SLLSEQ0C august   2015  – may 2023 ISO5852S

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Description (continued)
  7. 6 Pin Configuration and Function
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Switching Characteristics
    11. 7.11 Insulation Characteristics Curves
    12. 7.12 Typical Characteristics
  9. 8 Parameter Measurement Information
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Supply and Active Miller Clamp
      2. 9.3.2 Active Output Pulldown
      3. 9.3.3 Undervoltage Lockout (UVLO) With Ready (RDY) Pin Indication Output
      4. 9.3.4 Soft Turnoff, Fault ( FLT) and Reset ( RST)
      5. 9.3.5 Short Circuit Clamp
    4. 9.4 Device Functional Modes
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1  Recommended ISO5852S Application Circuit
        2. 10.2.2.2  FLT and RDY Pin Circuitry
        3. 10.2.2.3  Driving the Control Inputs
        4. 10.2.2.4  Local Shutdown and Reset
        5. 10.2.2.5  Global-Shutdown and Reset
        6. 10.2.2.6  Auto-Reset
        7. 10.2.2.7  DESAT Pin Protection
        8. 10.2.2.8  DESAT Diode and DESAT Threshold
        9. 10.2.2.9  Determining the Maximum Available, Dynamic Output Power, POD-max
        10. 10.2.2.10 Example
        11. 10.2.2.11 Higher Output Current Using an External Current Buffer
      3. 10.2.3 Application Curves
  12. 11Power Supply Recommendations
  13. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 PCB Material
  14. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Third-Party Products Disclaimer
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Support Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  15. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10.2.2.10 Example

This examples considers an IGBT drive with the following parameters:

  • ION-PK = 2 A
  • QG = 650 nC
  • fINP = 20 kHz
  • VCC2 = 15 V
  • VEE2 = –8 V

Applying the value of the gate resistor RG = 10 Ω.

Then, calculating the worst-case output-power consumption as a function of RG, using Equation 5 ron-max = worst case output resistance in the on-state: 4 Ω, roff-max = worst case output resistance in the off-state: 2.5 Ω, RG = gate resistor yields

Equation 6. GUID-A36B7C15-0CF4-4BF9-A7C3-5F5F04E39076-low.gif

Because POL-WC = 72.61 mW is less than the calculated maximum of POL = 88.25 mW, the resistor value of RG = 10 Ω is suitable for this application.