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TPD3F303

現行

具有 300MHz -3dB 且適用於 SIM 卡的 3 通道 5.5-V、±15kV ESD 保護和 EMI 濾波器

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TPD3F303

現行
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產品詳細資料

Package name USON, WSON Vrwm (V) 5.5 Bi-/uni-directional Bi-directional Number of channels 3 IO capacitance (typ) (pF) 20 IEC 61000-4-2 contact (±V) 15000 Features EMI Filter Clamping voltage (V) 10 Interface type Memory/SIM Card Breakdown voltage (min) (V) 6 IO leakage current (max) (nA) 100 Rating Catalog Operating temperature range (°C) -40 to 85
Package name USON, WSON Vrwm (V) 5.5 Bi-/uni-directional Bi-directional Number of channels 3 IO capacitance (typ) (pF) 20 IEC 61000-4-2 contact (±V) 15000 Features EMI Filter Clamping voltage (V) 10 Interface type Memory/SIM Card Breakdown voltage (min) (V) 6 IO leakage current (max) (nA) 100 Rating Catalog Operating temperature range (°C) -40 to 85
USON (DPV) 8 3.36 mm² 2.1 x 1.6 WSON (DQD) 8 2.295 mm² 1.7 x 1.35
  • Bidirectional EMI Filtering and Line Termination
    With Integrated ESD Protection
    • –3-dB Bandwidth 300 MHz
  • IEC 61000-4-2 Level 4 ESD Protection
    • ±15-kV Contact Discharge
    • ±15-kV Air Gap Discharge
  • DC Breakdown Voltage: 6 V (Minimum)
  • Low Leakage Current: 0.1 µA (Maximum)
  • Low Noise C-R-C Filter Topology
  • Integrated VCC Clamp Eliminates the Need for
    External ESD Protection
  • Space-Saving DPV (0.5-mm Pitch), DQD
    Packages (0.4-mm Pitch)
  • Bidirectional EMI Filtering and Line Termination
    With Integrated ESD Protection
    • –3-dB Bandwidth 300 MHz
  • IEC 61000-4-2 Level 4 ESD Protection
    • ±15-kV Contact Discharge
    • ±15-kV Air Gap Discharge
  • DC Breakdown Voltage: 6 V (Minimum)
  • Low Leakage Current: 0.1 µA (Maximum)
  • Low Noise C-R-C Filter Topology
  • Integrated VCC Clamp Eliminates the Need for
    External ESD Protection
  • Space-Saving DPV (0.5-mm Pitch), DQD
    Packages (0.4-mm Pitch)

The TPD3F303 device is a highly-integrated device that provides a three-channel Electromagnetic Interference (EMI) filter and a Transient Voltage Suppressor (TVS) based ESD protection diode array. The C-R-C based low-pass filter provides EMI protection for the data, clock, and reset lines of a SIM Card interface. Furthermore, the four-channel TVS Diode array provides IEC 61000-4-2 level 4 ESD protection for the previously mentioned signals (data, clock, reset) and the VCC power line. The TPD3F303 contains a 47-Ω termination resistor for the clock line and 100-Ω termination resistor for both the data and reset lines. The high level of integration offered by the TPD3F303 makes the device well-suited for applications like cell phones, tablets, hotspots, and PDAs.

The TPD3F303 device is a highly-integrated device that provides a three-channel Electromagnetic Interference (EMI) filter and a Transient Voltage Suppressor (TVS) based ESD protection diode array. The C-R-C based low-pass filter provides EMI protection for the data, clock, and reset lines of a SIM Card interface. Furthermore, the four-channel TVS Diode array provides IEC 61000-4-2 level 4 ESD protection for the previously mentioned signals (data, clock, reset) and the VCC power line. The TPD3F303 contains a 47-Ω termination resistor for the clock line and 100-Ω termination resistor for both the data and reset lines. The high level of integration offered by the TPD3F303 makes the device well-suited for applications like cell phones, tablets, hotspots, and PDAs.
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類型 標題 日期
* Data sheet TPD3F303 ESD Protection and EMI Filter for SIM Card Interface datasheet (Rev. A) PDF | HTML 2016年 4月 27日
User guide Reading and Understanding an ESD Protection Data Sheet (Rev. A) PDF | HTML 2023年 9月 19日
Application note ESD Packaging and Layout Guide (Rev. B) PDF | HTML 2022年 8月 18日
Analog Design Journal Design Considerations for System-Level ESD Circuit Protection 2012年 9月 25日

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