SBOSA36A January   2021  – July 2021 TMCS1108

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Power Ratings
    6. 7.6 Electrical Characteristics
    7. 7.7 Typical Characteristics
      1. 7.7.1 Insulation Characteristics Curves
  8. 8 Parameter Measurement Information
    1. 8.1 Accuracy Parameters
      1. 8.1.1 Sensitivity Error
      2. 8.1.2 Offset Error and Offset Error Drift
      3. 8.1.3 Nonlinearity Error
      4. 8.1.4 Power Supply Rejection Ratio
      5. 8.1.5 Common-Mode Rejection Ratio
      6. 8.1.6 External Magnetic Field Errors
    2. 8.2 Transient Response Parameters
      1. 8.2.1 Slew Rate
      2. 8.2.2 Propagation Delay and Response Time
      3. 8.2.3 Current Overload Parameters
      4. 8.2.4 CMTI, Common-Mode Transient Immunity
    3. 8.3 Safe Operating Area
      1. 8.3.1 Continuous DC or Sinusoidal AC Current
      2. 8.3.2 Repetitive Pulsed Current SOA
      3. 8.3.3 Single Event Current Capability
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Current Input
      2. 9.3.2 High-Precision Signal Chain
        1. 9.3.2.1 Lifetime and Environmental Stability
        2. 9.3.2.2 Frequency Response
        3. 9.3.2.3 Transient Response
      3. 9.3.3 Internal Reference Voltage
      4. 9.3.4 Current-Sensing Measurable Ranges
    4. 9.4 Device Functional Modes
      1. 9.4.1 Power-Down Behavior
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Total Error Calculation Examples
        1. 10.1.1.1 Room Temperature Error Calculations
        2. 10.1.1.2 Full Temperature Range Error Calculations
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Development Support
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Support Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.6 Electrical Characteristics

