TLC27M4A
- Trimmed Offset Voltage:
TLC27M9...900 uV Max at TA = 25°C,
VDD = 5 V - Input Offset Voltage Drift...Typically
0.1 uV/Month, Including the First 30 Days - Wide Range of Supply Voltages Over Specified Temperature Range:
0°C to 70°C...3 V to 16 V
-40°C to 85°C...4 V to 16 V
-55°C to 125°C...4 V to 16 V - Single-Supply Operation
- Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix, I-Suffix Types)
- Low Noise...Typically 32 nV/
Hz\
at f = 1 kHz - Low Power...Typically 2.1 mW at TA=25°C, VDD = 5 V
- Output Voltage Range Includes Negative Rail
- High Input Impedance...1012
Typ
- ESD-Protection Circuitry
- Small-Outline Package Option Also Available in Tape and Reel
- Designed-In Latch-Up Immunity
The TLC27M4 and TLC27M9 quad operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds comparable to that of general-purpose bipolar devices.These devices use Texas Instruments silicon-gate LinCMOSTM
LinCMOS is a trademark of Texas Instruments Incorporated. technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.
The extremely high input impedance, low bias currents, make these cost-effective devices ideal for applications that have previously been reserved for general-purpose bipolar products, but with only a fraction of the power consumption.
Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27M4 (10 mV) to the high-precision TLC27M9 (900 uV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.
In general, many features associated with bipolar technology are available on LinCMOSTM operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC27M4 and TLC27M9. The devices also exhibit low voltage single-supply operation, and low power consumption, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.
A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density system applications.
The device inputs and outputs are designed to withstand -100-mA surge currents without sustaining latch-up.
The TLC27M4 and TLC27M9 incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015; however, care should be exercised in handling these devices, as exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.
TA
|
VIOmax AT 25°C |
PACKAGE
|
CHIP
FORM (Y) | |||||
---|---|---|---|---|---|---|---|---|
SMALL OUTLINE
(D) |
CHIP CARRIER
(FK) |
CERAMIC DIP
(J) |
PLASTIC DIP
(N) |
TSSOP
(PW) | ||||
0°C to 70°C
|
900 uV
|
TLC27M9CD
|
--
|
--
|
TLC27M9CN |
--
|
--
| |
2 mV
|
TLC27M4BCD
|
--
|
--
|
TLC27M4BCN
|
--
|
--
| ||
5 mV
|
TLC27M4ACD
|
--
|
--
|
TLC27M4ACN
|
--
|
--
| ||
10 mV
|
TLC27M4CD
|
--
|
--
|
TLC27M4CN |
TLC27M4CPW
|
TLC27M4Y
| ||
-40°C to 85°C
|
900 uV
|
TLC27M9ID
|
--
|
--
|
TLC27M9IN
|
--
|
--
| |
2 mV
|
TLC27M4BID
|
--
|
--
|
TLC27M4BIN
|
--
|
--
| ||
5 mV
|
TLC27M4AID
|
--
|
--
|
TLC27M4AIN
|
--
|
--
| ||
10 mV
|
TLC27M4ID
|
--
|
--
|
TLC27M4IN
|
TLC27M41PW
|
--
| ||
-55°C to 125°C
|
900 uV
|
TLC27M9MD
|
TLC27M9MFK
|
TLC27M9MJ
|
TLC27M9MN
|
--
|
--
| |
10 mV
|
TLC27M4MD
|
TLC27M4MFK
|
TLC27M4MJ
|
TLC27M4MN
|
--
|
--
|
The D and PW package is available taped and reeled. Add R suffix to the device type (e.g., TLC279CDR).
技術文件
類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | LinCMOS Precision Quad Op Amps datasheet (Rev. D) | 2012年 10月 11日 | |
E-book | The Signal e-book: A compendium of blog posts on op amp design topics | 2017年 3月 28日 |
設計與開發
如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。
AMP-PDK-EVM — 放大器性能開發套件評估模組
放大器性能開發套件 (PDK) 是一款評估模組 (EVM) 套件,可測試通用運算放大器 (op amp) 參數,並與大多數運算放大器和比較器相容。EVM 套件提供主板和多個插槽式子卡選項,可滿足封裝需求,使工程師能夠快速評估和驗證裝置性能。
AMP-PDK-EVM 套件支援五種最熱門的業界標準封裝,包括:
- D (SOIC-8)
- PW (TSSOP-14)
- DGK (VSSOP-8)
- DBV(SOT23-5 與 SOT23-6)
- DCK(SC70-5 與 SC70-6)
ANALOG-ENGINEER-CALC — 類比工程師計算機
CIRCUIT060013 — 具有 T 網路回饋電路的反相放大器
CIRCUIT060074 — 具有比較器電路的高壓側電流感測
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
TINA-TI — 基於 SPICE 的類比模擬程式
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
PDIP (N) | 14 | Ultra Librarian |
SOIC (D) | 14 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點