JAJSC60F April   2016  – June 2024 THS6212

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics VS = 12 V
    6. 5.6 Electrical Characteristics VS = 28 V
    7. 5.7 Timing Requirements
    8. 5.8 Typical Characteristics: VS = 12 V
    9. 5.9 Typical Characteristics: VS = 28 V
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Output Voltage and Current Drive
      2. 6.3.2 Driving Capacitive Loads
      3. 6.3.3 Distortion Performance
      4. 6.3.4 Differential Noise Performance
      5. 6.3.5 DC Accuracy and Offset Control
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Wideband Current-Feedback Operation
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curves
      2. 7.2.2 Dual-Supply Downstream Driver
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
          1. 7.2.2.2.1 Line Driver Headroom Requirements
          2. 7.2.2.2.2 Computing Total Driver Power for Line-Driving Applications
    3. 7.3 Best Design Practices
    4. 7.4 Power Supply Recommendations
    5. 7.5 Layout
      1. 7.5.1 Layout Guidelines
      2. 7.5.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 ドキュメントの更新通知を受け取る方法
    3. 8.3 サポート・リソース
    4. 8.4 Trademarks
    5. 8.5 静電気放電に関する注意事項
    6. 8.6 用語集
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • RHF|24
サーマルパッド・メカニカル・データ
発注情報

9 Revision History

Changes from Revision E (May 2021) to Revision F (June 2024)

  • 「概要」の「パッケージ情報」表を更新Go
  • Deleted maximum junction temperature continuous operation, long-term reliability from Absolute Maximum Ratings Go

Changes from Revision D (November 2019) to Revision E (May 2021)

  • ドキュメント全体にわたって表、図、相互参照の採番方法を更新Go
  • 「特長」で中バイアス モードの値を 17.7mA から 17.5mA に変更Go
  • 「特長」で低バイアス モードの値を 12.2mA から 11.9mA に変更Go
  • 「特長」で電圧ノイズの値を 2.7nV/√Hz から 2.5nV/√Hz に変更Go
  • 「特長」で反転電流ノイズの値を 17pA/√Hz から 18pA/√Hz に変更Go
  • 「特長」で非反転電流ノイズの値を 1.2pA/√Hz から 1.4pA/√Hz に変更Go
  • 「特長」で HD2 歪みを -100dBc から -86dBc に変更Go
  • 「特長」で HD3 歪みを -89dBc から -101dBc に変更Go
  • 「特長」で出力電流を 416mA 超から 665mA 超に変更Go
  • 「特長」で出力スイングを 43.2Vpp から 49Vpp に変更Go
  • 「特長」で帯域幅を 150MHz から 205MHz に変更Go
  • 「特長」で PSRR を 50dB から 55dB 超に変更Go
  • 「特長」で過熱保護を 170℃から 175℃に変更Go
  • 差動歪みを HD2 に変更し、「概要」の値を更新Go
  • 「概要」の出力スイングを 43.2Vpp から 49Vpp に変更Go
  • 「概要」の電源を ± 12V から 28V に変更Go
  • 「概要」の駆動電流を 416mA から 650mA に変更Go
  • ドキュメントから YS ボンド パッドのパッケージを削除Go
  • THS6212 図を使用した代表的なライン ドライバ回路を変更Go
  • Removed YS die package and Bond Pad Functions tableGo
  • Deleted Output current, IO from Absolute Maximum Ratings Go
  • Added Bias control pin voltage in Absolute Maximum Ratings Go
  • Added Input voltage to all pins except VS+, VS-, and BIAS control in Absolute Maximum Ratings Go
  • Added Input current limit in Absolute Maximum Ratings Go
  • Changed Maximum junction, TJ from 130 C to 125 C in Absolute Maximum Ratings Go
  • Deleted ESD MM in ESD Ratings Go
  • Changed Operating junction temperature from 130°C to 125°C in Recommended Operating Conditions Go
  • Added Minimum ambient operating air temperature spec in Recommended Operating Conditions Go
  • Changed RΘJA from 33.2 °C/W to 42.3 °C/W in Thermal Information Go
  • Changed RΘJC(Top) from 31.7 °C/W to 32.8 °C/W in Thermal Information Go
  • Changed RΘJB from 11.3 °C/W to 20.9 °C/W in Thermal Information Go
  • Changed ψJT from 0.4 °C/W to 3.8 °C/W in Thermal Information Go
  • Changed ψJB from 11.3 °C/W to 20.9 °C/W in Thermal Information Go
  • Changed ψJC(bot) from 3.9 °C/W to 9.5 °C/W in Thermal Information Go
  • Added Electrical Characteristics: VS = 12 V Go
  • Deleted Electrical Characteristics: VS = ±6 V Go
  • Added Electrical Characteristics: VS = 28 V Go
  • Changed tON from 1µs to 25ns in Timing Requirements Go
  • Changed tOFF from 1µs to 275ns in Timing Requirements Go
  • Added Typical Characteristics: VS = 12 VGo
  • Deleted Typical Characteristics: VS = ±6 V (Full Bias)Go
  • Deleted Typical Characteristics: VS = ±6 V (Mid Bias)Go
  • Deleted Typical Characteristics: VS = ±6 V (Low Bias)Go
  • Added Typical Characteristics: VS = 28 VGo
  • Deleted Typical Characteristics: VS = ±12 V (Full Bias)Go
  • Deleted Typical Characteristics: VS = ±12 V (Mid Bias)Go
  • Deleted Typical Characteristics: VS = ±12 V (Low Bias)Go
  • Changed output swing from 43.2 Vpp to 49 Vpp in Overview sectionGo
  • Changed current drive from 416 mA to 650 mA in Overview sectionGo
  • Changed thermal protection junction temperature from 170°C to 175°C in Overview sectionGo
  • Deleted Output Current and Voltage sectionGo
  • Added Output Voltage and Current Drive sectionGo
  • Changed referenced figures for RS versus capacitive load in Driving Capacitive Loads sectionGo
  • Changed ±12-V supplies to 28-V supply in Distortion Performance Go
  • Changed ±6-V supplies to 12-V supply in Distortion Performance Go
  • Updated noise evaluation in Differential Noise Performance Go
  • Added RS = 50 Ω in Differential Noise Performance Go
  • Changed 38.9 nV/√Hz calculation to 53.3 nV/√Hz in Differential Noise Performance Go
  • Changed 7 nV/√Hz calculation to 6.5 nV/√Hz in Differential Noise Performance Go
  • Changed output offset calculation to typical rather than worst case in DC Accuracy and Offset Control sectionGo
  • Changed quiescent current value from 23 mA to 19.5 mA in Wideband Current-Feedback Operation sectionGo
  • Changed swing from 1.9 V from either rail to 49 Vpp in Wideband Current-Feedback Operation sectionGo
  • Changed current drive from 416 mA to 650 mA inWideband Current-Feedback Operation sectionGo
  • Changed ± 6 V supply to 28 V supply inWideband Current-Feedback Operation sectionGo
  • Changed 140 MHz bandwidth to 285 MHz inWideband Current-Feedback Operation sectionGo
  • Changed Noninverting Differential I/O Amplifierfigure inWideband Current-Feedback Operation sectionGo
  • Changed Frequency Response and Harmonic Distortion figures in Application Curves sectionGo
  • Changed Dual-Supply Downstream Driver figureGo
  • Changed supply voltages to ±14 V in Line Driver Headroom Requirements sectionGo
  • Changed quiescent current value from 23 mA to 19.5 mA and ±12 V to ±14 V in Computing Total Driver Power for Line-Driving Applications Go
  • Changed 23 mA to 19.5 mA, 24 V to 28 V and 1003 mW to 11 mW in Computing Total Driver Power for Line-Driving Applications Go
  • Changed supply range from "±5 V to ±14 V" to "10 V to 28 V" in Power Supply Recommendations sectionGo
  • Changed referenced figures for RS versus capacitive load in Driving Capacitive Loads sectionGo
  • Deleted Wafer and Die Information sectionGo
  • Changed ±12-V to 28-V in Layout Guidelines sectionGo

