SCDS208B JUNE   2007  – October 2016 TS3A24157

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: 3-V Supply
    6. 6.6 Electrical Characteristics: 2.5-V Supply
    7. 6.7 Electrical Characteristics: 1.8-V Supply
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Device Nomenclature
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RSE|10
  • DGS|10
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)(3)
MIN MAX UNIT
Supply voltage –0.5 3.6 V
Analog signal voltage(4) –0.5 VCC + 0.5 V
Digital input voltage –0.5 3.6 V
Analog port diode current VNC, VNO, VCOM < 0 –50 50 mA
ON-state switch current VNC, VNO, VCOM = 0 to VCC –300 300 mA
ON-state peak switch current(5) VNC, VNO, VCOM = 0 to VCC –500 500 mA
Digital input clamp current VIN < 0 –50 mA
Continuous current through VCC 100 mA
Continuous current through GND –100 mA
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to ground, unless otherwise specified.
(3) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(4) This value is limited to 5.5 V (maximum).
(5) Pulse at 1-ms duration < 10% duty cycle.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Supply voltage 1.65 3.6 V
VNC Analog signal voltage NC1, NC2 0 VCC V
VNO NO1, NO2 0 VCC
VCOM COM1, COM2 0 VCC
VIN Digital input voltage 0 VCC V

6.4 Thermal Information

THERMAL METRIC(1) TS3A24157 UNIT
DGS (VSSOP) RSE (UQFN)
10 PINS 10 PINS
RθJA Junction-to-ambient thermal resistance 188.5 160.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 76.5 77.8 °C/W
RθJB Junction-to-board thermal resistance 108.2 82.2 °C/W
ψJT Junction-to-top characterization parameter 15.3 4.3 °C/W
ψJB Junction-to-board characterization parameter 106.8 82.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics: 3-V Supply

VCC = 3 V, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG SWITCH
rPEAK Peak ON resistance 0 ≤ (VNC or VNO) ≤ VCC, VCC = 2.7 V,
ICOM = –100 mA, Switch ON, See Figure 10		 TA = 25°C 0.5 0.65 Ω
–40°C ≤ TA ≤ 85°C 0.75
rON ON-state resistance VNC or VNO = 2 V, VCC = 2.7 V,
ICOM = –100 mA, Switch ON, See Figure 10		 TA = 25°C 0.45 0.6 Ω
–40°C ≤ TA ≤ 85°C 0.65
ΔrON ON-state resistance match between channels VNC or VNO = 2 V or 0.8 V, VCC = 2.7 V,
ICOM = –100 mA, Switch ON, See Figure 10		 TA = 25°C 0.05 0.07 Ω
–40°C ≤ TA ≤ 85°C 0.08
rON(FLAT) ON-state resistance flatness VCC = 2.7 V, ICOM = –100 mA, Switch ON, See Figure 10 0 ≤ (VNC or VNO) ≤ VCC 0.025 Ω
