SBOA603 June   2024 INA700 , INA740A , INA740B , INA745A , INA745B , INA780A , INA780B

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2Design Size
  6. 3Performance and Functionality
    1. 3.1 Total Error Comparison for Current ≤ 15A Over Temperature
    2. 3.2 Total Error Comparison for Current ≤ 25A Over Temperature
      1. 3.2.1 Common Mode Voltage ≤ 40V
      2. 3.2.2 Common Mode Voltage ≤ 80V
    3. 3.3 Total Error Comparison for Current ≤ 50A Over Temperature
  7. 4Summary
  8. 5References

Common Mode Voltage ≤ 40V

 INA745A vs INA236 + Resistor DFigure 3-4 INA745A vs INA236 + Resistor D

At higher ambient temperatures such as 125°C , Our INA745A can provide a more accurate design from 0.7A to 25A in comparison to the Discrete design due to the total Drift imposed by both the Digital power monitor and Resistor variant. While the discrete design can remain more accurate from 0A to approximately 0.7A. This behavior can be attributed to the active calibration our EZShunt devices perform in conjunction with lower overall system drift when compared to INA236 + resistor D.

However, at 25°C , our data shows the overall accuracy of the EZShunt™ design is less than the discrete design due to the total error subjugated upon the system being slightly greater for the INA745A against the INA236 & Resistor D variant.

 INA745A vs INA236 + Resistor EFigure 3-5 INA745A vs INA236 + Resistor E

The previous data set helps us understand a few differences when using Resistor E in the design. Here, we see from approximately 0.3A to 25A, at both 25°C & 125°C, the INA745A can provide a more accurate design in comparison to the discrete design. Meanwhile, from 0A to approximately 0.3A, at both 25°C & 125°C, the Discrete design can be slightly more accurate. The higher performance on the discrete design at lower current levels can be attributed to the lower voltage offset drift, and error present.

 INA745A vs INA236 + Resistor FFigure 3-6 INA745A vs INA236 + Resistor F

When comparing the data sets attributed to performance at 25°C, we are able to see the total error formed by our discrete design is less than our EZShunt™ design. This helps us understand the more expensive Resistor E combined with our INA236 can be more accurate at lower temperatures. While at 125°C, Our INA745A provides a design with less total error and higher accuracy from 0.7A – 25A against the discrete design while the discrete design performs slightly better from 0 – 0.7A.