Figure 3-7 INA740A vs INA238 + Resistor D

At 125°C, INA740A provides a much more accurate design with less total error from 0.7A to 35A against the discrete design. Meanwhile, the Discrete design conveys less total error from 0A to 0.7A at higher temperatures. On the contrary, at 25°C the discrete design is more accurate across current from 0A – 15A in comparison to the EZShunt™ method. This performance at higher temperatures can be attested to the total drift and tolerance percent provided by the Digital power monitor and Shunt resistor outweighing the error from our INA740A.

Figure 3-8 INA740A vs INA238 + Resistor E

When using Resistor E which provides a measured tolerance error of 0.99% and drift of 118.2ppm, at 25°C, the EZShunt™ design has improved accuracy over the discrete implementation from approximately 0.4A to 35A despite the INA238 + Resistor E being slightly better from the 0 - 0.4A range.

Meanwhile, at 125°C, we see a similar situation where the Discrete design has slightly improved accuracy from 0 to 0.4A while the INA740A is able to provide roughly 50% less Error than the discrete design from 0.4A to 25A.

Figure 3-9 INA740A vs INA238 + Resistor F

For the design set using Resistor F, At 25°C, The Discrete design can provide higher accuracy Throughout current ranges between 0A – 25A against the INA740A.

At 125°C, the accuracy follows our previous designs where the INA740A offers slightly less accuracy than the INA238 + Resistor F from 0A to approximately 0.9A. Meanwhile, the INA740A helps perform better which higher accuracy from 0.9A to 35A.