SLVSAU6H June   2011  – April 2016 TPS2000C , TPS2001C , TPS2041C , TPS2051C , TPS2061C , TPS2065C , TPS2065C-2 , TPS2068C , TPS2069C , TPS2069C-2

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information: SOT-23
    5. 7.5 Thermal Information: MSOP-PowerPAD
    6. 7.6 Electrical Characteristics: TJ = TA = 25°C
    7. 7.7 Electrical Characteristics: -40°C ≤ TJ ≤ 125°C
    8. 7.8 Timing Requirements: TJ = TA = 25°C
    9. 7.9 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout
      2. 8.3.2 Enable
      3. 8.3.3 Internal Charge Pump
      4. 8.3.4 Current Limit
      5. 8.3.5 FLT
      6. 8.3.6 Output Discharge
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input and Output Capacitance
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Power Dissipation and Junction Temperature
  12. 12Device and Documentation Support
    1. 12.1 Related Links
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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発注情報

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)(3)
MIN MAX UNIT
Voltage on IN, OUT, EN or EN, FLT (4) –0.3 6 V
Voltage from IN to OUT –6 6 V
Maximum junction temperature, TJ Internally Limited
Storage temperature, Tstg –60 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Absolute maximum ratings apply over recommended junction temperature range.
(3) Voltages are with respect to GND unless otherwise noted.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
IEC 61000-4-2 contact discharge ±8000
IEC 61000-4-2 air-gap discharge(3) ±15000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(3) VOUT was surged on a PCB with input and output bypassing per the Typical Application Diagram on the first page (except input capacitor was 22 µF) with no device failures.

7.3 Recommended Operating Conditions

MIN NOM MAX UNIT
VIN Input voltage, IN 4.5 5.5 V
VEN Input voltage, EN or EN 0 5.5 V
VIH High-level input voltage, EN or EN 2 V
VIL Low-level input voltage, EN or EN 0.7 V
IOUT Continuous output current, OUT(1) TPS2041C and TPS2051C 0.5 A
TPS2061C, TPS2065C and TPS2065C-2 1
TPS2068C, TPS2069C and TPS2069C-2 1.5
TPS2000C and TPS2001C 2
TJ Operating junction temperature –40 125 °C
IFLT Sink current into FLT 0 5 mA
(1) Some package and current rating may request an ambient temperature derating of 85°C.

7.4 Thermal Information: SOT-23

THERMAL METRIC(1) TPS20xxC, TPS20xxC-2 UNIT
DBV (SOT-23)(2) DBV (SOT-23)(3)
5 PINS 5 PINS
RθJA Junction-to-ambient thermal resistance 224.9 220.4 °C/W
RθJCtop Junction-to-case (top) thermal resistance 95.2 89.7 °C/W
RθJB Junction-to-board thermal resistance 51.4 46.9 °C/W
ψJT Junction-to-top characterization parameter 6.6 5.2 °C/W
ψJB Junction-to-board characterization parameter 50.3 46.2 °C/W
RθJCbot Junction-to-case (bottom) thermal resistance — — °C/W
RθJACustom See Power DIssipation and Junction Temperature 139.3 134.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
(2) Rated at 0.5 A or 1 A.
(3) Rated at 1.5 A or 2 A.

7.5 Thermal Information: MSOP-PowerPAD

THERMAL METRIC(1) TPS20xxC, TPS20xxC-2 UNIT
DGN
(MSOP-PowerPAD)(2)		 DGN
(MSOP-PowerPAD)(3)		 DGK
(VSSOP)(4)
8 PINS 8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 72.1 67.1 205.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 87.3 80.8 94.3 °C/W
RθJB Junction-to-board thermal resistance 42.2 37.2 126.9 °C/W
ψJT Junction-to-top characterization parameter 7.3 5.6 24.7 °C/W
ψJB Junction-to-board characterization parameter 42 36.9 125.2 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 39.2 32.1 — °C/W
RθJACustom See Power DIssipation and Junction Temperature 66.5 61.3 110.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
(2) Rated at 0.5 A or 1 A.
(3) Rated at 1.5 A or 2 A.
(4) Rated at 2 A.

