SLLA472A March   2020  – February 2022 ISO5852S , ISO5852S-EP , ISO5852S-Q1 , LM5106

 

  1.   Trademarks
  2. 1Introduction
  3. 2Current Boost With BJT Totem Pole Stage
  4. 3Current Boost With Saturated MOSFET Totem Pole Stage
  5. 4Implementation Details
  6. 5Performance Results
  7. 6Comparison of the Two Methods
  8. 7Conclusion
  9. 8References
  10. 9Revision History

7 Conclusion

Boards were designed and made for BJT-based and MOSFET-based current-boosted gate drivers and their comparative performance was evaluated. The MOSFET based saturated drive was found to be able to give more drive current and was relatively cooler while driving similar loads. The BJT drive was simpler with the ability to extend the protection features offered by the gate driver IC used. The BJT drive also provides a much higher level of integration.