JAJSCJ6C September   2016  – October 2024 UCC28950-Q1 , UCC28951-Q1

PRODUCTION DATA  

  1.   1
  2. 特長
  3. アプリケーション
  4. 概要
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
    7. 5.7 Dissipation Ratings
    8. 5.8 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Start-Up Protection Logic
      2. 6.3.2  Voltage Reference (VREF)
      3. 6.3.3  Error Amplifier (EA+, EA–, COMP)
      4. 6.3.4  Soft-Start and Enable (SS/EN)
      5. 6.3.5  Light-Load Power Saving Features
      6. 6.3.6  Adaptive Delay, (Delay Between OUTA and OUTB, OUTC and OUTD (DELAB, DELCD, ADEL))
      7. 6.3.7  Adaptive Delay (Delay Between OUTA and OUTF, OUTB and OUTE (DELEF, ADELEF)
      8. 6.3.8  Minimum Pulse (TMIN)
      9. 6.3.9  Burst Mode
      10. 6.3.10 Switching Frequency Setting
      11. 6.3.11 Slope Compensation (RSUM)
      12. 6.3.12 Dynamic SR ON/OFF Control (DCM Mode)
      13. 6.3.13 Current Sensing (CS)
      14. 6.3.14 Cycle-by-Cycle Current Limit Current Protection and Hiccup Mode
      15. 6.3.15 Synchronization (SYNC)
      16. 6.3.16 Outputs (OUTA, OUTB, OUTC, OUTD, OUTE, OUTF)
      17. 6.3.17 Supply Voltage (VDD)
      18. 6.3.18 Ground (GND)
    4. 6.4 Device Functional Modes
  8. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1  Power Loss Budget
        2. 7.2.2.2  Preliminary Transformer Calculations (T1)
        3. 7.2.2.3  QA, QB, QC, QD FET Selection
        4. 7.2.2.4  Selecting LS
        5. 7.2.2.5  Selecting Diodes DB and DC
        6. 7.2.2.6  Output Inductor Selection (LOUT)
        7. 7.2.2.7  Output Capacitance (COUT)
        8. 7.2.2.8  Select FETs QE and QF
        9. 7.2.2.9  Input Capacitance (CIN)
        10. 7.2.2.10 Current Sense Network (CT, RCS, R7, DA)
          1. 7.2.2.10.1 Voltage Loop Compensation Recommendation
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Community Resources
    5. 8.5 Trademarks
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

QA, QB, QC, QD FET Selection

In this design to meet efficiency and voltage requirements 20A, 650V, CoolMOS FETs from Infineon are chosen for QA..QD.

The FET drain to source on resistance is:

Equation 46. UCC28950-Q1 UCC28951-Q1

The FET Specified COSS is:

Equation 47. UCC28950-Q1 UCC28951-Q1

The voltage across drain-to-source (VdsQA) where COSS was measured as a data sheet parameter:

Equation 48. UCC28950-Q1 UCC28951-Q1

Calculate average Coss [2] using Equation 49:

Equation 49. UCC28950-Q1 UCC28951-Q1

The QA FET gate charge is:

Equation 50. UCC28950-Q1 UCC28951-Q1

The voltage applied to FET gate to activate FET is:

Equation 51. UCC28950-Q1 UCC28951-Q1

Calculate QA losses (PQA) based on Rds(on)QA and gate charge (QAg) using Equation 52:

Equation 52. UCC28950-Q1 UCC28951-Q1

Recalculate the power budget using Equation 53:

Equation 53. UCC28950-Q1 UCC28951-Q1