7.6 Electrical Characteristics: TJ = TA = 25°C

Unless otherwise noted: VIN = 5 V, VEN = VIN or VEN = GND, IOUT = 0 A. See Device Comparison Table for the rated current of each part number. Parametrics over a wider operational range are shown in Electrical Characteristics: –40°C ≤ TJ ≤ 125°C(1).
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
POWER SWITCH
RDS(on) Input – output resistance 0.5-A rated output, 25°C DBV 97 110 mΩ
0.5-A rated output,
–40°C ≤ (TJ , TA) ≤ 85°C		 DBV 96 130 mΩ
1-A rated output, 25°C DBV 96 110 mΩ
DGN 86 100
1-A rated output,
–40°C ≤ (TJ , TA) ≤ 85°C		 DBV 96 130 mΩ
DGN 86 120
1.5-A rated output, 25°C DBV 76 91 mΩ
DGN 69 84 mΩ
1.5-A rated output,
–40°C ≤ (TJ , TA) ≤ 85°C 		DBV 76 106 mΩ
DGN 69 98 mΩ
2-A rated output, 25°C DGN, DGK 72 84 mΩ
2-A rated output, –40°C ≤ (TJ , TA) ≤ 85°C DGN, DGK 72 98 mΩ
CURRENT LIMIT
IOS(3) Current limit,
See Figure 6		 0.5-A rated output TPS20xxC 0.67 0.85 1.01 A
1-A rated output TPS20xxC 1.3 1.55 1.8
TPS20xxC-2 1.18 1.53 1.88
1.5-A rated output TPS20xxC 1.7 2.15 2.5
TPS20xxC-2 1.71 2.23 2.75
2-A rated output TPS20xxC 2.35 2.9 3.4
SUPPLY CURRENT
ISD Supply current, switch disabled IOUT = 0 A 0.01 1 µA
–40°C ≤ (TJ , TA) ≤ 85°C, VIN = 5.5 V, IOUT = 0 A 2
ISE Supply current, switch enabled IOUT = 0 A 60 70 µA
–40°C ≤ (TJ , TA) ≤ 85°C, VIN = 5.5 V, IOUT = 0 A 85
Ilkg Leakage current VOUT = 0 V, VIN = 5 V, disabled, measure IVIN TPS20xxC-2 0.05 1 µA
–40°C ≤ (TJ , TA) ≤ 85°C, VOUT = 0 V,
VIN = 5 V, disabled, measure IVIN		 2
IREV Reverse leakage current VOUT = 5 V, VIN = 0 V, measure IVOUT 0.1 1 µA
–40°C ≤ (TJ , TA) ≤ 85°C, VOUT = 5 V, VIN = 0 V, measure IVOUT 5
OUTPUT DISCHARGE
RPD Output pulldown resistance(2) VIN = VOUT = 5 V, disabled TPS20xxC 400 470 600 Ω
(1) Pulsed testing techniques maintain junction temperature approximately equal to ambient temperature
(2) These parameters are provided for reference only, and do not constitute part of TI's published device specifications for purposes of TI's product warranty.
(3) See Current Limit section for explanation of this parameter.

