產品詳細資料

Package name USON, WSON Vrwm (V) 5.5 Bi-/uni-directional Bi-directional Number of channels 3 IO capacitance (typ) (pF) 20 IEC 61000-4-2 contact (±V) 15000 Features EMI Filter Clamping voltage (V) 10 Interface type Memory/SIM Card Breakdown voltage (min) (V) 6 IO leakage current (max) (nA) 100 Rating Catalog Operating temperature range (°C) -40 to 85
Package name USON, WSON Vrwm (V) 5.5 Bi-/uni-directional Bi-directional Number of channels 3 IO capacitance (typ) (pF) 20 IEC 61000-4-2 contact (±V) 15000 Features EMI Filter Clamping voltage (V) 10 Interface type Memory/SIM Card Breakdown voltage (min) (V) 6 IO leakage current (max) (nA) 100 Rating Catalog Operating temperature range (°C) -40 to 85
USON (DPV) 8 3.36 mm² 2.1 x 1.6 WSON (DQD) 8 2.295 mm² 1.7 x 1.35
  • Bidirectional EMI Filtering and Line Termination
    With Integrated ESD Protection
    • –3-dB Bandwidth 300 MHz
  • IEC 61000-4-2 Level 4 ESD Protection
    • ±15-kV Contact Discharge
    • ±15-kV Air Gap Discharge
  • DC Breakdown Voltage: 6 V (Minimum)
  • Low Leakage Current: 0.1 µA (Maximum)
  • Low Noise C-R-C Filter Topology
  • Integrated VCC Clamp Eliminates the Need for
    External ESD Protection
  • Space-Saving DPV (0.5-mm Pitch), DQD
    Packages (0.4-mm Pitch)
  • Bidirectional EMI Filtering and Line Termination
    With Integrated ESD Protection
    • –3-dB Bandwidth 300 MHz
  • IEC 61000-4-2 Level 4 ESD Protection
    • ±15-kV Contact Discharge
    • ±15-kV Air Gap Discharge
  • DC Breakdown Voltage: 6 V (Minimum)
  • Low Leakage Current: 0.1 µA (Maximum)
  • Low Noise C-R-C Filter Topology
  • Integrated VCC Clamp Eliminates the Need for
    External ESD Protection
  • Space-Saving DPV (0.5-mm Pitch), DQD
    Packages (0.4-mm Pitch)

The TPD3F303 device is a highly-integrated device that provides a three-channel Electromagnetic Interference (EMI) filter and a Transient Voltage Suppressor (TVS) based ESD protection diode array. The C-R-C based low-pass filter provides EMI protection for the data, clock, and reset lines of a SIM Card interface. Furthermore, the four-channel TVS Diode array provides IEC 61000-4-2 level 4 ESD protection for the previously mentioned signals (data, clock, reset) and the VCC power line. The TPD3F303 contains a 47-Ω termination resistor for the clock line and 100-Ω termination resistor for both the data and reset lines. The high level of integration offered by the TPD3F303 makes the device well-suited for applications like cell phones, tablets, hotspots, and PDAs.

The TPD3F303 device is a highly-integrated device that provides a three-channel Electromagnetic Interference (EMI) filter and a Transient Voltage Suppressor (TVS) based ESD protection diode array. The C-R-C based low-pass filter provides EMI protection for the data, clock, and reset lines of a SIM Card interface. Furthermore, the four-channel TVS Diode array provides IEC 61000-4-2 level 4 ESD protection for the previously mentioned signals (data, clock, reset) and the VCC power line. The TPD3F303 contains a 47-Ω termination resistor for the clock line and 100-Ω termination resistor for both the data and reset lines. The high level of integration offered by the TPD3F303 makes the device well-suited for applications like cell phones, tablets, hotspots, and PDAs.

下載

查看 TI.com 庫存中的類似產品

規格相似的產品依可用的 TI.com 庫存排序。

立即檢視

技術文件

star =TI 所選的此產品重要文件
找不到結果。請清除您的搜尋條件,然後再試一次。
檢視所有 1
類型 標題 日期
* Data sheet TPD3F303 ESD Protection and EMI Filter for SIM Card Interface datasheet (Rev. A) PDF | HTML 2016年 4月 27日

訂購與品質

內含資訊:
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊:
  • 晶圓廠位置
  • 組裝地點

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

內容係由 TI 和社群貢獻者依「現狀」提供,且不構成 TI 規範。檢視使用條款

若有關於品質、封裝或訂購 TI 產品的問題,請參閱 TI 支援。​​​​​​​​​​​​​​