SLLS822C July   2007  – December 2024 TRSF3221E

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  ESD Ratings, IEC Specifications
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Thermal Resistance Characteristics
    6. 5.6  Electrical Characteristics
    7. 5.7  Electrical Characteristics, Driver
    8. 5.8  Switching Characteristics, Driver
    9. 5.9  Electrical Characteristics, Receiver
    10. 5.10 Switching Characteristics, Receiver
    11. 5.11 Electrical Characteristics, Auto-Powerdown
    12. 5.12 Switching Characteristics, Auto-Powerdown
    13. 5.13 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Typical Application
        1. 8.1.1.1 Design Requirements
        2. 8.1.1.2 Detailed Design Procedure
      2. 8.1.2 Application Performance Plot
    2. 8.2 Power Supply Recommendations
    3. 8.3 Layout
      1. 8.3.1 Layout Guidelines
      2. 8.3.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.7 Electrical Characteristics, Driver

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
(see Figure 8-1)
PARAMETER TEST CONDITIONS(1) MIN TYP(2) MAX UNIT
VOH High-level output voltage DOUT at RL = 3 kΩ to GND, DIN = GND 5 5.4 V
VOL Low-level output voltage DOUT at RL = 3 kΩ to GND, DIN = VCC –5 –5.4 V
IIH High-level input current VI = VCC ±0.01 ±1 μA
IIL Low-level input current VI at GND ±0.01 ±1 μA
IOS Short-circuit output current(3) VCC = 3.6 V, VO = 0 V ±35 ±60 mA
VCC = 5.5 V, VO = 0 V ±35 ±90
ro Output resistance VCC, V+, and V– = 0 V, VO = ±2 V 300 10M Ω
Ioff Output leakage current FORCEOFF = GND VO = ±12 V, VCC = 3 V to 3.6 V ±25 μA
VO = ±10 V, VCC = 4.5 V to 5.5 V ±25
(1) Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.
(2) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(3) Short-circuit durations must be controlled to prevent exceeding the device absolute power dissipation ratings, and not more than one output can be shorted at a time.