7.7 Electrical Characteristics: –40°C ≤ TJ ≤ 125°C

Unless otherwise noted:4.5 V ≤ VIN ≤ 5.5 V, VEN = VIN or VEN = GND, IOUT = 0 A, typical values are at 5 V and 25°C. See Device Comparison Table for the rated current of each part number.
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
POWER SWITCH
RDS(ON) Input – output resistance 0.5-A rated output DBV 97 154 mΩ
1-A rated output DBV 96 154 mΩ
DGN 86 140
1.5-A rated output DBV 76 121 mΩ
DGN 69 112 mΩ
2-A rated output DGN, DGK 72 112 mΩ
ENABLE INPUT (EN or EN)
Threshold Input rising 1 1.45 2 V
Hysteresis 0.07 0.13 0.2 V
Leakage current (VEN or VEN) = 0 V or 5.5 V –1 0 1 µA
CURRENT LIMIT
IOS(3) Current limit,
See Figure 23		 0.5-A rated output TPS20xxC 0.65 0.85 1.05 A
1-A rated output TPS20xxC 1.2 1.55 1.9
TPS20xxC-2 1.1 1.53 1.96
1.5-A rated output TPS20xxC 1.6 2.15 2.7
TPS20xxC-2 1.6 2.23 2.86
2-A rated output TPS20xxC 2.3 2.9 3.6
tIOS Short-circuit response time(2) VIN = 5 V (see Figure 6),
One-half full load → RSHORT = 50 mΩ,
Measure from application to when current falls below 120% of final value		 2 µs
SUPPLY CURRENT
ISD Supply current, switch disabled IOUT = 0 A 0.01 10 µA
ISE Supply current, switch enabled IOUT = 0 A 65 90 µA
Ilkg Leakage current VOUT = 0 V, VIN = 5 V, disabled,
measure IVIN 		TPS20XXC-2 0.05 µA
IREV Reverse leakage current VOUT = 5.5 V, VIN = 0 V, measure IVOUT 0.2 20 µA
UNDERVOLTAGE LOCKOUT
VUVLO Rising threshold VIN↑ 3.5 3.75 4 V
Hysteresis(2) VIN↓ 0.14 V
FLT
Output low voltage, FLT IFLT = 1 mA 0.2 V
OFF-state leakage VFLT = 5.5 V 1 µA
tFLT FLT deglitch FLT assertion or deassertion deglitch 6 9 12 ms
OUTPUT DISCHARGE
RPD Output pulldown resistance VIN = 4 V, VOUT = 5 V, disabled TPS20XXC 350 560 1200 Ω
VIN = 5 V, VOUT = 5 V, disabled TPS20XXC 300 470 800
THERMAL SHUTDOWN
Rising threshold (TJ) In current limit 135 °C
Not in current limit 155
Hysteresis (2) 20
(1) Pulsed testing techniques maintain junction temperature approximately equal to ambient temperature
(2) These parameters are provided for reference only, and do not constitute part of TI's published device specifications for purposes of TI's product warranty.
(3) See Current Limit for explanation of this parameter.

7.8 Timing Requirements: TJ = TA = 25°C

MIN NOM MAX UNIT
ENABLE INPUT (EN or EN)
tON Turnon time VIN = 5 V, CL = 1 µF, RL = 100 Ω, EN ↑ or EN ↓.
See Figure 1, Figure 3, and Figure 4		 0.5-A and 1-A Rated 1 1.4 1.8 ms
1.5-A and 2-A Rated 1.2 1.7 2.2
tOFF Turnoff time VIN = 5 V, CL = 1 µF, RL = 100 Ω, EN ↓ or EN ↑.
See Figure 1, Figure 3, and Figure 4		 0.5-A and 1-A Rated 1.3 1.65 2 ms
1.5-A and 2-A Rated 1.7 2.1 2.5
tR Rise time, output CL = 1 µF, RL = 100 Ω, VIN = 5 V. See Figure 2 0.5-A and 1-A Rated 0.4 0.55 0.7 ms
1.5-A and 2-A Rated 0.5 0.7 1
tF Fall time, output CL = 1 µF, RL = 100 Ω, VIN = 5 V. See Figure 2 0.5-A and 1-A Rated 0.25 0.35 0.45 ms
1.-5A and 2-A Rated 0.3 0.43 0.55
TPS2000C TPS2001C TPS2041C TPS2051C TPS2061C TPS2065C TPS2065C-2 TPS2068C TPS2069C TPS2069C-2 tst_load_lvsau6.gif Figure 1. Output Rise and Fall Test Load
TPS2000C TPS2001C TPS2041C TPS2051C TPS2061C TPS2065C TPS2065C-2 TPS2068C TPS2069C TPS2069C-2 pwr_on_off_lvsau6.gif Figure 2. Power-On and Power-Off Timing
TPS2000C TPS2001C TPS2041C TPS2051C TPS2061C TPS2065C TPS2065C-2 TPS2068C TPS2069C TPS2069C-2 enable_t_hi_lvsau6.gif Figure 3. Enable Timing, Active High Enable
TPS2000C TPS2001C TPS2041C TPS2051C TPS2061C TPS2065C TPS2065C-2 TPS2068C TPS2069C TPS2069C-2 enable_t_low_lvsau6.gif Figure 4. Enable Timing, Active Low Enable
TPS2000C TPS2001C TPS2041C TPS2051C TPS2061C TPS2065C TPS2065C-2 TPS2068C TPS2069C TPS2069C-2 short_cir_lvsau6.gif Figure 5. Output Short-Circuit Parameters
TPS2000C TPS2001C TPS2041C TPS2051C TPS2061C TPS2065C TPS2065C-2 TPS2068C TPS2069C TPS2069C-2 cur_limit_lvsau6.gif Figure 6. Output Characteristic Showing Current Limit