VNC or VNO =
2 V or 0.8 V		 TA = 25°C 0.01 0.04
–40°C ≤ TA ≤ 85°C 0.1
INC(OFF), INO(OFF) NC and NO OFF leakage current VNC or VNO = 1 V and VCOM = 3 V, or
VNC or VNO = 3 V and VCOM = 1 V;
VCC = 3.6 V, Switch OFF, See Figure 11		 TA = 25°C –50 50 nA
–40°C ≤ TA ≤ 85°C –250 250
INC(ON), INO(ON) NC and NO ON leakage current VNC or VNO = 1 V or 3 V, VCOM = Open,
VCC = 3.6 V, Switch ON, See Figure 12		 TA = 25°C –50 50 nA
–40°C ≤ TA ≤ 85°C –400 400
ICOM(ON) COM ON leakage current VNC or VNO = Open, VCOM = 1 V or 3 V,
VCC = 3.6 V, Switch ON, See Figure 12		 TA = 25°C –50 50 nA
–40°C ≤ TA ≤ 85°C –400 400
DIGITAL CONTROL INPUTS (IN1, IN2)(1)
VIH Input logic high 2.7 V ≤ VCC ≤ 3.6 V, –40°C ≤ TA ≤ 85°C 1.4 V
VIL Input logic low 2.7 V ≤ VCC ≤ 3.6 V, –40°C ≤ TA ≤ 85°C 0.5 V
IIH, IIL Input leakage current VIN = 3.6 V or GND, VCC = 3.6 V TA = 25°C –50 5 50 nA
–40°C ≤ TA ≤ 85°C –150 150
DYNAMIC
tON Turnon time VCOM = VCC, RL = 50 Ω,
CL = 35 pF, See Figure 14		 VCC = 3 V, TA = 25°C 20 35 ns
2.7 V ≤ VCC ≤ 3.6 V, –40°C ≤ TA ≤ 85°C 40
tOFF Turnoff time VCOM = VCC, RL = 50 Ω,
CL = 35 pF, See Figure 14		 VCC = 3 V, TA = 25°C 12 25 ns
2.7 V ≤ VCC ≤ 3.6 V, –40°C ≤ TA ≤ 85°C 30
tBBM Break-before-make time VNC = VNO = VCC, RL = 50 Ω,
CL = 35 pF, See Figure 15		 VCC = 3 V, TA = 25°C 1 10 25 ns
2.7 V ≤ VCC ≤ 3.6 V, –40°C ≤ TA ≤ 85°C 0.5 30
QC Charge injection VGEN = 0, RGEN = 0, CL = 1 nF, See Figure 19 8.75 pC
CNC(OFF), CNO(OFF) NC and NO OFF capacitance (VNC or VNO) = VCC or GND, Switch OFF, See Figure 13 50 pF
CNC(ON), CNO(ON) NC and NO ON capacitance (VNC or VNO) = VCC or GND, Switch ON, See Figure 13 140 pF
CCOM(ON) COM ON capacitance VCOM = VCC or GND, Switch ON, See Figure 13 140 pF
CI Digital input capacitance VIN = VCC or GND, See Figure 13 2 pF
BW Bandwidth RL = 50 Ω, Switch ON, See Figure 16 50 MHz
OISO OFF isolation RL = 50 Ω, f = 1 MHz, See Figure 17 –72 dB
XTALK Crosstalk RL = 50 Ω, f = 1 MHz, See Figure 18 –72 dB
THD Total harmonic distortion RL = 600 Ω, CL = 50 pF, f = 20 Hz to 20 kHz, See Figure 20 0.005%
SUPPLY
ICC Positive supply current VIN = VCC or GND, VCC = 3.6 V TA = 25°C 15 200 nA
–40°C ≤ TA ≤ 85°C 1200
(1) All unused digital inputs of the device must be held at VCCor GND to ensure proper device operation. See Implications of Slow or Floating CMOS Inputs.

