SLVS582J April   2006  – August 2024 LP2950 , LP2951

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics (Both Legacy and New Chip)
    6. 5.6 Timing Requirements
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagrams
    3. 6.3 Feature Description
      1. 6.3.1 Output Enable
      2. 6.3.2 Dropout Voltage
      3. 6.3.3 Current Limit
      4. 6.3.4 Undervoltage Lockout (UVLO)
      5. 6.3.5 Thermal Shutdown
    4. 6.4 Device Functional Modes
      1. 6.4.1 Shutdown Mode
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Reverse Current
      2. 7.1.2 Input and Output Capacitor Requirements
      3. 7.1.3 Estimating Junction Temperature
      4. 7.1.4 Power Dissipation (PD)
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
        1. 7.2.1.1 Recommended Capacitor Types
          1. 7.2.1.1.1 Recommended Capacitors for the Legacy Chip
          2. 7.2.1.1.2 Recommended Capacitors for the New Chip
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Feedback Resistor Selection
        2. 7.2.2.2 Feedforward Capacitor
      3. 7.2.3 Application Curve
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Device Nomenclature
    4. 8.4 Documentation Support
      1. 8.4.1 Related Documentation
    5. 8.5 Support Resources
    6. 8.6 Trademarks
    7. 8.7 Electrostatic Discharge Caution
    8. 8.8 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.3.2 Dropout Voltage

Dropout voltage (VDO) is defined as the input voltage minus the output voltage (VIN – VOUT) at the rated output current (IRATED), where the pass transistor is fully on. IRATED is the maximum IOUT listed in the Section 5.3 table. The pass transistor is in the ohmic or triode region of operation, and acts as a switch. The dropout voltage indirectly specifies a minimum input voltage greater than the nominal programmed output voltage at which the output voltage is expected to stay in regulation. If the input voltage falls to less than the nominal output regulation, then the output voltage falls as well.

For a CMOS regulator, the dropout voltage is determined by the drain-source on-state resistance (RDS(ON)) of the pass transistor. Therefore, if the linear regulator operates at less than the rated current, the dropout voltage for that current scales accordingly. The following equation calculates the RDS(ON) of the device.

Equation 1. LP2950 LP2951