Changes from Revision C (May 2016) to Revision D (November 2019)

  • 2 つの「特長」項目を最後に追加Go
  • Added GND pin voltage spec in Recommended Operating Conditions Go
  • Added last paragraph to Overview section Go
  • Changed Dual-Supply Downstream Driver figureGo

Changes from Revision B (May 2018) to Revision C (July 2018)

  • ドキュメントに YS ボンド パッドのパッケージを追加Go
  • Added YS die package and Bond Pad Functions table Go
  • Added Wafer and Die Information sectionGo

Changes from Revision A (March 2017) to Revision B (May 2018)

  • 「特長」で完全バイアス モードの値を 21mA から 23mA に変更Go
  • 「特長」で中バイアス モードの値を 16.2 mA から 17.7 mA に変更Go
  • 「特長」で低バイアス モードの値を 11.2 mA から 12.2 mA に変更Go
  • Added "With Exposed Thermal Pad" to pinout drawing description to Pin Configuration and Functions section Go
  • Changed quiescent current value from 21 mA to 23 mA in Wideband Current-Feedback Operation sectionGo
  • Changed quiescent current value from 21 mA to 23 mA in Computing Total Driver Power for Line-Driving Applications Go
  • Changed 21 mA to 23 mA and 955 mW to 1003 mW in Computing Total Driver Power for Line-Driving Applications Go
  • Changed Board Layout Guidelines section title to Layout Guidelines to align with standardsGo

Changes from Revision * (May 2016) to Revision A (March 2017)

  • ドキュメント タイトルを「THS6212 差動、ラインドライバ アンプ」から「THS6212 差動広帯域 PLC ライン ドライバ アンプ」に変更 Go
  • 「概要」の 2 文目を「ライン ドライバ アプリケーション (広帯域幅の電力線通信など)」から「広帯域の電力線通信 (PLC) ライン ドライバ アプリケーション」に変更Go