JAJSHT1G December   2009  – November 2022 UCC28C40-Q1 , UCC28C41-Q1 , UCC28C42-Q1 , UCC28C43-Q1 , UCC28C44-Q1 , UCC28C45-Q1

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Detailed Pin Description
        1. 8.3.1.1 COMP
        2. 8.3.1.2 FB
        3. 8.3.1.3 CS
        4. 8.3.1.4 RT/CT
        5. 8.3.1.5 GND
        6. 8.3.1.6 OUT
        7. 8.3.1.7 VDD
        8. 8.3.1.8 VREF
      2. 8.3.2  Undervoltage Lockout
      3. 8.3.3  ±1% Internal Reference Voltage
      4. 8.3.4  Current Sense and Overcurrent Limit
      5. 8.3.5  Reduced-Discharge Current Variation
      6. 8.3.6  Oscillator Synchronization
      7. 8.3.7  Soft Start
      8. 8.3.8  Enable and Disable
      9. 8.3.9  Slope Compensation
      10. 8.3.10 Voltage Mode
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 UVLO Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Custom Design With WEBENCH® Tools
        2. 9.2.2.2  Input Bulk Capacitor and Minimum Bulk Voltage
        3. 9.2.2.3  Transformer Turns Ratio and Maximum Duty CycleG
        4. 9.2.2.4  Transformer Inductance and Peak Currents
        5. 9.2.2.5  Output Capacitor
        6. 9.2.2.6  Current Sensing Network
        7. 9.2.2.7  Gate Drive Resistor
        8. 9.2.2.8  VREF Capacitor
        9. 9.2.2.9  RT/CT
        10. 9.2.2.10 Start-Up Circuit
        11. 9.2.2.11 Voltage Feedback Compensation
          1. 9.2.2.11.1 Power Stage Poles and Zeroes
          2. 9.2.2.11.2 Slope Compensation
          3. 9.2.2.11.3 Open-Loop Gain
          4. 9.2.2.11.4 Compensation Loop
      3. 9.2.3 Application Curves
      4. 9.2.4 Power Supply Recommendations
      5. 9.2.5 Layout
        1. 9.2.5.1 Layout Guidelines
          1. 9.2.5.1.1 Precautions
          2. 9.2.5.1.2 Feedback Traces
          3. 9.2.5.1.3 Bypass Capacitors
          4. 9.2.5.1.4 Compensation Components
          5. 9.2.5.1.5 Traces and Ground Planes
        2. 9.2.5.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
        1. 10.1.1.1 Custom Design With WEBENCH® Tools
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Related Links
    4. 10.4 サポート・リソース
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.2 ESD Ratings

VALUEUNIT
V(ESD)Electrostatic dischargeHuman-body model (HBM), per AEC Q100-002(1)±2000V
Charged-device model (CDM), per AEC Q100-011 Section 7.2±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.