at TA = 25°C, VS = 5 V (unless otherwise noted)
PARAMETERSTEST CONDITIONSMINTYPMAXUNIT
OUTPUT
Sensitivity(7)TMCS1108A1B50mV/A
TMCS1108A2B100mV/A
TMCS1108A3B200mV/A
TMCS1108A4B400mV/A
TMCS1108A1U50mV/A
TMCS1108A2U100mV/A
TMCS1108A3U200mV/A
TMCS1108A4U400mV/A
Sensitivity error0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= 25ºC±0.4%±1.2%
TMCS1108A1U, 0.05 V ≤ VOUT ≤ 3 V,
TA= 25ºC		±0.4%±1.2%
Sensitivity error, including lifetime and environmental drift (5)0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= 25ºC±0.7%±1.8%
Sensitivity error0.05 V ≤ VOUT ≤ VS – 0.2 V,
TA= –40ºC to +85ºC		±0.7%±1.8%
TMCS1108A1U, 0.05 V ≤ VOUT ≤ 3 V,
TA= –40ºC to +85ºC		±0.7%±1.8%
0.05 V ≤ VOUT ≤ VS – 0.2 V,
TA= –40ºC to +125ºC		±0.9%±2.25%
TMCS1108A1U, 0.05 V ≤ VOUT ≤ 3 V,
TA= –40ºC to +125ºC		±0.9%±2.25%
Nonlinearity errorVOUT = 0.5 V to VS – 0.5 V±0.5%
TMCS1108A1U, VOUT = 0.5 V to 3 V±0.5%
VOEOutput voltage offset error(1)TMCS1108A1B±2±8mV
TMCS1108A2B±2±10mV
TMCS1108A3B±3±12mV
TMCS1108A4B±5±30mV
TMCS1108A1U±2±8mV
TMCS1108A2U±2±10mV
TMCS1108A3U±5±12mV
TMCS1108A4U±15±30mV
Output voltage offset driftTMCS1108A1B, TA= –40ºC to +125ºC±10±30µV/℃
TMCS1108A2B, TA= –40ºC to +125ºC±10±40µV/℃
TMCS1108A3B, TA= –40ºC to +125ºC±15±80µV/℃
TMCS1108A4B, TA= –40ºC to +125ºC±40±170µV/℃
TMCS1108A1U, TA= –40ºC to +125ºC±10±30µV/℃
TMCS1108A2U, TA= –40ºC to +125ºC±10±40µV/℃
TMCS1108A3U, TA= –40ºC to +125ºC±20±80µV/℃
TMCS1108A4U, TA= –40ºC to +125ºC±50±170µV/℃
IOSOffset error, RTI(1)(3)TMCS1108A1B±40±160mA
TMCS1108A2B±20±100mA
TMCS1108A3B±15±60mA
TMCS1108A4B±12.5±75mA
TMCS1108A1U±40±160mA
TMCS1108A2U±20±100mA
TMCS1108A3U±25±60mA
TMCS1108A4U±37.5±75mA
Offset error temperature drift, RTI(3)TMCS1108A1B, TA= –40ºC to +125ºC±200±600µA/°C
TMCS1108A2B, TA= –40ºC to +125ºC±100±400µA/°C
TMCS1108A3B, TA= –40ºC to +125ºC±75±400µA/°C
TMCS1108A4B, TA= –40ºC to +125ºC±100±425µA/°C
TMCS1108A1U, TA= –40ºC to +125ºC±200±600µA/°C
TMCS1108A2U, TA= –40ºC to +125ºC±100±400µA/°C
TMCS1108A3U, TA= –40ºC to +125ºC±100±400µA/°C
TMCS1108A4U, TA= –40ºC to +125ºC±125±425µA/°C
PSRRPower-supply rejection ratioVS = 3 V to 5.5 V, TA= –40ºC to +125ºC±1±6.5mV/V
TMCS1108A4B/U, VS = 4.5 V to 5.5 V,
TA= –40ºC to +125ºC		±1±6.5mV/V
CMTICommon mode transient immunity50kV/µs
CMRRCommon mode rejection ratio, RTI(3)DC to 60Hz5uA/V
Zero current VOUT(1)TMCS1108AxU0.1*VSV/V
TMCS1108AxB0.5*VSV/V
Noise density, RTI(3)TMCS1108A1B380μA/√Hz
TMCS1108A2B330μA/√Hz
TMCS1108A3B300μA/√Hz
TMCS1108A4B225μA/√Hz
TMCS1108A1U380μA/√Hz
TMCS1108A2U330μA/√Hz
TMCS1108A3U300μA/√Hz
TMCS1108A4U225μA/√Hz
INPUT
RINInput conductor resistanceIN+ to IN–1.8mΩ
Input conductor resistance temperature driftTA= –40ºC to +125ºC4.4μΩ/°C
GMagnetic coupling factorTA= 25ºC1.1mT/A
IIN,maxAllowable continuous RMS current (4)TA= 25ºC30A
TA= 85ºC25A
TA= 105ºC22.5A
TA= 125ºC16A
NC (Pin 6) input impedanceOver allowable range, GND < VNC < VS1MΩ
VOLTAGE OUTPUT
ZOUTClosed loop output impedancef = 1 Hz to 1 kHz0.2Ω
f = 10 kHz2Ω
Maximum capacitive loadNo sustained oscillation1nF
Short circuit output currentVOUT short to ground, short to VS90mA
Swing to VS power-supply railRL = 10 kΩ to GND, TA= –40ºC to +125ºCVS – 0.02VS – 0.1V
Swing to GNDRL = 10 kΩ to GND, TA= –40ºC to +125ºCVGND + 5VGND + 10mV
FREQUENCY RESPONSE
BWBandwidth(6)–3-dB Bandwidth80kHz
SRSlew rate(6)Slew rate of output amplifier during single transient step.1.5V/µs
trResponse time(6)Time between the input current step reaching 90% of final value to the sensor output reaching 90% of its final value, for a 1V output transition.6.5µs
tpPropagation delay(6)Time between the input current step reaching 10% of final value to the sensor output reaching 10% of its final value, for a 1V output transition.4µs
tr,SCCurrent overload response time(6)Time between the input current step reaching 90% of final value to the sensor output reaching 90% of its final value. Input current step amplitude is twice full scale output range.5µs
tp,SCCurrent overload propagation delay(6)Time between the input current step reaching 10% of final value to the sensor output reaching 10% of its final value. Input current step amplitude is twice full scale output range.3µs
Current overload recovery timeTime from end of current causing output saturation condition to valid output15
µs

POWER SUPPLY
IQQuiescent currentTA = 25ºC4.55.5mA
TA = –40ºC to +125ºC6mA
Power on timeTime from VS > 3 V to valid output25ms
(1) Excludes effect of external magnetic fields. See the Accuracy Parameters section for details to calculate error due to external magnetic fields.
(3) RTI = referred-to-input. Output voltage is divided by device sensitivity to refer signal to input current. See the Parameter Measurement Information section.
(4) Thermally limited by junction temperature. Applies when device mounted on TMCS1108EVM. For more details, see the Safe Operating Area section.
(5) Lifetime and environmental drift specifications based on three lot AEC-Q100 qualification stress test results. Typical values are population mean+1σ from worst case stress test condition. Min/max are tested device population mean±6σ; devices tested in AEC-Q100 qualification stayed within min/max limits for all stress conditions. See Lifetime and Environmental Stability section for more details.
(6) Refer to the Transient Response section for details of frequency and transient response of the device.
(7) Centered parameter based on TMCS1108EVM PCB layout. See Layout section. Device must be operated below maximum junction temperature.