JAJSCJ6C September 2016 – October 2024 UCC28950-Q1 , UCC28951-Q1
PRODUCTION DATA
In this design to meet efficiency and voltage requirements 20A, 650V, CoolMOS FETs from Infineon are chosen for QA..QD.
The FET drain to source on resistance is:
The FET Specified COSS is:
The voltage across drain-to-source (VdsQA) where COSS was measured as a data sheet parameter:
Calculate average Coss [2] using Equation 49:
The QA FET gate charge is:
The voltage applied to FET gate to activate FET is:
Calculate QA losses (PQA) based on Rds(on)QA and gate charge (QAg) using Equation 52:
Recalculate the power budget using Equation 53: