SPRUI78D March 2019 – January 2022 TMS320F28075 , TMS320F28075-Q1 , TMS320F28076 , TMS320F28374D , TMS320F28374S , TMS320F28375D , TMS320F28375S , TMS320F28375S-Q1 , TMS320F28376D , TMS320F28376S , TMS320F28377D , TMS320F28377D-Q1 , TMS320F28377S , TMS320F28377S-Q1 , TMS320F28378D , TMS320F28378S , TMS320F28379D , TMS320F28379D-Q1 , TMS320F28379S
TI’s enhanced safety development process is a merger of TI’s standard HW development process and Yogitech fRMethodology flow for functional safety compliant development. The goal of the process development is to take the best aspects of each flow and collaborate, resulting in the best in class capabilities to reduce systematic faults. The process flow targets compliance to IEC 61508 and ISO 26262, and is continuously improved to incorporate new features of emerging functional safety standards. These functional safety standards are specifically targeted because TI believes they best represent the state of the art in functional safety development for semiconductors. While not directly targeted at other functional safety standards, it is expected that products developed to an industry state-of-the-art can be readily utilized in other functional safety systems. This enhanced development process has been assessed and certified by TUEV SUED for compliance to IEC 61508 and ISO 26262 The development process applied to the C2000 silicon covered by this document incorporates all changes through IEC 61508-2:2010 (second edition) and the ISO 26262-5:2011 international standard release.