SNOSDG3 December 2024 LM74681
PRODUCTION DATA
The gate drivers are used to control the external N-Channel MOSFETs by setting the GATE to SOURCE voltage to the corresponding mode of operation. The FETs on the top side Q1 and Q2 are driven by gates TG1 and TG2 and the FETs on the bottom side Q3 and Q4 are driven by gates BG1 and BG2 respectively.
The internal charge pump powers the top side gate drivers and depending on the DRAIN to SOURCE voltage of each MOSFET, LM74681 has three defined modes of operation the gate driver operates under which are forward regulation, full conduction mode and reverse current protection. These modes are described in more detail in Section 7.4.1.1, Section 7.4.1.2, and Section 7.4.2. Figure 7-1 depicts how the modes of operation vary according to the DRAIN to SOURCE voltage. The threshold between forward regulation and conduction modes is when the DRAIN to SOURCE voltage is VTG_REG. The threshold between forward regulation mode and reverse current protection mode is when the DRAIN to SOURCE voltage is VREV.
The bottom-side gate drivers of the LM74681 are powered directly from the IN1 or IN2 voltage and operate in two distinct modes which are forward full conduction and reverse current blocking. These gate drivers are controlled by below logic to ensure efficient power flow and protection against reverse current.