP (TLC080/1/2/3)

PowerPAD is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.

The first members of TI’s new BiMOS general-purpose operational amplifier family are the TLC08x. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher ac and dc performance. With performance rated from 4.5 V to 16 V across commercial (0°C to 70°C) and an extended industrial temperature range (–40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial, and instrumentation applications. Familiar features like offset nulling pins, and new features like MSOP PowerPAD™ packages and shutdown modes, enable higher levels of performance in a variety of applications.

Developed in TI’s patented LBC3 BiCMOS process, the new BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL08x BiFET predecessors include a bandwidth of 10 MHz (an increase of 300%) and voltage noise of 8.5 nV/√Hz (an improvement of 60%). DC improvements include an ensured VICR that includes ground, a factor of 4 reduction in input offset voltage down to 1.5 mV (maximum) in the standard grade, and a power supply rejection improvement of greater than 40 dB to 130 dB. Added to this list of impressive features is the ability to drive ±50-mA loads comfortably from an ultrasmall-footprint MSOP PowerPAD package, which positions the TLC08x as the ideal high-performance general-purpose operational amplifier family.

For the most current package and ordering information, see the Package Option Addendum at the end of this data sheet, or see the TI web site at www.ti.com.

The first members of TI’s new BiMOS general-purpose operational amplifier family are the TLC08x. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher ac and dc performance. With performance rated from 4.5 V to 16 V across commercial (0°C to 70°C) and an extended industrial temperature range (–40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial, and instrumentation applications. Familiar features like offset nulling pins, and new features like MSOP PowerPAD™ packages and shutdown modes, enable higher levels of performance in a variety of applications.

Developed in TI’s patented LBC3 BiCMOS process, the new BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL08x BiFET predecessors include a bandwidth of 10 MHz (an increase of 300%) and voltage noise of 8.5 nV/√Hz (an improvement of 60%). DC improvements include an ensured VICR that includes ground, a factor of 4 reduction in input offset voltage down to 1.5 mV (maximum) in the standard grade, and a power supply rejection improvement of greater than 40 dB to 130 dB. Added to this list of impressive features is the ability to drive ±50-mA loads comfortably from an ultrasmall-footprint MSOP PowerPAD package, which positions the TLC08x as the ideal high-performance general-purpose operational amplifier family.

For the most current package and ordering information, see the Package Option Addendum at the end of this data sheet, or see the TI web site at www.ti.com.

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類型 標題 日期
* Data sheet TLC080 - Family of Wide-Bandwidth High-Output-Drive Single Supply Op Amps datasheet (Rev. F) 2011年 12月 7日
E-book The Signal e-book: A compendium of blog posts on op amp design topics 2017年 3月 28日
Application note TLC08x and TLC08xA EMI Immunity Performance 2013年 8月 19日

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放大器性能開發套件 (PDK) 是一款評估模組 (EVM) 套件,可測試通用運算放大器 (op amp) 參數,並與大多數運算放大器和比較器相容。EVM 套件提供主板和多個插槽式子卡選項,可滿足封裝需求,使工程師能夠快速評估和驗證裝置性能。

AMP-PDK-EVM 套件支援五種最熱門的業界標準封裝,包括:

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設計工具

CIRCUIT060013 — 具有 T 網路回饋電路的反相放大器

此設計可反轉輸入訊號 VIN,並使用 1000 V/V 或 60 dB 訊號增益。具有 T 回饋網路的反相放大器可在沒有較小 R4 值或超大回饋電阻器值的情況下獲得高增益。
設計工具

CIRCUIT060015 — 可調式參考電壓電路

此電路結合反相及非反相放大器,讓參考電壓可從負輸入電壓向上調整至輸入電壓。可加入增益以提高最大負參考位準。
設計工具

CIRCUIT060074 — 具有比較器電路的高壓側電流感測

此高壓側電流感測解決方案使用一個具有軌對軌輸入共模範圍的比較器,若負載電流上升到 1 A 以上,便在比較器輸出 (COMP OUT) 建立過電流警示 (OC 警示) 訊號。此實作中的 OC 訊號為低電位作動。因此當超過 1-A 閾值時,比較器輸出會變低。實作磁滯後會在負載電流降低至 0.5 A (減少 50%) 時,讓 OC-Alert 返回邏輯高狀態。此電路利用開漏輸出比較器,為控制數位邏輯輸入針腳而進行電平轉換輸出高邏輯電平。對於需要驅動 MOSFET 開關閘極的應用,建議使用具推挽輸出的比較器。
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PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

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封裝 針腳 CAD 符號、佔位空間與 3D 模型
PDIP (P) 8 Ultra Librarian
SOIC (D) 8 Ultra Librarian

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