JAJSAG9M November 2005 – January 2017 DS90C124 , DS90C241
PRODUCTION DATA.
MIN | MAX | UNIT | ||
VCC | Supply voltage | –0.3 | 4 | V |
LVCMOS/LVTTL input voltage | –0.3 | VCC + 0.3 | V | |
LVCMOS/LVTTL output voltage | –0.3 | VCC + 0.3 | V | |
LVDS receiver input voltage | –0.3 | 3.9 | V | |
LVDS driver output voltage | –0.3 | 3.9 | V | |
LVDS output short circuit duration | 10 | ms | ||
TJ | Junction temperature | 150 | °C | |
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±8000 | V | |
Charged-device model (CDM), per AEC Q100-011 | ±1250 | ||||
RD = 330 Ω, CS = 150 pF | IEC, powered-up only contact discharge (RIN0+, RIN0-, RIN1+, RIN1-) | ±8000 | |||
IEC, powered-up only air-gap discharge (RIN0+, RIN0-, RIN1+, RIN1-) | ±15000 | ||||
RD = 330 Ω, CS = 150 and 330 pF | ISO10605 contact discharge (RIN0+, RIN0-, RIN1+, RIN1-) |
±8000 | |||
ISO10605 air-gap discharge (RIN0+, RIN0-, RIN1+, RIN1-) |
±15000 | ||||
RD = 2 kΩ, CS = 150 and 330 pF | ISO10605 contact discharge (RIN0+, RIN0-, RIN1+, RIN1-) |
±8000 | |||
ISO10605 air-gap discharge (RIN0+, RIN0-, RIN1+, RIN1-) |
±15000 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VCC | Supply voltage | 3 | 3.3 | 3.6 | V |
Clock rate | 5 | 35 | MHz | ||
Supply noise | ±100 | mVP-P | |||
TA | Operating free-air temperature | −40 | 25 | 105 | °C |
THERMAL METRIC(1) | DS90C241-Q1 DS90C124-Q1 |
UNIT | |
---|---|---|---|
TFB (TQFP) | |||
48 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 67.5 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 15.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 33.4 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.4 | °C/W |
ψJB | Junction-to-board characterization parameter | 33 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
LVCMOS AND LVTTL DC SPECIFICATIONS | |||||||
VIH | High-level voltage | Tx: DIN[23:0], TCLK, TPWDNB, DEN, TRFB, DCAOFF, DCBOFF, and VODSEL; and Rx: RPWDNB, RRFB, and REN |
2 | VCC | V | ||
VIL | Low-level input voltage | Tx: DIN[23:0], TCLK, TPWDNB, DEN, TRFB, DCAOFF, DCBOFF, and VODSEL; and Rx: RPWDNB, RRFB, and REN |
GND | 0.8 | V | ||
VCL | Input clamp voltage | ICL = −18 mA, Tx: DIN[23:0], TCLK, TPWDNB, DEN, TRFB, DCAOFF, DCBOFF, and VODSEL; and Rx: RPWDNB, RRFB, and REN(1) |
−0.8 | −1.5 | V | ||
IIN | Input current | VIN = 0 V or 3.6 V | Tx: DIN[23:0], TCLK, TPWDNB, DEN, TRFB, DCAOFF, DCBOFF, and VODSEL | −10 | ±5 | 10 | µA |
Rx: RPWDNB, RRFB, and REN | −20 | ±5 | 20 | ||||
VOH | High-level output voltage | IOH = −4 mA, Rx: ROUT[23:0], RCLK, and LOCK | 2.3 | 3 | VCC | V | |
VOL | Low-level output voltage | IOL = 4 mA, Rx: ROUT[23:0], RCLK, and LOCK | GND | 0.33 | 0.5 | V | |
IOS | Output short circuit current | VOUT = 0 V, Rx: ROUT[23:0], RCLK, and LOCK(1) | −40 | −70 | −110 | mA | |
IOZ | TRI-STATE output current | RPWDNB, REN = 0 V, VOUT = 0 V or 2.4 V, Rx: ROUT[23:0], RCLK, and LOCK |
−30 | ±0.4 | 30 | µA | |
LVDS DC SPECIFICATIONS | |||||||
VTH | Differential threshold high voltage | VCM = 1.2 V, Rx: RIN+ and RIN− | 50 | mV | |||
