JAJSP92A February   2023  – November 2023 TPS62A01-Q1 , TPS62A01A-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Save Mode
      2. 7.3.2 100% Duty Cycle Low Dropout Operation
      3. 7.3.3 Soft Start
      4. 7.3.4 Switch Current Limit and Short-Circuit Protection (HICCUP)
      5. 7.3.5 Undervoltage Lockout
      6. 7.3.6 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Enable and Disable
      2. 7.4.2 Power Good
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Setting the Output Voltage
        2. 8.2.2.2 Output Filter Design
        3. 8.2.2.3 Input and Output Capacitor Selection
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 サード・パーティ製品に関する免責事項
    2. 9.2 ドキュメントの更新通知を受け取る方法
    3. 9.3 サポート・リソース
    4. 9.4 Trademarks
    5. 9.5 静電気放電に関する注意事項
    6. 9.6 用語集
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.5 Electrical Characteristics

TJ = –40°C to +150°C, VIN = 2.5 V to 5.5 V. Typical values are at TJ = 25°C and VIN = 5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
IQ(VIN) VIN quiescent current Non-switching, VEN = High, VFB = 610 mV 23 µA
ISD(VIN) VIN shutdown supply current VEN = Low 0.01 4 µA
UVLO
VUVLO(R) VIN UVLO rising threshold VIN rising 2.3 2.4 2.5 V
VUVLO(F) VIN UVLO falling threshold VIN falling 2.2 2.3 2.4 V
ENABLE
VEN(R) High-level input voltage (EN) EN rising, enable switching 1.2 V
VEN(F) Low-level input voltage (EN) EN falling, disable switching 0.4 V
VEN(LKG) EN Input leakage current VEN = 5 V 250 nA
REFERENCE VOLTAGE
VFB FB voltage PWM mode 591 600 609 mV
IFB(LKG) FB input leakage current VFB = 0.6 V 100 nA
SWITCHING FREQUENCY
fSW(FCCM) Switching frequency, FPWM operation VIN = 5 V; VOUT = 1.8 V 2400 kHz
STARTUP
Internal fixed soft-start time From EN = High to VFB = 0.56 V 1 ms
POWER STAGE
RDSON(HS) High-side MOSFET on-resistance  VIN = 5 V 100 mΩ
RDSON(LS) Low-side MOSFET on-resistance VIN = 5 V 67 mΩ
OVERCURRENT PROTECTION
IHS(OC) High-side peak current limit 1.5 1.8 A
ILS(OC) Low-side valley current limit 1.8 A
POWER GOOD
VPGTH Power Good threshold PG low, FB falling 93.5 %
VPGTH Power Good threshold PG high, FB rising 96 %
PG delay falling 35 µs
PG delay rising 10 µs
IPG(LKG) PG pin Leakage current when open drain output is high VPG = 5 V 100 nA
PG pin output low-level voltage IPG = 1 mA 400 mV
OUTPUT DISCHARGE
Output discharge current on SW pin VIN = 3 V, VOUT = 2.0 V 76 mA
THERMAL SHUTDOWN
TJ(SD) Thermal shutdown threshold Temperature rising 170 °C
TJ(HYS) Thermal shutdown hysteresis 20 °C