6.6 Electrical Characteristics: 2.5-V Supply

VCC = 2.5 V, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG SWITCH
rPEAK Peak ON resistance 0 ≤ (VNO or VNC) ≤ VCC, VCC = 2.3 V,
ICOM = –8 mA, Switch ON, See Figure 10		 TA = 25°C 0.55 0.75 Ω
–40°C ≤ TA ≤ 85°C 0.9
rON ON-state resistance VNO or VNC = 1.8 V, VCC = 2.3 V,
ICOM = –8 mA, Switch ON, See Figure 10		 TA = 25°C 0.56 0.75 Ω
–40°C ≤ TA ≤ 85°C 0.85
ΔrON ON-state resistance match between channels VNO or VNC = 1.8 V or 0.8 V, VCC = 2.3 V,
ICOM = –8 mA, Switch ON, See Figure 10		 TA = 25°C 0.1 0.15 Ω
–40°C ≤ TA ≤ 85°C 0.15
rON(FLAT) ON-state resistance flatness VCC = 2.3 V, ICOM = –8 mA, Switch ON, See Figure 10 0 ≤ (VNO or VNC) ≤ VCC 0.1 0.15 Ω
VNO or VNC =
0.8 V or 1.8 V		 TA = 25°C 0.17
–40°C ≤ TA ≤ 85°C 0.2
INC(OFF), INO(OFF) NC and NO OFF leakage current VNC or VNO = 0.5 V and VCOM = 2.2 V, or
VNC or VNO = 2.2 V and VCOM = 0.5 V;
VCC = 2.7 V, Switch OFF, See Figure 11		 TA = 25°C –50 50 nA
–40°C ≤ TA ≤ 85°C –250 250
INC(ON), INO(ON) NC and NO ON leakage current VNC or VNO = 0.5 V or 2.2 V, VCOM = Open,
VCC = 2.7 V, Switch ON, See Figure 12		 TA = 25°C –50 50 nA
–40°C ≤ TA ≤ 85°C –400 400
ICOM(ON) COM ON leakage current VNC or VNO = Open, VCOM = 0.5 V or 2.2 V,
VCC = 2.7 V, Switch ON, See Figure 12		 TA = 25°C –50 50 nA
–40°C ≤ TA ≤ 85°C –400 400
DIGITAL CONTROL INPUTS (IN1, IN2)(1)
VIH Input logic high 2.3 V ≤ VCC ≤ 2.7 V, –40°C ≤ TA ≤ 85°C 1.25 V
VIL Input logic low 2.3 V ≤ VCC ≤ 2.7 V, –40°C ≤ TA ≤ 85°C 0.5 V
IIH, IIL Input leakage current VIN = 2.7 V or GND, VCC = 2.7 V TA = 25°C –50 50 nA
–40°C ≤ TA ≤ 85°C –50 50
DYNAMIC
tON Turnon time VCOM = VCC, RL = 50 Ω,
CL = 35 pF, See Figure 14		 VCC = 2.5 V, TA = 25°C 23 45 ns
2.3 V ≤ VCC ≤ 2.7 V, –40°C ≤ TA ≤ 85°C 50
tOFF Turnoff time VCOM = VCC, RL = 50 Ω,
CL = 35 pF, See Figure 14		 VCC = 2.5 V, TA = 25°C 17 27 ns
2.3 V ≤ VCC ≤ 2.7 V, –40°C ≤ TA ≤ 85°C 30
tBBM Break-before- make time VNC = VNO = VCC, RL = 50 Ω,
CL = 35 pF, See Figure 15		 VCC = 2.5 V, TA = 25°C 2 14 30 ns
2.3 V ≤ VCC ≤ 2.7 V, –40°C ≤ TA ≤ 85°C 1 35
QC Charge injection VGEN = 0, RGEN = 0, CL = 1 nF, See Figure 19 8 pC
CNC(OFF), CNO(OFF) NC and NO OFF capacitance VNC or VNO = VCC or GND, Switch OFF, See Figure 13 50 pF
CNC(ON), CNO(ON) NC and NO ON capacitance VNC or VNO = VCC or GND, Switch ON, See Figure 13 140 pF
CCOM(ON) COM ON capacitance VCOM = VCC or GND, Switch ON, See Figure 13 140 pF
CI Digital input capacitance VIN = VCC or GND, See Figure 13 2 pF
BW Bandwidth RL = 50 Ω, Switch ON, See Figure 16 50 MHz
OISO OFF isolation RL = 50 Ω, f = 1 MHz, See Figure 17 –72 dB
XTALK Crosstalk RL = 50 Ω, f = 1 MHz, See Figure 18 –72 dB
THD Total harmonic distortion RL = 600 Ω, CL = 50 pF, f = 20 Hz to 20 kHz, See Figure 20 0.006%
SUPPLY
ICC Positive supply current VIN = VCC or GND, VCC = 2.7 V TA = 25°C 10 150 nA
–40°C ≤ TA ≤ 85°C 700
(1) All unused digital inputs of the device must be held at VCCor GND to ensure proper device operation. See Implications of Slow or Floating CMOS Inputs.