7.9 Typical Characteristics

TPS2000C TPS2001C TPS2041C TPS2051C TPS2061C TPS2065C TPS2065C-2 TPS2068C TPS2069C TPS2069C-2 G019_Deglitch_vs_Temp.png
Figure 7. Deglitch Period (TFLT) vs Temperature
TPS2000C TPS2001C TPS2041C TPS2051C TPS2061C TPS2065C TPS2065C-2 TPS2068C TPS2069C TPS2069C-2 G021_Ios_vs_Tj.png
Figure 9. Short Circuit Current (IOS) vs Temperature
TPS2000C TPS2001C TPS2041C TPS2051C TPS2061C TPS2065C TPS2065C-2 TPS2068C TPS2069C TPS2069C-2 G023_Isd_vs_Tj.png
Figure 11. Disabled Supply Current (ISD) vs Temperature
TPS2000C TPS2001C TPS2041C TPS2051C TPS2061C TPS2065C TPS2065C-2 TPS2068C TPS2069C TPS2069C-2 G025_Irev_vs_Vout.png
Figure 13. Reverse Leakage Current (IREV) vs Output Voltage
TPS2000C TPS2001C TPS2041C TPS2051C TPS2061C TPS2065C TPS2065C-2 TPS2068C TPS2069C TPS2069C-2 G027_Ise_vs_Vin.png
Figure 15. Enabled Supply Current (ISE) vs Input Voltage
TPS2000C TPS2001C TPS2041C TPS2051C TPS2061C TPS2065C TPS2065C-2 TPS2068C TPS2069C TPS2069C-2 G029_tr_vs_Tj.png
Figure 17. Output Rise Time (TR) vs Temperature
TPS2000C TPS2001C TPS2041C TPS2051C TPS2061C TPS2065C TPS2065C-2 TPS2068C TPS2069C TPS2069C-2 G031_t_recovery_vs_Ipk.png
Figure 19. Recovery vs Current Peak
TPS2000C TPS2001C TPS2041C TPS2051C TPS2061C TPS2065C TPS2065C-2 TPS2068C TPS2069C TPS2069C-2 G020_Idscg_vs_Vout.png
Figure 8. Output Discharge Current vs Output Voltage
TPS2000C TPS2001C TPS2041C TPS2051C TPS2061C TPS2065C TPS2065C-2 TPS2068C TPS2069C TPS2069C-2 G022_Irev_vs_Tj.png
Figure 10. Reverse Leakage Current (IREV) vs Temperature
TPS2000C TPS2001C TPS2041C TPS2051C TPS2061C TPS2065C TPS2065C-2 TPS2068C TPS2069C TPS2069C-2 G024_Isd_vs_Vin.png
Figure 12. Disabled Supply Current (ISD) vs Input Voltage
TPS2000C TPS2001C TPS2041C TPS2051C TPS2061C TPS2065C TPS2065C-2 TPS2068C TPS2069C TPS2069C-2 G026_Ise_vs_Tj.png
Figure 14. Enabled Supply Current (ISE) vs Temperature
TPS2000C TPS2001C TPS2041C TPS2051C TPS2061C TPS2065C TPS2065C-2 TPS2068C TPS2069C TPS2069C-2 G028_tf_vs_Tj.png
Figure 16. Output Fall Time (TF) vs Temperature
TPS2000C TPS2001C TPS2041C TPS2051C TPS2061C TPS2065C TPS2065C-2 TPS2068C TPS2069C TPS2069C-2 G030_Rdson_vs_Tj.png
Figure 18. Input-Output Resistance (RDS(ON)) vs Temperature