VTL | Differential threshold low voltage | Rx: RIN+ and RIN− | −50 | mV | |||
IIN | Input current | VIN = 2.4 V, VCC = 3.6 V or 0 V, Rx: RIN+ and RIN− | ±200 | µA | |||
VIN = 0 V, VCC = 3.6 V, Rx: RIN+ and RIN− | ±200 | ||||||
VOD | Output differential voltage (DOUT+) – (DOUT−) |
RL = 100 Ω, without pre-emphasis, Tx: DOUT+ and DOUT− (see Figure 12) | VODSEL = L | 250 | 400 | 600 | mV |
VODSEL = H | 450 | 750 | 1200 | ||||
ΔVOD | Output differential voltage unbalance | RL = 100 Ω, without pre-emphasis, Tx: DOUT+ and DOUT− | 10 | 50 | mV | ||
VOS | Offset voltage | RL = 100 Ω, without pre-emphasis, Tx: DOUT+ and DOUT− | 1 | 1.25 | 1.5 | V | |
ΔVOS | Offset voltage unbalance | RL = 100 Ω, without pre-emphasis, Tx: DOUT+ and DOUT− | 1 | 50 | mV | ||
IOS | Output short circuit current | DOUT = 0 V, DIN = H, TPWDNB, DEN = 2.4 V, Tx: DOUT+ and DOUT− |
VODSEL = L | −2 | −8 | mA | |
DOUT = 0 V, DIN = H, TPWDNB, DEN = 2.4 V, Tx: DOUT+ and DOUT− |
VODSEL = H | −7 | −13 | ||||
IOZ | TRI-STATE output current | TPWDNB, DEN = 0 V, DOUT = 0 V or 2.4 V, Tx: DOUT+ and DOUT− |
−15 | ±1 | 15 | µA | |
SERIALIZER OR DESERIALIZER SUPPLY CURRENT – DVDDx, PVDDx, AND AVDDx PINS (Digital, PLL, and Analog VDDs) | |||||||
ICCT | Serializer (Tx) total supply current (includes load current) | RL = 100 Ω, RPRE = OFF, VODSEL = H/L, f = 35 MHz, and checker-board pattern (see Figure 3) | 40 | 65 | mA | ||
RL = 100 Ω, RPRE = 6 kΩ, VODSEL = H/L, f = 35 MHz, and checker-board pattern (see Figure 3) | 45 | 70 | mA | ||||
Serializer (Tx) total supply current (includes load current) | f = 35 MHz, RL = 100 Ω, RPRE = OFF, and VODSEL = H/L |
40 | 65 | mA | |||
f = 35 MHz, RL = 100 Ω, RPRE = 6 kΩ, VODSEL = H/L, and random pattern | 45 | 70 | mA | ||||
ICCTZ | Serializer (Tx) supply current power-down | TPWDNB = 0 V (all other LVCMOS inputs = 0 V) | 800 | µA | |||
ICCR | Deserializer (Rx) total supply current (includes load current) | CL = 8-pF LVCMOS output, f = 35 MHz, and checker-board pattern (see Figure 4) | 85 | mA | |||
Deserializer (Rx) total supply current (includes load current) | CL = 8-pF LVCMOS output, f = 35 MHz, and random pattern | 80 | mA | ||||
ICCRZ | Deserializer (Rx) supply current power-down | RPWDNB = 0 V (all other LVCMOS inputs = 0 V, RIN+/ RIN– = 0 V) |
50 | µA |
MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|
tTCP | Transmit clock period (see Figure 7) | 28.6 | T | 200 | ns | |
tTCIH | Transmit clock high time | 0.4T | 0.5T | 0.6T | ns | |
tTCIL | Transmit clock low time | 0.4T | 0.5T | 0.6T | ns | |
tCLKT | TCLK input transition time (see Figure 6) | 3 | 6 | ns | ||
tJIT | TCLK input jitter(1) | 33 | ps (RMS) |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
tLLHT | LVDS Low-to-High transition time | RL = 100 Ω, CL = 10 pF to GND, and VODSEL = L (see Figure 5) | 0.6 | ns | ||
tLHLT | LVDS High-to-Low transition time | RL = 100 Ω, CL = 10 pF to GND, and VODSEL = L (see Figure 5) | 0.6 | ns | ||