6.7 Electrical Characteristics: 1.8-V Supply

VCC = 1.8 V, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG SWITCH
rPEAK Peak ON resistance 0 ≤ (VNO or VNC) ≤ VCC, VCC = 1.65 V,
ICOM = –2 mA, Switch ON, See Figure 10		 TA = 25°C 0.8 1.25 Ω
–40°C ≤ TA ≤ 85°C 1.4
rON ON-state resistance VNO or VNC = 1.5 V, VCC = 1.65 V,
ICOM = –2 mA, Switch ON, See Figure 10		 TA = 25°C 0.6 0.95 Ω
–40°C ≤ TA ≤ 85°C 1
ΔrON ON-state resistance match between channels VNO or VNC = 0.6 V or 1.5 V, VCC = 1.65 V,
ICOM = –2 mA, Switch ON, See Figure 10		 TA = 25°C 0.1 0.15 Ω
–40°C ≤ TA ≤ 85°C 0.15
rON(FLAT) ON-state resistance flatness VCC = 1.65 V, ICOM = –2 mA, Switch ON, See Figure 10 0 ≤ (VNO or VNC) ≤ VCC 0.35 0.13 Ω
VNO or VNC =
0.6 V or 1.5 V		 TA = 25°C 0.05
–40°C ≤ TA ≤ 85°C 0.2
INC(OFF), INO(OFF) NC and NO OFF leakage current VNC or VNO = 0.3 V and VCOM = 1.65 V, or
VNC or VNO = 1.65 V and VCOM = 0.3 V;
VCC = 1.65, Switch OFF, See Figure 11		 TA = 25°C –50 50 nA
–40°C ≤ TA ≤ 85°C –250 250
INC(ON), INO(ON) NC and NO ON leakage current VNC or VNO = 0.3 V or 1.65 V, VCOM = Open,
VCC = 1.95 V, Switch ON, See Figure 12		 TA = 25°C –50 50 nA
–40°C ≤ TA ≤ 85°C –400 400
ICOM(ON) COM ON leakage current VNC or VNO = Open, VCOM = 0.3 V or 1.65 V,
VCC = 1.95 V, Switch ON, See Figure 12		 TA = 25°C –50 50 nA
–40°C ≤ TA ≤ 85°C –400 400
DIGITAL CONTROL INPUTS (IN1, IN2)(1)
VIH Input logic high 1.65 V ≤ VCC ≤ 1.95 V, –40°C ≤ TA ≤ 85°C 1 V
VIL Input logic low 1.65 V ≤ VCC ≤ 1.95 V, –40°C ≤ TA ≤ 85°C 0.4 V
IIH, IIL Input leakage current VIN = 1.95 V or GND, VCC = 1.95 V 25°C 0 50 nA
–40°C ≤ TA ≤ 85°C 150
DYNAMIC
tON Turnon time VCOM = VCC, RL = 50 Ω,
CL = 35 pF, See Figure 14		 VCC = 1.8 V, TA = 25°C 33 75 ns
1.65 V ≤ VCC ≤ 1.95 V, –40°C ≤ TA ≤ 85°C 80
tOFF Turnoff time VCOM = VCC, RL = 50 Ω,
CL = 35 pF, See Figure 14		 VCC = 1.8 V, TA = 25°C 24 35 ns
1.65 V ≤ VCC ≤ 1.95 V, –40°C ≤ TA ≤ 85°C 40
tBBM Break-before- make time VNC = VNO = VCC, RL = 50 Ω,
CL = 35 pF, See Figure 15		 VCC = 1.8 V, TA = 25°C 2 20 40 ns
1.65 V ≤ VCC ≤ 1.95 V, –40°C ≤ TA ≤ 85°C 1 50
QC Charge injection VGEN = 0, RGEN = 0, CL = 1 nF, See Figure 19 4 pC
CNC(OFF), CNO(OFF) NC and NO OFF capacitance VNC or VNO = VCC or GND, Switch OFF, See Figure 13 50 pF
CNC(ON), CNO(ON) NC and NO ON capacitance VNC or VNO = VCC or GND, Switch ON, See Figure 13 140 pF
CCOM(ON) COM ON capacitance VCOM = VCC or GND, Switch ON, See Figure 13 140 pF
CI Digital input capacitance VIN = VCC or GND, See Figure 13 2 pF
BW Bandwidth RL = 50 Ω, Switch ON, See Figure 16 48 MHz
OISO OFF isolation RL = 50 Ω, f = 1 MHz, See Figure 17 –73 dB
XTALK Crosstalk RL = 50 Ω, f = 1 MHz, See Figure 18 –72 dB
THD Total harmonic distortion RL = 600 Ω, CL = 50 pF, f = 20 Hz to 20 kHz, See Figure 20 0.005%
Supply
ICC Positive supply current VIN = VCC or GND, VCC = 1.95 V TA = 25°C 10 100 nA
–40°C ≤ TA ≤ 85°C 600
(1) All unused digital inputs of the device must be held at VCCor GND to ensure proper device operation. See Implications of Slow or Floating CMOS Inputs.

6.8 Typical Characteristics

TS3A24157 g_ron_vcom_165_cds208.gif
VCC = 1.65 V
Figure 1. rON vs VCOM
TS3A24157 g_ron_vcom_27_cds208.gif
VCC = 2.7 V
Figure 3. rON vs VCOM
TS3A24157 g_tonoff_v_cds208.gif Figure 5. tON and tOFF vs Supply Voltage
TS3A24157 g_offiso_cds208.gif Figure 7. OFF Isolation
TS3A24157 g_i_v_cds208.gif Figure 9. Power-Supply Current vs VCC
TS3A24157 g_ron_vcom_23_cds208.gif
VCC = 2.3 V
Figure 2. rON vs VCOM
TS3A24157 g_qc_vcom_cds208.gif
Figure 4. Charge Injection vs VCOM
TS3A24157 g_bandwidth_cds208.gif Figure 6. Bandwidth
TS3A24157 g_xtalk_freq_cds208_v2.gif Figure 8. Crosstalk