4 改訂履歴
Changes from L Revision (January 2015) to M Revision
- 最新のデータシートおよび翻訳標準に合わせてデータシートを更新Go
- Changed ドキュメントのタイトルで「超低ノイズ」を「低ノイズ」にGo
- Changed 「特長」、「概要」、「アプリケーション情報」セクションで、低IQを46μAから45μAにGo
- Changed 「特長」箇条書きの「標準」を「セラミック」にGo
- Changed 「特長」箇条書きの6ピン・パッケージを「SON」から「WSON」にGo
- Deleted 「アプリケーション」セクションからプリンタ、WiFi®、WiMaxモジュール、携帯電話、スマートフォン、マイクロプロセッサの電源をGo
- Added 「アプリケーション」セクションにDC/DC後のリップル・フィルタリング、IPネットワーク・カメラ、マクロ基地局、サーモスタットをGo
- Changed 「概要」セクションでTAをTJにGo
- Changed 「概要」セクションで6ピンのパッケージを「SON」から「WSON」にGo
- Changed 「製品情報」表のパッケージをVSON (6)からWSON (6)にGo
- Changed 6-pin DRB package designator from "VSON" to "SON" in Pin Configurations and Functions section Go
- Changed 6-pin DRV package designator from "VSON" to "WSON" in Pin Configurations and Functions section Go
- Added "feedback resistor" parameter to Recommended Operating Conditions tableGo
- Changed DRV package designator from "VSON" to "WSON" in Thermal Information table Go
- Changed DRB package designator from "VSON" to "SON" in Thermal Information table Go
- Changed TPS735 Ground Pin Current (Disable) vs Temperature in Typical Characteristics sectionGo
- Changed TPS735 Dropout Voltage vs Output Current in Typical Characteristics sectionGo
- Updated Equation 1 Go
- Changed x-axis scale from "10 ms/div" to "10 µs/div" in Figure 17Go
- Changed x-axis scale from "10 ms/div" to "10 µs/div" in Figure 18Go
- Changed VOUT starting value to 0 V in Figure 19Go
- Updated Equation 2 Go
- Updated Equation 3 Go
- Changed DRV package designator from "SON" to "WSON" in Measuring Points for TT and TBGo
- Deleted 「関連資料」セクションのサーマル情報ドキュメントへの参照Go
Changes from K Revision (August, 2013) to L Revision
- Added 「ESD定格」表、「機能説明」セクション、「デバイスの機能モード」セクション、「アプリケーションと実装」セクション、「電源に関する推奨事項」セクション、「レイアウト」セクション、「デバイスおよびドキュメントのサポート」セクション、「メカニカル、パッケージ、および注文情報」セクションGo
- Added 「特長」箇条書きの最初の項目Go
- Changed 「特長」箇条書きの4番目の項目を「1.2Vの固定出力」にGo
- Changed 「特長」箇条書きの8番目の項目Go
- Changed 「特長」箇条書きの最後の項目Go
- Changed 「アプリケーション」箇条書きの最後の項目Go
- Changed Pin Configuration and Functions section; updated table format and pin descriptions to meet new standards Go
- Changed CNR value notation from 0.01 µF to 10 nF throughout Electrical CharacteristicsGo
- Changed feedback voltage parameter values and measured test conditions Go
- Changed output current limit maximum specified value Go
- Changed power-supply rejection ratio typical specified values for 100 Hz, 10 kHz, and 100 kHz frequency test conditions Go
- Added note (1) to Figure 1Go
- Changed y-axis title for Figure 6Go
- Changed y-axis title for Figure 7Go
- Changed footnote for Figure 13Go
- Changed reference to noise-reduction capacitor (CNR) to feed-forward capacitor (CFF) in Transient ResponseGo
- Changed noise-reduction capacitor to feed-forward capacitor in Figure 16Go
- Changed references to "noise-reduction capacitor" (CNR) to "feed-forward capacitor" (CFF) and section title from "Feedback Capacitor Requirements" to "Feed-forward Capacitor Requirements" in Feed-Forward Capacitor Requirements sectionGo
- Changed CNR value notation from 0.01 µF to 10 nF in Output Noise sectionGo
Changes from J Revision (May, 2011) to K Revision
- Added last sentence to first paragraph of Startup and Noise Reduction Capacitor sectionGo
Changes from I Revision (April, 2011) to J Revision
- Replaced the Dissipation Ratings with Thermal InformationGo
- Revised conditions for Typical Characteristics to include statement about TPS73525 device availabilityGo
- Added Estimating Junction Temperature sectionGo
- Updated Power Dissipation sectionGo
Changes from H Revision (November, 2009) to I Revision
- Corrected typo in Electrical Characteristics table for VOUT specification, DRV package test conditions, VOUT ≤ 2.2VGo
Changes from G Revision (March 2009) to H Revision
- 「特長」箇条書きの項目を変更し、280mVの非常に低いドロップアウトについて記載Go
- Changed dropout voltage typical specification from 250mV to 280mVGo