tDIS | DIN[23:0] setup to TCLK | RL = 100 Ω and CL = 10 pF to GND(1) | 5 | ns | ||
tDIH | DIN[23:0] hold from TCLK | RL = 100 Ω and CL = 10 pF to GND(1) | 5 | ns | ||
tHZD | DOUT± HIGH to TRI-STATE delay | RL = 100 Ω and CL = 10 pF to GND (see Figure 8)(2) |
15 | ns | ||
tLZD | DOUT± LOW to TRI-STATE delay | RL = 100 Ω and CL = 10 pF to GND (see Figure 8)(2) |
15 | ns | ||
tZHD | DOUT± TRI-STATE to HIGH delay | RL = 100 Ω and CL = 10 pF to GND (see Figure 8)(2) |
200 | ns | ||
tZLD | DOUT± TRI-STATE to LOW delay | RL = 100 Ω and CL = 10 pF to GND (see Figure 8)(2) |
200 | ns | ||
tPLD | Serializer PLL lock time | RL = 100 Ω (see Figure 9) | 10 | ms | ||
tSD | Serializer delay | RL = 100 Ω, VODSEL = L, and TRFB = H (see Figure 10) |
3.5T + 2.85 | 3.5T + 10 | ns | |
RL = 100 Ω, VODSEL = L, and TRFB = L (see Figure 10) |
3.5T + 2.85 | 3.5T + 10 | ns | |||
TxOUT_E_O | TxOUT_Eye_Opening (respect to ideal) | 5 MHz to 35 MHz (see Figure 11)(1)(3)(4) | 0.75 | UI(5) |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
tRCP | Receiver out clock period | tRCP = tTCP and RCLK pin(1) | 28.6 | 200 | ns | ||
tRDC | RCLK duty cycle | RCLK pin | 45% | 50% | 55% | ||
tCLH | LVCMOS low-to-high transition time | CL = 8 pF (lumped load); ROUT[23:0], LOCK, and RCLK pins (see Figure 13)(1) | 2.5 | 3.5 | ns | ||
tCHL | LVCMOS high-to-low transition time | CL = 8 pF (lumped load); ROUT[23:0], LOCK, and RCLK pins (see Figure 13)(1) | 2.5 | 3.5 | ns | ||
tROS | ROUT[7:0] setup data to RCLK (Group 1) | ROUT[7:0] pins (see Figure 17) | 0.4 × tRCP | (29/56) × tRCP | ns | ||
tROH | ROUT[7:0] hold data to RCLK (Group 1) | ROUT[7:0] pins (see Figure 17) | 0.4 × tRCP | (27/56) × tRCP | ns | ||
tROS | ROUT[15:8] setup data to RCLK (Group 2) | ROUT[15:8] and LOCK pins (see Figure 17) | 0.4 × tRCP | 0.5 × tRCP | ns | ||
tROH | ROUT[15:8] hold data to RCLK (Group 2) | ROUT[15:8] and LOCK pins (see Figure 17) | 0.4 × tRCP | 0.5 × tRCP | ns | ||
tROS | ROUT[23:16] setup data to RCLK (Group 3) | ROUT[23:16] pins (see Figure 17) |
0.4 × tRCP | (27/56) × tRCP | ns | ||
tROH | ROUT[23:16] hold data to RCLK (Group 3) | ROUT[23:16] pins (see Figure 17) |
0.4 × tRCP | (29/56) × tRCP | ns | ||
tHZR | HIGH to TRI-STATE delay | ROUT[23:0], RCLK, and LOCK pins (see Figure 15) | 3 | 10 | ns | ||
tLZR | LOW to TRI-STATE delay | ROUT[23:0], RCLK, and LOCK pins | 3 | 10 | ns | ||
tZHR | TRI-STATE to HIGH delay | ROUT[23:0], RCLK, and LOCK pins | 3 | 10 | ns | ||
tZLR | TRI-STATE to LOW delay | ROUT[23:0], RCLK, and LOCK pins | 3 | 10 | ns | ||
tDD | Deserializer delay | RCLK pin (see Figure 14) | [4+(3/56)]T + 5.9 | [4+(3/56)]T + 14 | ns | ||
tDRDL | Deserializer PLL lock time from power down | See Figure 16(1)(2) | 5 MHz | 5 | 50 | ms | |
35 MHz | 5 | 50 | |||||
RxIN_TOL_L | Receiver input tolerance (left) | 5 MHz to 35 MHz (see Figure 18)(1)(3) |
0.25 | UI(4) | |||
RxIN_TOL_R | Receiver input tolerance (right) | 5 MHz to 35 MHz (see Figure 18)(1)(3) |
0.25 | UI(4) |