TPS7H2201-SEP
- Standard micro circuit available, SMD 5962R17220
- Vendor item drawing available, VID V62/23608
- Radiation performance:
- Radiation hardness assurance (RHA) up to TID 100krad(Si)
- Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
- SEFI/SET characterized to LET = 75MeV-cm2/mg
- Integrated single channel eFuse
- Input voltage range: 1.5V to 7V
- Low on-resistance (RON) of :
- 35mΩ maximum at 25°C and VIN = 5V for CFP and KGD
- 23mΩ maximum at 25°C and VIN = 5V for HTSSOP
- 6-A maximum continuous switch current
- Low control input threshold enables use of 1.2, 1.8, 2.5, and 3.3V logic
- Configurable rise time (soft start)
- Reverse current protection
- Programmable and internal current limiting (fast-trip)
- Programmable fault timer (current limit and retry modes)
- Thermal shutdown
- Ceramic and plastic package with thermal pad
The TPS7H2201 is a single channel eFuse that provides configurable rise time to minimize inrush current and reverse current protection. The device contains a P-channel MOSFET that can operate over an input voltage range of 1.5V to 7V and can support a maximum continuous current of 6A. The switch is controlled by an on and off input (EN), which is capable of interfacing directly with low-voltage control signals.
The TPS7H2201 is available in a ceramic and plastic package with integrated thermal pad allowing for high power dissipation. The device is characterized for operation over the free-air temperature range of –55°C to 125°C.
技術文件
設計與開發
如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。
TPS7H2201EVM — 適用 1.5-V 至 7-V 輸入、6-A 負載開關/eFuse 的 TPS7H2201 評估模組
TPS7H2201EVM 展示單一 TPS7H2201 eFuse (耐輻射/強化塑膠) 的運作情況。電路板提供可裝入其他元件的元件封裝,以便進行自訂配置測試,例如平行或備援 eFuse。
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
---|---|---|
HTSSOP (DAP) | 32 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。